Datasheet FDME1023PZT Datasheet (Fairchild)

FDME1023PZT

G2

S1

G1

D2

S2

D1

MicroFET 1.6x1.6 Thin

D1

D2

TOP

BOTTOM

Pin 1

S2

G2

D1

D2

G1

S1

1

3

2

6

5

4

Dual P-Channel PowerTrench® MOSFET

-20 V, -2.6 A, 142 mΩ

Features

 Max r
 Max r
 Max r
 Max r
 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides
 HBM ESD protection level > 1600 V (Note 3)
 RoHS Compliant

= 142 mΩ at VGS = -4.5 V, ID = -2.3 A

DS(on)

= 213 mΩ at VGS = -2.5 V, ID = -1.8 A

DS(on)

= 331 mΩ at VGS = -1.8 V, ID = -1.5 A

DS(on)

= 530 mΩ at VGS = -1.5 V, ID = -1.2 A

DS(on)

General Description

This device is designed specifically as a single package solution
for the battery charges switch in cellular handset and other
ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.

Applications

 Load Switch
 Battery Charging
 Battery Disconnect Switch

FDME1023PZT Dual P-Channel PowerTrench

July 2010

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Thermal Characteristics

R

θJA

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1

Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
Drain Current -Continuous TA = 25 °C (Note 1a) -2.6

-Pulsed -6
Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4
Power Dissipation for Single Operation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90
Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195

2T FDME1023PZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.6

A

1

A

W

°C/W

www.fairchildsemi.com

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V

I

= -250 μA, referenced to 25 °C -12 mV/°C

D

= 0 V -1 μA

GS

= 0 V ±10 μA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.4 -0.6 -1.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

I

= -250 μA, referenced to 25 °C 2 mV/°C

D

V

= -4.5 V, ID = -2.3 A 95 142

GS

= -2.5 V, ID = -1.8 A 120 213

V

GS

= -1.8 V, ID = -1.5 A 150 331

V

GS

= -1.5 V, ID = -1.2 A 190 530

V

GS

= -4.5 V, ID = -2.3 A,

V

GS

T

= 125 °C

J

128 190

Forward Transconductance VDS = -4.5 V, ID = -2.3 A 7 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 55 75 pF
Reverse Transfer Capacitance 50 75 pF

= -10 V, VGS = 0 V,

V

DS

f = 1 MHz

305 405 pF

FDME1023PZT Dual P-Channel PowerTrench

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Rise Time 4.8 10 ns
Turn-Off Delay Time 33 53 ns
Fall Time 16 29 ns
Total Gate Charge
Gate to Source Gate Charge 0.6 nC
Gate to Drain “Miller” Charge 1.4 nC

VDD = -10 V, ID = -1 A,
V

= -4.5 V, R

GS

= -10 V, ID = -2.3 A,

V

DD

V

= -4.5 V

GS

GEN

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boa rd of FR-4 materi al. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 4.4 10 nC

a. 90 °C/W when mounted on
a 1 in2 pad of 2 oz copper.

= 0 V, IS = -0.9 A (Note 2) -0.8 -1.2 V

GS

= -2.3 A, di/dt = 100 A/μs

I

F

= 6 Ω

4.7 10 ns

5.5 7.7 nC

16 29 ns

is guaranteed by design while R

θJC

b. 195 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

©2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1

2

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FDME1023PZT Dual P-Channel PowerTrench

00.51.01.52.0

0

2

4

6

VGS = -3 V

VGS = -2.5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = - 1.8 V

VGS = -1.5 V

VGS = -4.5 V

-I

D

, DRAIN CURRENT (A)

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0246

0

1

2

3

VGS = -1.8 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-I

D

, DRAIN CURRENT (A)

V

GS

= -4.5 V

VGS = -2.5 V

VGS = -1.5 V

V

GS

= -3 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = -2.3 A
V

GS

= -4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

1.01.52.02.53.03.54.04.5

0

100

200

300

400

500

ID = -2.3 A

TJ = 25 oC

TJ = 125 oC

-V

GS

, GATE TO SOURCE VOLTA GE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0.0 0.5 1.0 1.5 2.0

0

2

4

6

V

DS

= -5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

-I

D

, DRAIN CURRENT (A)

-VGS, GATE TO SOURC E V O LTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

-I

S

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Fi g ure 3 . Norm a lize d On Re s ista n ce

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

On-Resista nce vs Gate to

Source Voltage

Figure 6.

Source to Dr ai n Diode

Forward Voltage vs Source Current

3

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FDME1023PZT Dual P-Channel PowerTrench

0246

0.0

1.5

3.0

4.5

ID = -2.3 A

VDD = -10 V

V

DD

= -8 V

-V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -12 V

0.1 1 10 20

10

100

1000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.1 1 10 60

0.01

0.1

1

10

100 us

DC

10 s

1 s

100 ms

10 ms

1 ms

-I

D

, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 195

o

C/W

T

A

= 25

o

C

0 3 6 9 12 15

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

V

DS

= 0 V

TJ = 25 oC

TJ = 125 oC

-V

GS

,

GATE TO SOURCE VOLTA G E (V)

-I

g

,

GATE LEAKAGE CURRENT (A)

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.3

1

10

100

1000

P

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE
R

θJA

= 195 oC/W

T

A

= 25 oC

t, PULSE WIDTH (s)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Forward Bia s Safe

Operating Area

©2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1

Figure 11. Single Pulse Maximu

Figure 10. Gate Leakage

Current vs

Gate to Source Voltage

m Power Dissipation

4

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FDME1023PZT Dual P-Channel PowerTrench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

SINGLE PULSE
R

θJA

= 195 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (s)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1

5

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDME1023PZT Dual P-Channel PowerTrench

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1

6

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FDME1023PZT Dual P-Channel PowerTrench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1

Datasheet contains the design specificatio ns for product development. Sp ecifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fai r child
Semiconductor. The datashe et is for reference information only.

Rev. I48

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