Page 1
FDMC8882
N-Channel Power Trench®MOSFET
30 V, 16 A, 14.3 m:
Features
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
= 14.3 m: at VGS = 10 V, ID = 10.5 A
DS(on)
= 22.5 m: at VGS = 4.5 V, ID = 8.3 A
DS(on)
DS(on)
September 2010
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
®
process that has
FDMC8882 N-Channel Power Trench
®
MOSFET
Top
Pin 1
S
Bottom
G
S
S
D
D
D
D
5
D
D
6
D
7
8
D
MLP 3.3x3.3
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25 °C 16
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 40
Power Dissipation TC = 25 °C 18
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 34
C
= 25 °C (Note 1a) 10.5
A
= 25 °C (Note 1a) 2.3
A
Thermal Characteristics
G
4
S
3
S
2
S
1
A
W
R
TJC
R
TJA
Thermal Resistance, Junction to Case 6.6
Thermal Resistance, Junction to Ambient (Note 1a) 53
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8882 FDMC8882 MLP 3.3x3.3 13 ’’ 12 mm 3000 units
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
°C/W
1
www.fairchildsemi.com
Page 2
FDMC8882 N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
= 250 PA, referenced to 25 °
I
D
V
= 24 V, VGS= 0 V 1
DS
T
C 25 mV/°C
= 125 °C 250
J
Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V ±100 nA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward T
ransconductance V
I
= 250 PA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 10.5 A 12.4 14.3
GS
= 4.5 V, ID = 8.3 A 16.0 22.5
V
GS
= 10 V, ID = 10.5 A
V
GS
T
= 125 °C
J
= 5 V
DD
= 10.5 A 3
, I
D
17.4
3S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Cap
acitance 140 185 pF
Reverse Transfer Capacitance 90 135 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance
710 945 pF
1.0
PA
m:
:
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 17 30 ns
V
= 15 V, ID = 10.5 A,
DD
= 10 V, R
V
GS
GEN
Fall Time 210ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
= 0 V to 4.5 V 7 10 nC
GS
Total Gate Charge 2.3 nC
Gate to Drain “Miller” Charge 2.8 nC
Drain-Source Diode Characteristics
V
= 0 V, IS= 10.5 A (Note 2) 0.88 1.2
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 4.4 10 nC
a. 53 °C/W when mounted on
2
a 1 in
pad of 2 oz cop per
GS
= 0 V, IS= 1.9 A (Note 2) 0.76 1.2
V
GS
= 10.5 A, di/dt = 100 A/Ps
I
F
= 6 :
V
DD
= 10.5 A
I
D
= 15 V
is guaranteed by design while R
TJC
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
714ns
14 20 nC
V
16 28 ns
is determined by
TCA
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
2
www.fairchildsemi.com
Page 3
FDMC8882 N-Channel Power Trench
Typical Characteristics T
40
VGS = 10 V
VGS = 6 V
30
VGS = 4.5 V
VGS = 4 V
20
DRAIN CURRENT (A)
10
,
D
I
0
01234
,
V
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
1.6
1.4
On-Region Characteristics Figure 2.
ID = 10.5 A
= 10 V
V
GS
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TEMPERATURE
J
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
= 25 °C unless otherwise noted
J
VGS = 3.5 V
VGS = 3 V
o
C
(
)
4.0
VGS = 3 V
3.5
3.0
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
2.5
2.0
NORMALIZED
1.5
VGS = 4 V
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 10203040
VGS = 6 V
DRAIN CURRENT (A)
,
I
D
VGS = 4.5 V
VGS = 10 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
50
)
:
m
40
(
ID= 10.5 A
30
DRAIN TO
,
20
DS(on)
r
10
SOURCE ON-RESISTANCE
0
246810
V
,
GATE TO SOURCE VOLTAGE (V)
GS
Figure 4.
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
TJ= 125 oC
TJ= 25 oC
Source Voltage
®
MOSFET
40
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
30
V
= 5 V
DS
20
TJ = 150 oC
10
, DRAIN CURRENT (A)
D
I
0
12345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
TJ = 25 oC
TJ = -55 oC
60
V
= 0 V
GS
10
1
TJ= 150 oC
TJ = 25 oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55 oC
Forward Voltage vs Source Current
3
www.fairchildsemi.com
Page 4
FDMC8882 N-Channel Power Trench
Typical Characteristics T
10
ID= 10.5 A
V
DD
VDD = 15 V
= 10 V
8
6
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
03691215
Figure 7.
Qg, GATE CHARGE (nC)
Gate Charge Characteristics Figure 8.
20
10
TJ= 125 oC
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 30
tAV, TIME IN AVALANCHE (ms)
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
= 25 °C unless otherwise noted
J
VDD = 20 V
TJ= 25 oC
TJ= 100 oC
1000
C
C
CAPACITANCE (pF)
100
f = 1 MHz
V
= 0 V
GS
50
0.1 1 10 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
C a p a c i t a n c e v s D r a i n
to Source Voltage
40
30
20
DRAIN CURRENT (A)
Limited by Package
,
10
D
I
0
25 50 75 100 125 150
T
CASE TEMPERATURE
,
c
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
VGS= 6 V
R
= 6.6 oC/W
JC
T
o
(
C
)
C u r r e n t v s C a s e T e m p e r a t u re
iss
oss
rss
®
MOSFET
VGS= 10 V
50
10
1
THIS AREA IS
LIMITED BY r
SINGLE PULSE
0.1
, DRAIN CURRENT (A)
D
I
0.01
T
= MAX RATED
J
R
T
JA
T
A
0.01 0.1 1 10 100
Figure 11.
DS(on)
= 125 oC/W
= 25 oC
VDS, DRAIN to SOURCE VOLTAGE (V)
Forw ard Bia s Sa fe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
100 Ps
1 ms
10 ms
100 ms
1 s
10 s
DC
1000
VGS = 10 V
100
10
SINGLE PULSE
PEAK TRANSIENT POWER (W)
,
)
R
= 125 oC/W
T
PK
(
P
JA
1
T
= 25 oC
A
0.5
10-410-310-210
Figure 12.
S i n g l e P u l s e M a x i m u m
-1
t, PULSE WIDTH (sec)
110
100 1000
Power Dissipation
4
www.fairchildsemi.com
Page 5
FDMC8882 N-Channel Power Trench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
R
= 125 oC/W
TJA
-4
10
-3
10
TJA
IMPEDANCE, Z
0.01
NORMALIZED THERMAL
0.001
= 25 °C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-2
10
t, RECTANGULAR PULSE DURATION (sec )
-1
10
110
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
2
x R
+ T
TJA
TJA
A
100 1000
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
5
www.fairchildsemi.com
Page 6
Dimensional Outline and Pad Layout
FDMC8882 N-Channel Power Trench
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
6
www.fairchildsemi.com
Page 7
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
®
®
EfficientMax™
ESBC™
®
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
FlashWriter
®
*
FPS™
®
F-PFS™
®
FRFET
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptoHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP SPM™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
™
®
®
*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
FDMC8882 N-Channel Power Trench
®
®
MOSFET
DISCLAIMER
FAIRCHILD SEMI CONDUCTOR RESERVES THE RIGH T TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREI N TO IM PROVE
RELIABILITY, FUNCTION, OR DESI GN. FAI RCHILD DO ES NOT ASSUME ANY LI ABILI TY ARISI NG OUT OF THE APPLI CATION OR USE O F ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEI THER DOES IT CONVEY ANY LICENSE UNDER I TS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EX PAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CONDITIONS, SPECIF ICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRI TICAL COM PONENTS IN L IFE SUPPORT DEVI CES OR SYSTEM S WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEM I CONDUCTOR CORPORATI ON.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any w arranty issues that may arise. Fairchild w ill not pro vide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
7
www.fairchildsemi.com
Rev. I48
Loading...