Page 1
FDMC8878
N-Channel Power Trench
30V, 16.5A, 14m:
Features
Max r
Max r
Low Pr
RoHS Compliant
on)
DS(
DS(
on)
ofile - 0.8
= 14m:
= 17
at V
GS
m: at V
GS
mm max in
, I
= 10V
D
, I
= 4.5V
D
MLP 3.3X3.3
= 9.6A
= 8.7A
®
MOSFET
General Description
This
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
N-Channel MOSFET is a rugged gate version of
FDMC8878 N-Channel Power Trench
December 2010
Top
Pin 1
S
MLP 3.3x3
MOSFET Maximum Ratings T
Symbol Parame
Dr
V
DS
V
GS
I
D
P
D
, T
T
G
J
ST
ain to Source Voltage 30 V
Gate to Source
ain Current -Continuous (Package limited) T
Dr
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 60
Power Dissip
Power Dissipation T
Opera
ting and Storage Junction Temperature Range -55 to +150 °C
Voltage ±20 V
ation T
.3
= 25°C unless otherwise noted
A
Thermal Characteristics
Application
®
DC -
DC Conversion
ttom
Bo
D
G
S
S
D
D
D
D
ter Ratings Units
C 16.5
= 25°
C
= 25°C 38
C
=
25°C (Note 1a) 9.6
A
= 25°C 3
C
= 25°C (Note 1a) 2.1
A
5
D
6
D
7
D
8
1
G
4
S
3
2
S
S
1
A
W
MOSFET
R
TJC
R
TJA
kage Marking and Ordering Information
Pac
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8878 FDMC8878
©2
010 Fairchild Semiconductor Corporation
FDMC8878 Rev.D3
Thermal Resistance, Junction to Case 4
T
hermal Resistance, Junction to Ambient (Note 1a) 60
MLP 3.3X3.3
1
13 ”
°C/W
12 mm 3000 unit
www.fairchildsemi.com
s
Page 2
unless otherwise noted
Electrical Characteristics T
Symbol Parameter Test Conditions Min Typ Max Units
Of
f Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Dr
ain to Source Breakdown Voltage I
Breakdown
Voltage Temperature
Coefficient
Zer
o Gate Voltage Drain Current
Gate to Sour
ce Leakage Current V
= 25°C
J
= 250PA,
D
= 250PA
I
D
=
V
24V, 1
DS
= 0V TJ =
V
GS
±20V, V
=
GS
=
V
0V 30 V
GS
, referenced to 25°C 20 mV/°C
125°C 100
= 0V ±100 nA
DS
FDMC8878 N-Channel Power Trench
PA
On Cha
V
'V
r
DS(on)
g
Dyn
C
C
C
R
Swit
t
d(on)
t
r
t
d(o
t
f
Q
Q
Q
racteristics
GS(
'T
FS
th)
GS(
J
Gate to Sour
Gate to Sour
th)
Temperature Coefficient
Drain to Source On Resistance
Forwar
amic Characteristics
iss
s
os
s
rs
g
Input C
Output Cap
Reverse T
Gate Resistance f = 1MHz 1.1 :
ching Characteristics
urn-On Delay Time
T
Rise T
T
urn-Off Delay Time 20 36 ns
all Time 310ns
F
otal Gate Charge
T
Gate to Source Gate C
Gate to Dr
g(
gs
gd
ff)
TOT)
ce Threshold Voltage V
ce Threshold Voltage
d Transconductance V
apacitance
acitance 183 255 pF
ransfer Capacitance 118 180 pF
ime 410ns
harge 2.8 nC
ain “Miller” Charge 3.9 nC
= VDS, ID = 250PA 1 1.7 3 V
GS
0PA, referenced to 25°C -5.7 mV/°C
= 25
I
D
V
GS
GS
V
GS
DS
V
DS
f = 1MHz
V
DD
V
GS
V
GS
I
D
, I
= 10V
= 9.6A 9.6 14.0
D
= 4.5V, ID = 8.7A 12.1 17.0
= 10V
= 5V
=
, I
9.6A , T
D
= 9.6A 35 S
, I
D
= 15V, VGS = 0V,
15V, I
=
= 10V, R
D
= 9.
GEN
= 10V , VDD = 15V ,
= 9.6A
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
Source to D
Rever
Reverse Recovery Char
rain Diode Forward Voltage V
se Recovery Time
ge 14 21 nC
a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper
= 0V, IS =
GS
= 9.6A, di/dt = 100A/Ps
I
F
9.6A (Note 2) 0.8 1.2 V
= 125°C 13.5 20.0
J
1000 1
6A
816ns
= 6:
18 26 nC
23 35 ns
is guaranteed by design while R
TJC
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
m:V
230 pF
is determined by
TCA
®
MOSFET
2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
©2010
Fairchild Semiconductor Corporation
FDMC8878 Rev.
D3
2
www.fairchildsemi.com
Page 3
P
:
P
FDMC8878 N-Channel Power Trench
Typical Characteristics T
60
VGS = 10
50
40
30
20
DRAIN CURRENT (A)
,
D
I
10
0
0
Fi
gure 1.
1234
VDS,
DRAIN TO SOURCE VOLTAGE (V)
On-Reg
1.6
ID =
9.6A
V
10V
=
GS
1.4
1.2
1.0
NORMALIZED
0.8
0.6
5 -50 -25 0 25 50 75 100 125 150
-7
DRAIN TO SOURCE ON-RESISTANCE
TJ,
JUNCTION TEMPERATURE
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
Junction Temperature
vs
V
5V
VGS = 4.
V
VGS = 4
PU
DU
ion Characteristics Figure 2.
= 25°C u
J
LSE DURATION = 80
TY CYCLE = 0.5%MAX
nless otherwise noted
.5V
VGS = 3
VGS =
3V
o
C)
(
2.5
PULSE DURATION = 80Ps
DUT
Y CYCLE = 0.5%MAX
2.0
VGS = 3
V
VGS =
0V
DRAIN CURRENT(A)
s
RMALIZED
NO
1.5
1.0
VGS = 1
0.5
DRAIN TO SOURCE ON-RESISTANCE
10 20 30 40 50 60
0
ID,
N
o r m a l i z e d O n - R e s i s t a n c e
VGS = 4.5V
3.5V
vs Drain Current and Gate Voltage
VGS = 4
V
®
MOSFET
AIN TO
, DR
n)
DS(o
r
)
(m
SOURCE ON-RESISTANCE
30
ID = 9.
25
20
15
10
5
34
VGS,
Figure 4.
6A
5678910
GATE TO SOURCE VOLTAGE (V)
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ = 125oC
o
= 25
T
C
J
Source Voltage
60
SE DURATION = 80
PUL
DU
TY CYCLE = 0.5%MAX
50
VDD = 5
V
40
30
20
DRAIN CURRENT (A)
,
10
D
I
0
01234
VGS,
Figure 5. Transfer Characteristics
©2010
Fairchild Semiconductor Corporation
FDMC8878 Rev.
D3
s
o
TJ =
C
25
o
TJ = 1
C
50
GATE TO SOURCE VOLTAGE (V)
TJ =
-55
100
V
V
= 0
GS
10
1
0.1
o
C
0.01
REVERSE DRAIN CURRENT (A)
,
S
I
0.001
TJ = 150oC
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD,
BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -
TJ = 25oC
o
55
C
Forward Voltage vs Source Current
3
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Page 4
T
FDMC8878 N-Channel Power Trench
Typical Characteristics T
10
.6A
ID = 9
8
6
4
2
GATE TO SOURCE VOLTAGE(V)
,
0
GS
05
V
Qg, G
Fi
gure 7.
Gate Ch
20
10
ANCHE CURRENT(A)
, AVAL
AS
I
1
0
.01 0.1 1 10
tAV, T
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
80
10
1
PERATION IN THIS
O
0.1
AIN CURRENT (A)
AREA MAY BE
LIMITED BY r
, DR
D
I
0.01
01
0.0
0.1 1 10
DS(on)
VDS,
DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
V
DD
VDD = 10V
10 15 20
ATE CHARGE(nC)
arge Characteristics Figure 8.
o
25
TJ = 1
C
IME IN AVALANCHE(ms)
NGLE PULSE
SI
T
= MA
J
T
= 25oC
A
= 25°C u
J
15V
=
VDD =
TJ = 2
X RATED
nless otherwise noted
20V
o
5
C
80
us
100
s
1m
s
10m
100
ms
1s
10s
DC
000
3
C
iss
1000
C
oss
PACITANCE (pF)
CA
100
1MHz
f =
V
V
= 0
GS
50
11 10
0.
VDS, D
RAIN TO SOURCE VOLTAGE (V)
C
a p a c i t a n c e v s D r a i n
to Source Voltage
12
10
8
6
4
DRAIN CURRENT (A)
,
D
I
2
R
= 6
JA
0
25 50 75 100 125 150
Figure 10.
V
GS
o
C/
0
W
AMBIENT TEMPERATURE
TA,
M a x i m u m C o n t i n u o u s D r a i n
=
4.5V
C
rss
30
®
MOSFET
V
= 1
0V
GS
o
C)
(
Current vs Ambient Temperature
300
10
0
80
10
PEAK TRANSIENT POWER (W)
),
PK
0.
P(
1
5
10-310
Figure 12.
VGS = 10V
NGLE PULSE
SI
-2
10
t
, PULSE WIDTH (s)
S i n g l e P u l s e M a x i m u m
TA = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
-1
0
10
o
C DERATE PEAK
150 TA–
-----------------------
25
1
10
125
10210
3
Power Dissipation
©2010
Fairchild Semiconductor Corporation
FDMC8878 Rev.
D3
4
www.fairchildsemi.com
Page 5
T
FDMC8878 N-Channel Power Trench
Typical Characteristics T
JA
ALIZED THERMAL
IMPEDANCE, Z
NORM
0.0
0.
2
1
0.1
1
003
10
Y CYCLE-DESCENDING ORDER
DUT
0.5
D =
0.2
0.1
0.05
0.02
0.01
NGLE PULSE
SI
-3
10
-2
= 25°C u
J
nless otherwise noted
-1
10
t
, RECTANGULAR PULSE DURATION (s)
0
10
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
1
10
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
2
x R
+ T
TJA
TJA
A
2
10
3
10
®
MOSFET
©2010
Fairchild Semiconductor Corporation
FDMC8878 Rev.
D3
5
www.fairchildsemi.com
Page 6
Dimensional Outline and Pad Layout
FDMC8878 N-Channel Power Trench
®
MOSFET
©2010
Fairchild Semiconductor Corporation
FDMC8878 Rev.
D3
6
www.fairchildsemi.com
Page 7
m
®
t
tm
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
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CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
®
®
ESBC™
t
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
FlashWriter
®
*
FPS™
®
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
Power-SPM™
®
®
m
®
PowerTrench
PowerXS™
SM
Programmable Active Droop™
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QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
®
®
™
®
®
®
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TRUECURRENT™*
PSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
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®
®
®
®
FDMC8878 N-Channel Power Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2010
Fairchild Semiconductor Corporation
FDMC8878 Rev.
D3
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
7
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Rev. I51
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