Datasheet FDMC7680 Datasheet (Fairchild)

FDMC7680

Bottom

D

D

D

D

S

S

S

G

Top

Pin 1

MLP 3.3x3.3

G

S

S

S

D
D

D

D

5
6

7

8

3

2

1

4

N-Channel Power Trench® MOSFET

30 V, 14.8 A, 7.2 mΩ

Features

 Max r
 Max r
 High performance technology for extremely low r
 Termination is Lead-free and RoHS Compliant

= 7.2 mΩ at VGS = 10 V, ID = 14.8 A

DS(on)

= 9.5 mΩ at VGS = 4.5 V, ID = 12.4 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power
been especially tailored to minimize the on-state resistance.
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.

Application

 DC - DC Buck Converters
 Notebook battery power management
 Load switch in Notebook

FDMC7680 N-Channel Power Trench

November 2011

Trench® process that has

This

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7680 FDMC7680 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C3

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 18

-Pulsed 45
Single Pulse Avalanche Energy (Note 3) 72 mJ
Power Dissipation TC = 25 °C 31
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 4.0
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C (Note 1a) 14.8

A

= 25 °C (Note 1a) 2.3

A

1

A -Continuous T

W

°C/W

www.fairchildsemi.com

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = 20 V, V

I

= 250 μA, referenced to 25 °C 15 mV/°C

D

V

= 24 V, V

DS

= 0 V 1

GS

DS

= 125 °C 250

T

J

= 0 V 100 nA

FDMC7680 N-Channel Power Trench

μA

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.2 2.0 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5 V, ID = 14.8 A 68 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 770 1020 pF
Reverse Transfer Capacitance 75 115 pF
Gate Resistance 0.5 1.6 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 4 10 ns
Turn-Off Delay Time 25 40 ns
Fall Time 3 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 7 nC
Gate to Drain “Miller” Charge 4 nC

= 250 μA, referenced to 25 °C -6 mV/°C

I

D

V

= 10 V, ID = 14.8 A 5.8 7.2

GS

= 4.5 V, ID = 12.4 A 7.3 9.5

V

GS

= 10 V, ID = 14.8 A

V

GS

= 125 °C

T

J

= 15 V, VGS = 0 V,

V

DS

7.4 9.2

2145 2855 pF

f = 1 MHz

12 22 ns

= 15 V, ID = 14.8 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

30 42 nC

= 0 V to 4.5 V 14 19 nC

GS

= 15 V

V

DD

I

= 14.8 A

D

mΩ

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:
1: R

θJA

the user's board design.

2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3: E

AS

©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C3

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 15 24 nC

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

of 72 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.

a. 53 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

V

= 0 V, IS = 14.8 A (Note 2) 0.84 1.2

GS

= 0 V, IS = 1.9 A (Note 2) 0.73 1.2

V

GS

IF = 14.8 A, di/dt = 100 A/μs

2

θJC

b.125 °C/W when mounted on
a minimum pad of 2 oz copper

34 54 ns

is guaranteed by design while R

V

is determined by

θCA

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FDMC7680 N-Channel Power Trench

0.0 0.5 1.0 1.5 2.0

0

9

18

27

36

45

VGS = 3.5 V

VGS = 6 V

VGS = 10 V

VGS = 3 V

VGS = 4 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 9 18 27 36 45

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 4.5 V

VGS = 6 V

VGS = 4 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 10 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 14.8 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST A NC E

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

5

10

15

20

25

TJ = 125 oC

ID = 14.8 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAG E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

12345

0

9

18

27

36

45

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C3

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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FDMC7680 N-Channel Power Trench

0 4 8 121620242832

0

2

4

6

8

10

ID = 14.8 A

VDD = 15 V

V

DD

= 10 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 20 V

0.1 1 10 30

50

100

1000

3000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VO LTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10 100

1

10

20

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

10

20

30

40

50

60

Limited by Package

R

θJC

= 4.0 oC/W

V

GS

= 4.5 V

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

c

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100

0.01

0.1

1

10

60

1 ms

1 s

DC

100 ms

10 ms

100us

10 s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

200

10-410-310-210

-1

110

100 1000

0.5

1

10

100

1000

2000

VGS = 10 V

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

SINGLE PULSE
R

θJA

= 125

o

C/W

T

A

= 25

o

C

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C3

Figure 11.

Forward Bias Safe

Operating Area

Figure 10.

Max imum C o ntin u ous D r ain

Current vs Case Temperature

Figure 12.

Si ngl e Pu lse Max imum

Power Dissipation

4

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FDMC7680 N-Channel Power Trench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.0001

0.001

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

= 25 °C unless otherwise noted

J

Figure 13. Transient Thermal Response Curve

®

MOSFET

©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C3

5

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMC7680 N-Channel Power Trench

®

MOSFET

©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C3

6

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™

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FDMC7680 N-Channel Power Trench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2011 Fairchild Semiconductor Corporation
FDMC7680 Rev.C3

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I58

7

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