Page 1
tm
FDMC6890NZ
Dual N-Channel PowerTrench® MOSFET
20V, 4A, Q1:68mΩ, Q2:100mΩ
Features
Q1: N-Channel
Max r
Max r
Q2: N-Channel
Max r
Max r
Low gate Charge
RoHS Compliant
= 68mΩ at VGS = 4.5V, ID = 4A
DS(on)
= 100mΩ at VGS = 2.5V, ID = 3A
DS(on)
= 100mΩ at VGS = 4.5V, ID = 4A
DS(on)
= 150mΩ at VGS = 2.5V, ID = 2A
DS(on)
General Description
FDMC6890NZ is a compact single package solution for DC to
DC converters with excellent thermal and switching
characteristics. Inside the Power 33 package features two
N-channel MOSFETs with low on-state resistance and low gate
charge to maximize the power conversion and switching
efficiency. The Q1 switch also integrates gate protection from
unclamped voltage input.
Application
DC - DC Conversion
FDMC6890NZ Dual N-Channel PowerTrench
October 2006
®
MOSFET
Up
S1
G1 G2
D1/S2
D1/S2
Power 33
D2
MOSFET Maximum Ratings T
Symbol Parameter Q1 Q2 Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 20 20 V
Gate to Source Voltage ±12 ±12 V
-Continuous 4
-Pulsed 10
Power Dissipation (Steady State) Q1 (Note 1a) 1.92
Power Dissipation (Steady State) Q2 1.78
Operating and Storage Junction Temperature Range -55 to +150 °C
Bottom
G1
D1
D1/S2
S1
= 25°C unless otherwise noted
A
D1/S2
G2
D2
D2
D2
D1/S2
S1
G2
4
5
6
3
D1/S2
2
G1
1
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient Q1 (Note 1a) 65
Thermal Resistance, Junction to Ambient Q2 70
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
6890N FDMC6890NZ Power 33 7inch 8mm 3000 units
©2006 Fairchild Semiconductor Corporation
FDMC6890NZ Rev.C
1
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Page 2
FDMC6890NZ Dual N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Typ e Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±12V, VDS= 0V
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS = V, ID =4A
ID = 250µA, VGS = 0V Q1Q220
20
ID = 250µA, referenced to 25°C Q1
Q2
VDS = 16V, V
= 0V Q1
GS
Q2
Q1
Q2
Q1Q20.6
0.6
ID = 250µA, referenced to 25°C
VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 3A
VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 2A
Q1
Q2
Q1
Q2
Q1
Q2
V
13
12
0.9
1.0
-3
-3
58
77
67
102
10
7
mV/°C
1
1
±10
±100µAnA
2
2
mV/°C
68
100
100
150
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
V
Output Capacitance
= 10V, VGS = 0V, f= 1MHZ
DS
Reverse Transfer Capacitance
Gate Resistance f = 1MHz
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
205
190
60
60
40
35
270
250
80
80
60
55
3.3
2.8
µA
V
mΩ
S
pF
pF
pF
Ω
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(2)
Q
gs
Q
gd
FDMC6890NZ Rev.C
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 4.5V V
Total Gate Charge at 2V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 10V, ID = 4A, R
= 0V to 4.5V
GS
VDD = 10 V
ID = 4A
2
GEN
= 6Ω
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
4
4
13
12
10
7
6
6
2.4
1.8
1.4
0.6
0.4
0.5
0.9
0.8
10
10
22
21
19
14
12
12
3.4
2.6
1.9
0.8
ns
ns
ns
ns
nC
nC
nC
nC
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Page 3
FDMC6890NZ Dual N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge
a. 65°C/W when mounted on
a 1 in2 pad of 2 oz copper
= 0V, IS = 4A
GS
I
= 4A, di/dt = 100A/s
F
Q1
Q2
0.94
0.92
Q1
Q2
Q1
Q2
is guaranteed by design while R
θJC
b. 150°C/W when mounted on a
minimum pad of 2 oz copper
18
17
10
1.25
1.25
27
26
9
14
15
is determined by
θCA
V
ns
nC
®
MOSFET
FDMC6890NZ Rev.C
3
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Page 4
FDMC6890NZ Dual N-Channel PowerTrench
Typical Characteristics (Q1 N-Channel)T
12
10
8
6
4
, DRAIN CURRENT (A)
D
2
I
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 1.
1.4
ID = 4A
1.3
V
GS
1.2
1.1
1.0
NORMALIZED
0.9
0.8
0.7
DRAIN TO SOURCE ON-RESISTANCE
-50 -25 0 25 50 75 100 125 150
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
VGS = 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 2.5V
VGS = 1.8V
VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
= 4.5V
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
= 25°C unless otherwise noted
J
3.0
2.5
VGS = 1.8V
2.0
1.5
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
024681012
ID, DRAIN CURRENT(A)
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
200
(mΩ)
160
120
, DRAIN TO
80
DS(on)
r
SOURCE ON-RESISTANCE
40
1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 2.5V
GS
V
= 4.5V
GS
ID = 4A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
o
T
= 25
C
J
®
MOSFET
9
8
7
6
5
4
3
2
, DRAIN CURRENT (A)
D
I
1
0
0.00.51.01.52.02.5
Figure 5. Transfer Characteristics
FDMC6890NZ Rev.C
PULSE DURATI ON = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = -55oC
20
10
V
= 0V
GS
1
TJ = 150oC
0.1
TJ = 25oC
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
TJ = -55oC
Forward Voltage vs Source Current
4
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Page 5
FDMC6890NZ Dual N-Channel PowerTrench
Typical Characteristics (Q1 N-Channel)T
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
, GATE TO SOURCE VOLTAGE(V)
GS
0.0
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 7.
Gate Charge Characteristics Figure 8.
6
5
4
3
2
TJ = 125oC
, AVALANCHE CURRENT(A)
AS
I
1
1
0.01 0.1 1 10
tAV, TIME IN AVALANCHE(ms)
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
V
= 8V
DD
V
= 12V
DD
Qg, GATE CHARGE(nC)
TJ = 25oC
V
= 10V
DD
= 25°C unless otherwise noted
J
400
100
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
20
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
to Source Voltage
20
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.1
, DRAIN CURRENT (A)
D
I
0.01
0.1 1 10
DS(on)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10.
Operating Area
C
iss
C
oss
C
rss
20
C a p a c i t a n c e v s D r a i n
100us
1ms
10ms
100ms
1s
SINGLE PULSE
= MAX RATED
T
J
T
= 25OC
A
10s
DC
60
F o r w a r d B i a s S a f e
®
MOSFET
100
10
), PEAK TRANSIENT POWER (W)
1
PK
P(
0.5
10
FDMC6890NZ Rev.C
FOR TEMPERATURES
o
VGS = 10V
SINGLE PULSE
-4
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
0
10
ABOVE 25
CURRENT AS FOLLOWS:
1
10
Figure 11. Single Pulse Maximum Power Dissipation
5
I = I
25
C DERATE PEAK
150 TA–
------------------------
125
TA = 25oC
2
10
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3
10
Page 6
FDMC6890NZ Dual N-Channel PowerTrench
Typical Characteristics (Q1 N-Channel)T
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
θJA
0.1
IMPEDANCE, Z
NORMALIZED THERMAL
0.01
0.006
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-4
10
-3
10
-2
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
= 25°C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
0
10
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
1
10
2
10
3
10
®
MOSFET
FDMC6890NZ Rev.C
6
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Page 7
Typical Characteristics (Q2 N-Channel)
FDMC6890NZ Dual N-Channel PowerTrench
10
VGS = 4.5V
8
6
4
2
, DRAIN CURRENT (A)
D
I
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 2.5V
VGS = 1.8V
Figure 13. On Region Characteristics
1.5
ID = 4A
1.4
V
= 4.5V
GS
1.3
1.2
1.1
1.0
NORMALIZED
0.9
0.8
0.7
DRAIN TO SOURCE ON-RESISTANCE
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 15. Normalized On Resistance
vs Junction Temperature
3.0
PULSE DURATION = 80µs
2.5
VGS = 1.8V
2.0
1.5
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 2 4 6 8 10 12
ID, DRAIN CURRENT(A)
DUTY CYCLE = 0.5%MAX
V
= 2.5V
GS
V
= 4.5V
GS
Figure 14. Normalized on-Resistance vS Drain
Current and Gate Voltage
200
ID = 4A
(mΩ)
160
120
, DRAIN TO
80
DS(on)
r
SOURCE ON-RESISTANCE
40
23456
T
= 25
J
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
o
C
TJ = 150oC
Figure 16. On-Resistance vs Gate to
Source Voltage
®
MOSFET
6
5
4
3
2
, DRAIN CURRENT (A)
1
D
I
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 17. Transfer Characteristics
FDMC6890NZ Rev.C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = -55oC
20
10
V
= 0V
GS
1
TJ = 150oC
0.1
TJ = 25oC
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
TJ = -55oC
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
7
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Page 8
Typical Characteristics
FDMC6890NZ Dual N-Channel PowerTrench
4.5
4.0
V
= 8V
DD
3.5
3.0
V
= 10V
DD
2.5
2.0
V
DD
1.5
1.0
0.5
, GATE TO SOURCE VOLTAGE(V)
GS
0.0
V
0.0 0.4 0.8 1.2 1.6 2.0
Qg, GATE CHARGE(nC)
Figure 19. Gate Charge Characteristics
6
5
4
3
TJ = 25oC
2
, AVALANCHE CURRENT(A)
AS
I
1
1
1E-3 0.01 0.1 1
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
Figure 21. Unclamped Inductive
Switching Capability
= 12V
400
C
iss
100
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
20
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
oss
C
rss
20
Figure 20. Capacitance vs Drain
to Source Voltage
20
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.1
, DRAIN CURRENT (A)
D
I
0.01
0.1 1 10
DS(on)
SINGLE PULSE
= MAX RATED
T
J
T
= 25OC
A
VDS, DRAIN to SOURCE VOLTAGE (V)
100us
1ms
10ms
100ms
1s
10s
DC
60
®
MOSFET
F i g u r e 2 2 . F o r w a r d B i a s S a f e
Operating Area
200
100
10
), PEAK TRANSIENT POWER (W)
PK
P(
FDMC6890NZ Rev.C
VGS = 10V
SINGLE PULSE
1
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
0
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
25
1
10
o
C DERATE PEAK
150 TA–
------------------------
125
TA = 25oC
2
10
3
10
Figure 23. Single Pulse Maximum Power Dissipation
8
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Page 9
Typical Characteristics
2
1
θJA
0.1
0.01
IMPEDANCE, Z
NORMALIZED THERMAL
1E-3
-5
10
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-4
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-3
10
-2
10
-1
10
0
10
t, RECTANGULAR PULSE DURATION (s)
Figure 24. Transient Thermal Response Curve
FDMC6890NZ Dual N-Channel PowerTrench
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
1
10
2
10
3
10
®
MOSFET
FDMC6890NZ Rev.C
9
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Page 10
FDMC6890NZ Dual N-Channel PowerTrench
®
MOSFET
FDMC6890NZ Rev.C
10
www.fairchildsemi.com
Page 11
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
®
UniFET™
UltraFET
VCX™
Wire™
®
FDMC6890NZ Dual N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDMC6890NZ Rev. C
Rev. I20
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