Datasheet FDMC510P Datasheet (Fairchild)

FDMC510P

P-Channel PowerTrench® MOSFET

-20 V, -18 A, 8.0 mΩ
Features

 Max r
 Max r
 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 100% UIL Tested
 Termination is Lead-free and RoHS Compliant
 HBM ESD capability level >2 KV typical (Note 4)

= 8.0 mΩ at VGS = -4.5 V, ID = -12 A

DS(on)

= 9.8 mΩ at VGS = -2.5 V, ID = -10 A

DS(on)

= 13 mΩ at VGS = -1.8 V, ID = -9.3 A

DS(on)

= 17 mΩ at VGS = -1.5 V, ID = -8.3 A

DS(on)

DS(on)

General Description

This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been

optimized for r

ruggedness.

Applications

 Battery Management
 Load Switch

®

, switching performance and

DS(ON)

process that has

FDMC510P P-Channel PowerTrench

June 2010

®

MOSFET

Top

Pin 1

S

Bottom

G

S

S

D

D

D

D

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
Drain Current -Continuous (Package limited) TC = 25 °C -18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed -50
Single Pulse Avalanche Energy 37 mJ
Power Dissipation TC = 25 °C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C -54

C

= 25 °C (Note 1a) -12

A

= 25 °C (Note 1a) 2.3

A

Thermal Characteristics

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC510P FDMC510P MLP 3.3X3.3 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDMC510P Rev.C5

°C/W

1

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FDMC510P P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V

I

= -250 µA, referenced to 25 °C -12 mV/°C

D

= 0 V -1 µA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA -0.4 -0.5 -1.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= -250 µA, referenced to 25 °C 3 mV/°C

D

= -4.5 V, ID = -12 A 6.4 8.0

V

GS

V

= -2.5 V, ID = -10 A 7.6 9.8

GS

= -1.8 V, ID = -9.3 A 9.2 13

V

GS

= -1.5 V, ID = -8.3 A 11 17

V

GS

= -4.5 V, ID = -12 A, TJ = 125 °C 8.5 12

V

GS

Forward Transconductance VDS = -5 V, ID = -12 A 75 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 840 1120 pF
Reverse Transfer Capacitance 738 1110 pF

= -10 V, VGS = 0 V,

V

DS

f = 1 MHz

5910 7860 pF

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 34 55 ns
Turn-Off Delay Time 338 540 ns
Fall Time 170 272 ns
Total Gate Charge VGS = 0 V to -4.5 V
Total Gate Charge VGS = 0 V to -2.5 V 50 70 nC
Gate to Source Charge 6.3 nC
Gate to Drain “Miller” Charge 20.4 nC

= -10 V, ID = -12 A,

V

DD

V

= -4.5 V, R

GS

GEN

= 6 Ω

Drain-Source Diode Characteristics

V

= 0 V, IS = -12 A (Note 2) -0.70 -1.3

V

SD

t

rr

Q

rr

Notes:
1: R

θJA

by the user’s board design.

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 20 32 nC

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz c o p p e r

GS

= 0 V, IS = -2 A (Note 2) -0.53 -1.2

V

GS

= -12 A, di/dt = 100 A/µs

I

F

= -10 V,

V

DD

I

= -12 A

D

15 27 ns

83 116 nC

35 57 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper

V

is determined

θJA

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: Starting T
4: No gate overvoltage rating is implied.

FDMC510P Rev.C5

= 25oC; P-Ch: L = 3 mH, IAS = -5 A, VDD = -20 V, VGS = -4.5 V.

J

2

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FDMC510P P-Channel PowerTrench

Typical Characteristics T

50

40

30

20

DRAIN CURRENT (A)

,

D

10

-I

0

0.0 0.5 1.0 1.5 2.0

Figure 1.

1.5

ID = -12 A

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

= -4.5 V

V

GS

-75 -50 -25 0 25 50 75 100 125 150

VGS = -4.5 V

VGS = -2.5 V

VGS = -1.8 V

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX

-V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

T

,

JUNCTION TEMPERATUR E

J

= 25 °C unless otherwise noted

J

VGS = - 1.5 V

VGS = -1.2 V

o

(

C

)

5

PULSE DURATION = 80 µs

4

DUTY CYCLE = 0.5%MAX

VGS = -1.2 V

3

2

NORMALIZED

VGS = -1.5 V

VGS = -1.8 V

1

V

= -2.5 V

DRAIN TO SOURCE ON-RESISTANCE

0

0 1020304050

-I

D

GS

,

DRAIN CURRENT (A)

V

GS

Normalized On-Resistance

vs Drain Current and Gate Voltage

25

)

Ω

20

m

(

15

10

, DRAIN TO

DS(on)

r

5

SOURCE ON-RESISTANCE

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

T

= 25 oC

J

-V

,

GATE TO S OURCE VO LTAGE (V

GS

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX

ID = -12 A

TJ = 125 oC

)

= -4.5 V

®

MOSFET

Fi g ure 3 . Norma l i zed O n Resi s t ance

50

40

30

20

, DRAIN CURRENT (A)

D

10

-I

0

0.0 0.5 1.0 1.5 2.0

FDMC510P Rev.C5

vs Junction Temperature

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX

V

= -5 V

DS

TJ = 150 oC

TJ = 25 oC

TJ = -55 oC

-VGS, GATE TO SOURCE VO LTAGE (V)

Figure 5. Transfer Characteristics

Figure 4.

On-Resi st an ce vs Gate to

Source Voltage

100

V

= 0 V

GS

10

TJ = 150 oC

1

TJ = 25 oC

0.1

, REVERSE DRAIN CURRENT (A)

S

-I

0.01

0.00.20.40.60.81.01.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Sou rc e t o D rain Di ode

TJ = -55 oC

Forward Voltage vs Source Current

3

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FDMC510P P-Channel PowerTrench

Typical Characteristics T

4.5

ID = -12 A

3.0

V

= -8 V

DD

1.5

, GATE TO SOURCE VOLTAGE (V)

GS

-V

0.0
020406080100

Figure 7.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

20

10

, AVALANCHE CURRENT (A)

AS

-I

1

0.1 1 10 100 1 000

tAV, TIME IN AVA LANCHE (m s )

VDD = -10 V

TJ = 125 oC

= 25 °C unless otherwise noted

J

VDD = -12 V

TJ = 25 oC

TJ = 100 oC

20000

10000

CAPACITANCE (pF)

1000

400

f = 1 MHz

= 0 V

V

GS

0.1 1 10 20

-VDS, DRAIN TO SOURCE VOLTA G E (V)

Capac i t a n c e vs Dr a i n

to Source Voltage

60

50

40

V

= -2.5 V

GS

30

20

, DRAIN CURRENT (A)

D

-I
10

Limited by Package

0

25 50 75 100 125 150

V

= -4.5 V

GS

R

= 3 oC/W

θJC

T

, CASE TEMPERATURE (

C

C

iss

C

oss

C

rss

®

MOSFET

o

C)

100

10

1

, DRAIN CURRENT (A)

0.1

D

-I

0.01

0.01 0.1 1 10 80

FDMC510P Rev.C5

Figure 9.

Un c l a m pe d I n du c t i ve

Switching Capability

100 us

1 ms

10 ms

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE

= MAX RATED

T

J

R

= 125 oC/W

θ

JA

T

= 25 oC

A

-VDS, DRAIN TO SOURCE VOLTAGE (V)

100 ms

1 s
10 s
DC

Figure 11. Forward Bias Safe

Operating Area

Figure 10.

Ma ximum Con tin uou s Dr ain

Current vs Case Temperature

1000

100

SINGLE PULSE
R

T

θJA

A

= 25

= 125

o

o

C/W

C

10

), PEAK TRANSIENT POWER (W)

1

PK

P(

0.5
10-410-310-210

t, PULSE WIDTH (sec)

-1

110

100 1000

Figure 12. Single Pulse Maximum

Power Dissipation

4

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FDMC510P P-Channel PowerTrench

Typical Characteristics T

2

1

JA

θ

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

-4

10

-3

10

Figure 13.

= 25 °C unless otherwise noted

J

P

DM

SINGLE PULSE
R

= 125 oC/W

θ

JA

-2

10

t, RECTANGULAR PULSE DURATION (sec)

-1

10

110

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

θJA

Junction-to-Ambient Transient Thermal Response Curve

t

1

t

2

1/t2

x R

+ T

θJA

A

100 1000

®

MOSFET

FDMC510P Rev.C5

5

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Dimensional Outline and Pad Layout

FDMC510P P-Channel PowerTrench

®

MOSFET

FDMC510P Rev.C5

6

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FDMC510P P-Channel PowerTrench

®

MOSFET

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

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intended for surgical implant into the body or (b) support or sustain life,
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Definition of Terms

.

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Advance Information Formative / In Design

Preliminary First Production

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Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I48

FDMC510P Rev.C5 7 www.fairchildsemi.com