Datasheet FDMA1023PZ Datasheet (Fairchild)

FDMA1023PZ

Dual P-Channel PowerTrench®MOSFET

–20V, –3.7A, 72m:
Features

 Max r

 Max r

 Max r

 Max r

 Low profile - 0.8 mm maximum - in the new package

MicroFET 2x2 mm

 HBM ESD protection level > 2kV typical (Note 3)

 RoHS Compliant



Free from halogenated compounds and antimony
oxides

= 72m: at VGS = –4.5V, ID = –3.7A

DS(on)

= 95m: at VGS = –2.5V, ID = –3.2A

DS(on)

= 130m: at VGS = –1.8V, ID = –2.0A

DS(on)

= 195m: at VGS = –1.5V, ID = –1.0A

DS(on)

General Description

This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction
source configuration, bi-directional current flow is possible.

The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.

FDMA1023PZ Dual P-Channel PowerTrench

May 2009

tm

losses. When connected in the typical common

®

MOSFET

Pin 1

G1

D2

S2

D2

S1

G1

D2

6

1

2

3

1.5

0.7

D1

G2

5

4

S2

S1

D1

D1

MicroFET 2X2

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage –20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous (Note 1a) –3.7

-Pulsed –6

Power Dissipation (Note 1a)
(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150 °C

G2

= 25°C unless otherwise noted

A

Thermal Characteristics

R

TJA

R

TJA

R

TJA

R

TJA

Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86

Thermal Resistance for Single Operation, Junction to Ambient  (Note 1b) 173

Thermal Resistance for Dual Operation, Junction to Ambient  (Note 1c) 69

Thermal Resistance for Dual Operation, Junction to Ambient  (Note 1d) 151

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

023 FDMA1023PZ MicroFET 2X2 7” 8mm 3000 units

©2009 Fairchild Semiconductor Corporation
FDMA1023PZ Rev.C3

1

www.fairchildsemi.com

FDMA1023PZ Dual P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V

Breakdown Voltage Temperature
Coefficient

I

= –250PA, referenced to 25°C –11 mV/°C

D

Zero Gate Voltage Drain Current VDS = –16V, VGS= 0V –1 PA

Gate to Source Leakage Current VGS = ±8V, VDS= 0V ±10 PA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = –250PA –0.4 –0.7 –1.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On-Resistance

= –250PA, referenced to 25°C 2.5 mV/°C

I

D

V

= –4.5V, ID = –3.7A 60 72

GS

= –2.5V, ID = –3.2A 75 95

V

GS

= –1.8V, ID = –2.0A 100 130

V

GS

= –1.5V, ID = –1.0A 130 195

V

GS

= –4.5V, ID = –3.7A,TJ =125°C 81 91

V

GS

Forward Transconductance VDS = –5V, ID = –3.7A 12 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance 100 135 pF

Reverse Transfer Capacitance 90 135 pF

= –10V, VGS = 0V,

V

DS

f = 1MHz

490 655 pF

m:

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time 12 22 ns

Turn-Off Delay Time 64 103 ns

Fall Time 37 60 ns

Total Gate Charge

Gate to Source Gate Charge 0.7 nC

Gate to Drain “Miller” Charge 2.0 nC

Drain-Source Diode Characteristics

I

S

V

SD

t

rr

Q

rr

Maximum Continuous Source-Drain Diode Forward Current

Source to Drain Diode Forward Voltage VGS= 0V, IS= –1.1A (Note 2) –0.8 –1.2 V

Reverse Recovery Time

Reverse Recovery Charge 15 23 nC

VDD = –10V, ID = –1A

= –4.5V, R

V

GS

V

= –10V, ID = –3.7A

DD

= –4.5V

V

GS

= –3.7A, di/dt = 100A/Ps

I

F

GEN

= 6:

918ns

8.6 12 nC

–1.1 A

32 48 ns

FDMA1023PZ Rev.C3

2

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Notes:

1: R

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

user's board design.
(a) R

= 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB. For single operation.

TJA

(b) R

= 173°C/W when mounted on a minimum pad of 2 oz copper. For single operation.

TJA

(c) R

(d) R

= 69oC/W when mounted on a 1in2pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB, For dual operation.

TJA

= 151oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.

TJA

is guaranteed by design while R

TJC

is determined by the

TJA

FDMA1023PZ Dual P-Channel PowerTrench

o

C/W when

a) 86oC/W when
mounted on a

2

1 i n

pad of 2

oz copper.

2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0%

3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

b) 173
mounted on a
mini mum pad of
2 oz copper.

o

c) 69

C/W when

mounted on a

2

1 in

pad of 2

oz copper.

o

C/W when

d) 151
mounted on a
minimum pad of
2 oz copper.

®

MOSFET

FDMA1023PZ Rev.C3

3

www.fairchildsemi.com

FDMA1023PZ Dual P-Channel PowerTrench

:

Typical Characteristics T

6

5

4

3

2

, DRAIN CURRENT (A)

D

-I

1

0

0.00.51.01.52.0

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

1.6

ID = -3.7A

= -4.5V

V

GS

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

VGS = -1.8V

VGS = -4.5V

VGS = -3.0V
VGS = -2.5V
VGS = -2.0V

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

VGS = -1.5V

2.6

VGS = -1.5V

2.2

VGS = -1.8V

1.8

1.4

NORMALIZED

1.0

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

0.6

DRAIN TO SOURCE ON-RESISTANCE

0123456

VGS = -3.0V

-ID, DRAIN CURRENT(A)

VGS = -2.0V

VGS = -2.5V

VGS = -4.5V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

200

)

ID= -1.85A

(m

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

160

120

, DRAIN TO

DS(on)

r

80

SOURCE ON-RESISTANCE

40

0123456

Figure 4.

TJ= 25oC

-VGS, GATE TO SOURCE VOLTAGE (V)

O n - R es i s t a n c e vs G a t e t o

TJ= 125oC

Source Voltage

®

MOSFET

6

5

4

3

2

, DRAIN CURRENT (A)

D

1

-I

0

0.0 0.5 1.0 1.5 2.0

Figure 5. Transfer Characteristics

FDMA1023PZ Rev.C3

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

VDD= -5V

TJ= 125oC

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = -55oC

10

V

= 0V

GS

1

TJ= 125oC

0.1

TJ = 25oC

0.01

1E-3

, REVERSE DRAIN CURRENT (A)

S

-I

1E-4

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

4

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FDMA1023PZ Dual P-Channel PowerTrench

T

T

T

Typical Characteristics T

5

ID= -3.7A

4

3

2

1

, GATE TO SOURCE VOLTAGE(V)

GS

0

-V

0246810

Figure 7.

Gate Charge Characteristics Figure 8.

20

r

DS(on)

LIMIT

10

1

VGS=-4.5V

0.1

SINGLE PULSE

, DRAIN CURRENT (A)

D

-I

0.01

0.1 1 10

o

R

=173

JA

o

T

= 25

C

A

-VDS, DRAIN to SOURCE VOLTAGE (V)

F ig ur e 9. Fo rw ar d B i as Sa f e

VDD= -5V

VDD = -15V

Qg, GATE CHARGE(nC)

C/W

Operating Area

= 25°C unless otherwise noted

J

VDD = -10V

100us

1ms

10ms

100ms
1s

10s
DC

60

1000

C

C

oss

100

CAPACITANCE (pF)

f = 1MHz
V

= 0V

GS

40

0.1 1 10

C

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Capacitance Characteristics

100

VGS = -10V

FOR TEMPERATURES

o

ABOVE 25

CURRENT AS FOLLOWS:

10

SINGLE PULSE
R

= 173oC/W

JA

1

=25oC

T

), PEAK TRANSIENT POWER (W)

PK

P(

A

0.5

10-410-310-210-110010110210

Figure 10.

SINGLE PULSE

t, PULSE WIDTH (s)

S i n g l e P u l s e M a x i m u m

I = I

25

C DERATE PEAK

150 TA–

-----------------------

125

TA = 25oC

Power Dissipation

iss

rss

20

®

MOSFET

3

1

JA

0.1

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

0.005

FDMA1023PZ Rev.C3

2

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES:
DUTY FACTOR: D = t

SINGLE PULSE

-4

10

-3

10

-2

10

-1

10

0

10

PEAK TJ = PDM x Z

1

10

P

DM

t

1

t

2

1/t2

x R

+ T

TJA

TJA

A

2

10

3

10

t, RECTANGULAR PULSE DURATION (s)

Figure 11. Transient Thermal Response Curve

5

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Dimensional Outline and Pad Layout

FDMA1023PZ Dual P-Channel PowerTrench

®

MOSFET

FDMA1023PZ Rev.C3

rev3

6

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THEREIN, WHICH COVERS THESE PRODUCTS.

FDMA1023PZ Dual P-Channel PowerTrench

®

MOSFET

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

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Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMA1023PZ Rev.C3

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I40

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