Page 1
FDG312P
P-Channel 2.5V Specified PowerT rench MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Applications
• Load switch
• Battery protection
• Power management
Features
• -1.2 A, -20 V. R
R
• Low gate charge (3.3 nC typical).
• High performance trench technology for extremely
low R
DS(ON)
.
• Compact industry standard SC70-6 surface mount
package.
= 0.18 Ω @ V
DS(on)
= 0.25 Ω @ V
DS(on)
February 1999
= -4.5 V
GS
= -2.5 V.
GS
FDG312P
S
D
1
6
D
2
G
D
SC70-6
D
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
3
3
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed -6
Power Dissipation for Si ngl e Operat i on
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
(Note 1)
(Note 1a)
(Note 1c)
8V
±
-1.2 A
0.75 W
0.55
0.48
5
4
C
°
Thermal Characteristics
R
JA
θ
Thermal Resistance, J unc tion-to-Ambient
(Note 1)
260
C/W
°
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
12
.
1999 Fairchild Semiconductor Corporation
FDG312P 7’’ 8mm 3000 units
FDG312P Rev. C
Page 2
FDG312P
yp
DMOS Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
Breakdown Voltage Temperature
DSS
Coefficient
J
ID = -250 µA, Referenced to 25°C-19 mV/
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.9 -1.5 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = -250 µA, Referenced to 25°C2.5 mV/
VGS = -4.5 V, ID = -1.2 A
V
= -4.5 V, ID = -1.2 A @125°C
GS
V
= -2.5 V, ID = -1 A
GS
On-State Drain Current VGS = -4.5 V, VDS = -5 V -3 A
Forward Transconductance VDS = -5 V, ID = -1.2 A 3.8 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 330 pF
Output Capacitance 80 pF
= -10 V, VGS = 0 V,
V
DS
f = 1.0 MHz
Reverse Transfer Capacitance
Max Units
0.135
0.200
0.187
0.18
0.29
0.25
35 pF
C
°
A
µ
C
°
Ω
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 7 15 ns
Turn-On Rise Time 12 22 ns
Turn-Off Delay Time 16 26 ns
Turn-Off Fall Time
Total Gate Charge 3.3 5 nC
Gate-Source Charge 0.8 nC
Gate-Drain Charge
V
= -5 V, ID = -0.5 A,
DD
V
= -4.5 V, R
GS
= -10 V, ID = -1.2 A,
V
DS
= -4.5 V
V
GS
GEN
= 6
Ω
512ns
0.7 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -0.6 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.6 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
is guaranteed by design while R
θJC
a) 170°C/W when
mounted on a 1 in
pad of 2oz copper.
is determined by the user's board design.
θJA
2
b) 225°C/W when
mounted on a half
of package sized 2oz.
copper.
(Note 2)
-0.83 -1.2 V
c) 260°C/W when
mounted on a minimum
pad of 2oz copper.
FDG312P Rev. C
Page 3
T ypical Characteristics
FDG312P
6
V = -4.5V
GS
5
4
3
2
1
D
- I , DRAIN-SOURCE CURRENT (A)
0
01234
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.6
I = -1.2A
D
V = -4.5V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESI ST ANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
2.4
2.2
V = -2.0V
2
GS
1.8
1.6
1.4
DS(on)
R , NORMALIZED
1.2
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0123456
-2.5V
-3.0V
-3.5V
- I , DRAIN CURRENT (A)
D
-4.0V
-4.5V
Figure 2. On-Resistance Variation
with Drain Current and Gate V oltage.
0.5
0.4
0.3
0.2
0.1
DS(ON)
R , ON-RESISTANCE (OHM)
0
12345
-V , GATE TO SOURCE VOLTAGE (V)
GS
I = -0.6A
D
T = 125°C
J
T = 25°C
J
Figure 3. On-Resistance Variation
with Temperature.
4
V = -5V
DS
3
2
1
D
-I , DRAIN CURRENT (A)
0
0.5 1 1.5 2 2.5
-V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
125°C
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
V = 0V
GS
T = 125°C
1
0.1
0.01
S
- I , REVERSE DRAIN CURRENT (A)
0.001
0.2 0.4 0.6 0.8 1 1.2 1.4
J
25°C
-55°C
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward V oltage
Variation with Source Current
and Temperature.
FDG312P Rev. C
Page 4
Typical Characteristics (continued)
FDG312P
5
I = -1.2A
D
4
V = -5V
DS
-10V
3
2
1
GS
-V , GATE-SOURCE VOLTAGE (V)
0
01234
Q , GATE CHARGE (nC)
g
-15V
1000
300
100
CAPACITANCE (pF)
30
f = 1 MHz
V = 0 V
GS
10
0.1 0.2 0.5 1 2 5 10 20
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
10
3
RDS(ON) LIMIT
1
DC
1s
10s
0.3
0.1
V = -4.5V
D
-I , DRAIN CURRENT (A)
0.03
0.01
GS
SINGLE PULSE
R = 260°C/W
JA
θ
T = 25°C
A
0.1 0.2 0.5 1 2 5 10 20 50
-V , DRAIN-SOURCE VOLTAGE (V)
DS
1ms
10ms
100ms
30
24
18
12
POWER (W )
6
0
0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)
C
iss
C
oss
C
rss
SINGLE PULSE
= 260oC/W
R
JA
θ
T
= 25oC
A
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
R (t) = r(t) * R
JA
0.2
0.1
0.1
0.05
r(t), NORMALIZED EFFECTIVE
0.05
0.01
TRANSIENT THERMAL RESISTANCE
0.005
0.01
0.02
Single Pulse
0.0001 0.001 0.01 0.1 1 10 100 300
t , TIME (sec)
1
θ
R =260°C/W
JA
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
A
Duty Cycle, D = t / t
θ
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
JA
θ
JA
2
1
FDG312P Rev. C
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
CMOS
E
TM
FACT™
FACT Quiet Series™
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
Loading...