Datasheet FDFS2P106A Datasheet (Fairchild Semiconductor)

FDFS2P106A

Integrated 60V P-Channel PowerTrench

June 2001



MOSFET and Schottky Diode

FDFS2P106A

General Description

The FDFS2P106A combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier recti fier in an SO-8 package.

This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on­state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.

D

D

C

C

SO-8

Pin 1

A

Absolute Maximum Ratings T

G

S

A

o

=25

C unless otherwise noted

A

Features

• –3.0 A, –60V R
R

• V

< 0.45 V @ 1 A (TJ = 125°C)

F

V

< 0.53 V @ 1 A

F

V

< 0.62 V @ 2 A

F

• Schottky and MOSFET incorporated into single
power surface mount SO-8 package

• Electrically independent S chottky and MOSFET
pinout for design flexibility

A
A
S

G

= 110 mΩ @ VGS = –10 V

DS(ON)

= 140 mΩ @ VGS = –4.5 V

DS(ON)

81
72
63

54

C
C
D
D

Symbol Parameter Ratings Units

V

MOSFET Drain-Source Voltage

DSS

V

MOSFET Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a)
– Pulsed
PD

TJ, T

STG

V

Schottky Repetiti ve P eak Reverse Voltage 45 V

RRM

IO Schottky Average Forward Current (Note 1a) 1 A

Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)

Operating and Storage Junction Temperature Range

(Note 1c)

–60

±20

–3

–10

1

0.9

–55 to +150

V
V
A

W

°C

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDFS2P106A FDFS2P106A 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation

FDFS2P106A Rev B(W)

FDFS2P106A

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

= 0 V, ID = –250 µA

V

GS

= –250 µA, Referenced to 25°C

I

D

–60 V

–60

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–S t ate Drain Current VGS = –10 V, VDS = –5 V –10 A

D(on)

= VGS, ID = –250 µA

V

DS

= –250 µA,Referenced to 25°C

I

D

VGS = –10 V, ID = –3A

= –4.5 V, ID = –2.7 A

V

GS

= –10 V, ID = –3 A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5 V, ID = –3.3 A 8 S

–1 –1.6 –3 V

4

91
112
150

110
140
192

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 714 pF

iss

C

Output Capacitance 84 pF

oss

C

Reverse Transfer Capacitance

rss

= –30 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

33 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 8 15 ns

d(on)

tr Turn–On Rise Time 11 19 ns
t

Turn–Off Delay Time 28 45 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 15 21 nC
Qgs Gate–Source Charge 2 nC
Qgd Gate–Drain Charge

= –30 V, ID = –1 A,

V

DD

= –10 V, R

V

GS

= –30V, ID = –3A,

V

DS

V

= –10 V

GS

GEN

= 6 Ω

8.5 17 ns

3 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD Drain–Source Diode Forward

Voltage

VGS = 0 V, IS = –1.3 A (Note 2) –0.8 –1.2 V

FDFS2P106A Rev B(W)

FDFS2P106A

Electrical Characteristics (continued) T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Schottky Diode Characteristics

IR Reverse Leakage VR = 45 V

VF Forward Voltage IF = 1 A

I

= 2 A

F

= 25°C

T

J

= 125°C

T

J

= 25°C

T

J

= 125°C

T

J

= 25°C

T

J

= 125°C

T

J

2.8 80

2.2 80 mA

0.44 0.53 V

0.34 0.45

0.49 0.62

0.42 0.57

Thermal Characteristics

R

θJA

R

θJC

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

is guaranteed by design while R

θJC

a) 78°C/W when

mounted on a

0.5in2 pad of 2
oz copper

is determined by the user's board design.

θCA

(Note 1a) 78

(Note 1) 40

b) 125°C/W when

mounted on a

0.02 in2 pad of
2 oz copper

°C/W
°C/W

c) 135°C/W when

mounted on a
minimum pad.

µA

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDFS2P106A Rev B(W)

V

E

A

Typical Characteristics

10

VGS = -10V

-6.0V

8

6

4

2

, DRAIN-SOURCE CURRENT (A)

D

-I

0

012345

-4.5V

-3.5V

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

-3.0V

-2.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

2.2

2

VGS = -3.0V

1.8

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0246810

-3.5V

-4.0V

- I

, DRAIN CURRENT (A)

D

-4.5V

Drain Current and Gate Voltage.

-6.0V

FDFS2P106A

-10

2

ID = -3A

1.8

1.6

1.4

1.2

, NORMALIZED

DS(ON)

0.8

R

0.6

DRAIN-SOURCE ON-RESISTANC

0.4

= -10V

V

GS

1

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figure 3. On-Resistance Variation with

Temperature.

10

VDS = -5V

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

11.522.533.54

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

125oC

25oC

0.29

ID = -1.5

0.24

0.19

0.14

, ON-RESISTANCE (OHM)

TA = 25oC

0.09

DS(ON)

R

0.04
246810

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDFS2P106A Rev B(W)

)

)

Typical Characteristics

10

ID = -3A

8

6

VDS = -20V

-40V

-30V

1000

800

600

FDFS2P106A

f = 1MHz

= 0 V

V

GS

C

ISS

4

, GATE-SOURCE VOLTAGE (V)

2

GS

-V

0

03691215

Q

, GATE CHARGE (nC)

g

400

CAPACITANCE (pF)

200

0

0 5 10 15 20

C

OSS

C

RSS

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

10

1

0.1

0.01

, FORWARD LEAKAGE CURRENT (A

F

I

0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

TJ = 125oC

TJ = 25oC

VF, FORWARD VOLTAGE (V)

1.00E-01

1.00E-02

1.00E-03

1.00E-04

1.00E-05

1.00E-06

1.00E-07

, REVERSE LEAKAGE CURRENT (A

R

I

1.00E-08
0 10 20 30 40 50 60

TJ = 125oC

TJ = 25oC

VR, REVERSE VOLTAGE (V)

Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current.

1

D = 0.5

0.2

0.1

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.01

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) + R

θJA

R

= 135 °C/W

JA

θ

P(pk)

t

1

t

2

- TA = P * R

T

J

Duty Cycle, D = t

θJA

(t)

JA

θ

/ t

1

2

0.001 0.01 0.1 1 10 100 1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDFS2P106A Rev B(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOL T™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™



OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER



SMART ST ART™

ST AR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H3