Datasheet FDFS2P103A Datasheet (Fairchild Semiconductor)

August 2002

A

FDFS2P103A

Integrated P-Channel PowerTrench



MOSFET and Schottky Diode

FDFS2P103

General Description

The FDFS2P103A combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier recti fier in an SO-8 package.

This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on­state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.

D

D

C

C

SO-8

Pin 1

A

Absolute Maximum Ratings T

G

S

A

o

=25

C unless otherwise noted

A

Features

• –5.3 A, –30V R
R

• V

< 0.35 V @ 1 A (TJ = 125°C)

F

V

< 0.25 V @ 1 A (TJ = 25°C)

F

• Schottky and MOSFET incorporated into single
power surface mount SO-8 package

• Electrically independent S chottky and MOSFET
pinout for design flexibility

A
A
S

G

= 59 mΩ @ VGS = –10 V

DS(ON)

= 92 mΩ @ VGS = –4.5 V

DS(ON)

81
72
63

54

C
C
D
D

Symbol Parameter Ratings Units

V

MOSFET Drain-Source Voltage

DSS

V

MOSFET Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a)
– Pulsed
PD

TJ, T

STG

V

Schottky Repetiti ve P eak Reverse Voltage 30 V

RRM

IO Schottky Average Forward Current (Note 1a) 1 A

Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)

Operating and Storage Junction Temperature Range

(Note 1c)

–30

±25

–5.3

–20

1

0.9

–55 to +150

V
V
A

W

°C

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDFS2P103A FDFS2P103A 13’’ 12mm 2500 units

2002 Fairchild Semiconductor Corporation

FDFS2P103A Rev C (W)

FDFS2P103A

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1

DSS

I

Gate–Body Leakage VGS = ±25 V, VDS = 0 V ±100 nA

GSS

Breakdown Voltage Temperature
Coefficient

J

= 0 V, ID = –250 µA

V

GS

I

= –250 µA,

D

Referenced to 25°C

–30 V

–22

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

= VGS, ID = –250 µA

V

DS

I

= –250 µA,

D

Referenced to 25°C
VGS = –10 V, ID = –5.3 A

= –4.5 V, ID = –4 A

V

GS

=–10 V, ID = –5.3A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5V, ID = –5.3 A 8.9 S

–1 –1.8 –3 V

4.2
50

76
68

59
92
88

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 535 pF

iss

C

Output Capacitance 135 pF

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance V

= –15 V, VGS = 0 V,

V

DS

f = 1.0 MHz

= 0 V, f = 1.0 MHz 4.7

GS

75 pF

Ω

Switching Characteristics (Note 2)

t

Turn–On Delay Time

d(on)

tr Turn–On Rise Time 16 28 ns
t

Turn–Off Delay Time 15 26 ns

d(off)

= –15 V, ID = –1 A,

V

DD

= –10 V, R

V

GS

GEN

= 6 Ω

tf Turn–Off Fall Time
Qg Tot al Gat e Charge 5.7 8 nC

= –15 V, ID = –5.3 A,

V

Qgs Gate–Source Charge 1.8 nC
Qgd Gate–Drain Charge

DS

V

GS

= –5 V

11 21 ns

10 19 ns

2.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD

Drain–Source Diode Forward
Voltage

V

= 0 V, IS = –1.3 A (Note 2)

GS

–0.8 –1.2

Schottky Diode Characteristics

IR Reverse Leakage VR = 30 V 160 500

225 280 mV
80 250 mV
305 350 mV
185 250 mV
380 420 mV

FDFS2P103A Rev C (W)

VF Forward Voltage

IF = 0.1A

IF = 1A
I

= 3A

F

TJ = 25°C
T

= 125°C

J

TJ = 25°C

= 125°C

T

J

= 25°C

T

J

µA

V

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

(Note 1a) 78
(Note 1c) 135

(Note 1) 40

FDFS2P103A

°C/W
°C/W
°C/W

a) 78°C/W when

mounted on a

0.5in2 pad of 2
oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

b) 125°C/W when

mounted on a

0.02 in2 pad of
2 oz copper

c) 135°C/W when

mounted on a
minimum pad.

FDFS2P103A Rev C (W)

)

E

E

)

)

Typical Characteristics

FDFS2P103A

20

VGS = -10V

16

-6.0V

12

8

4

, DRAIN-SOURCE CURRENT (A

D

-I

0

012345

-5.0V

-4.5V

-V

, DRAIN-SOURCE VOL TAGE ( V )

DS

-4.0V

-3.5V

-3.0V

5.00
VGS = -3.0V

4.00

3.00

, NORMALIZED

2.00

DS(ON)

R

1.00

DRAIN-SOURCE ON-RESISTANC

0.00

0 4 8 12 16

-3.5V

-4.0V

-4.5V

- I

, DRAIN CURRENT (A)

D

-5.0V

-6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

1.4

1.2

, NORMALIZED

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANC

0.6

ID = -5.3A

V

= -10V

GS

1

-50 0 50 100 150

T

, JUNCTION TEMPERATURE (oC)

J

0.22

0.16

TA = 125oC

0.1

, ON-RESISTANCE (OHM)

DS(ON)

R

0.04

TA = 25oC

0246810

-V

, GATE TO SOURCE V O LTAGE (V)

GS

-10V

ID = -2.65A

Figure 3. On-Resistance Variation with

Temperature.

10

VDS = -5V

8

6

4

, DRAIN CURRENT (A

D

-I

2

0

12345

125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

25oC

TA = -55oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

-V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDFS2P103A Rev C (W)

)

Typical Characteristics

FDFS2P103A

10

ID = -5.3A VDS = -10V

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

024681012

, GATE CHARGE (nC)

Q

g

-15V

-20V

800

600

C

iss

400

C

CAPACITANCE (pF)

200

C

0

rss

0 5 10 15 20

oss

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

10

1

0.1

0.01

, FORWARD LEAKAGE CURRENT (A)

F

I

0.001
0 0.1 0.2 0.3 0.4

TJ = 125oC

TJ = 25oC

VF, FORWARD VOLTAGE (V)

1

0.1

0.01

0.001

0.0001

0.00001

, REVERSE LEAKAGE CURRENT (A

R

I

0.000001
0 5 10 15 20 25 30

TJ = 125oC

TJ = 25oC

VR, REVERSE VOLTAGE (V)

f = 1MHz
V

= 0 V

GS

Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current.

1

D = 0.5

0.2

0.1

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.01

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) + R

JA

θ

R

= 135 °C/W

θJA

P(pk)

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

JA

θ

(t)

θJA

/ t

1

2

0.001 0.01 0.1 1 10 100 1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDFS2P103A Rev C (W)

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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I1