Datasheet FDFS2P103 Datasheet (Fairchild Semiconductor)

September 2001

FDFS2P103

Integrated P-Channel PowerTrench



MOSFET and Schottky Diode

FDFS2P103

General Description

The FDFS2P103 combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier recti fier in an SO-8 package.

This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on­state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.

D

D

C

C

SO-8

Pin 1

A

Absolute Maximum Ratings T

G

S

A

o

=25

C unless otherwise noted

A

Features

• –5.3 A, –30V R
R

• V

< 0.52 V @ 1 A (TJ = 125°C)

F

V

< 0.57 V @ 1 A (TJ = 25°C)

F

• Schottky and MOSFET incorporated into single
power surface mount SO-8 package

• Electrically independent S chottky and MOSFET
pinout for design flexibility

A
A
S

G

= 59 mΩ @ VGS = –10 V

DS(ON)

= 92 mΩ @ VGS = –4.5 V

DS(ON)

81
72
63

54

C
C
D
D

Symbol Parameter Ratings Units

V

MOSFET Drain-Source Voltage

DSS

V

MOSFET Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a)
– Pulsed
PD

TJ, T

STG

V

Schottky Repetiti ve P eak Reverse Voltage 30 V

RRM

IO Schottky Average Forward Current (Note 1a) 1 A

Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)

Operating and Storage Junction Temperature Range

(Note 1c)

–30

±25

–5.3

–20

1

0.9

–55 to +150

V
V
A

W

°C

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDFS2P103 FDFS2P103 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation

FDFS2P103 Rev C(W)

FDFS2P103

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –25 V, VDS = 0 V –100 nA

= 0 V, ID = –250 µA

V

GS

I

= –250 µA,Referenced to 25°C

D

–30 V

–23

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –10 V, VDS = –5 V –20 A

D(on)

= VGS, ID = –250 µA

V

DS

= –250 µA,Referenced to 25°C

I

D

VGS = –10 V, ID = –5.3 A

= –4.5 V, ID = –4 A

V

GS

=–10 V, ID =–5.3A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5V, ID = –5.3 A 10 S

–1 –1.7 –3 V

4.5

46
70
63

59
92
88

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 528 pF

iss

C

Output Capacitance 132 pF

oss

C

Reverse Transfer Capacitance

rss

= –15 V, VGS = 0 V,

V

DS

f = 1.0 MHz

70 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 7 14 ns

d(on)

tr Turn–On Rise Time 13 24 ns
t

Turn–Off Delay Time 14 25 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 5.3 8 nC
Qgs Gate–Source Charge 2.2 nC
Qgd Gate–Drain Charge

= –15 V, ID = –1 A,

V

DD

= –10 V, R

V

GS

= –15 V, ID = –5.3 A,

V

DS

V

= –5 V

GS

GEN

= 6 Ω

9 17 ns

1.6 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD

Drain–Source Diode Forward
Voltage

V

= 0 V, IS = –1.3 A (Note 2)

GS

–0.7 –1.2 V

Schottky Diode Characteristics

IR Reverse Leakage VR = 30 V

VF Forward Voltage IF = 1A

= 25°C

T

J

= 125°C

T

J

= 25°C

T

J

= 125°C

T

J

15 100

µA

6 30 mA

0.41 0.57 V

0.32 0.52 V

FDFS2P103 Rev C(W)

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

(Note 1a) 78
(Note 1c) 135

(Note 1) 40

FDFS2P103

°C/W
°C/W
°C/W

a) 78°C/W when

mounted on a

0.5in2 pad of 2
oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

b) 125°C/W when

mounted on a

0.02 in2 pad of
2 oz copper

c) 135°C/W when

mounted on a
minimum pad.

FDFS2P103 Rev C(W)

E

Typical Characteristics

FDFS2P103

30

VGS = -10V

20

10

, DRAIN CURRENT (A)

D

-I

0

0123456

-6.0V

-5.0V

-4.5V

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

-4.0V

-3.5V

-3.0V

2

1.8
VGS=-4.0V

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANC

0.8

0 6 12 18 24 30

-4.5V

-5.0V

, DRAIN CURRENT (A)

-I

D

-6.0V

-7.0V

-8.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = -5.3A

V

= -10V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

T

, JUNCTION TEMPERATURE (oC)

J

0.25

0.2

0.15

0.1

, ON-RESISTANCE (OHM)

TA = 25oC

0.05

DS(ON)

R

0

246810

TA = 125oC

, GATE TO SOURCE VOLTAGE (V )

-V

GS

-10V

ID = -2.8A

Figure 3. On-Resistance Variation with

Temperature.

15

VDS = -5V

12

9

6

, DRAIN CURRENT (A)

D

-I

3

0

11.522.533.544.5

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS =0 V

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

BODY DIODE FORWARD VOLTAGE (V)

-V

SD,

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDFS2P103 Rev C(W)

Typical Characteristics

FDFS2P103

10

ID = -5.3A

8

6

4

, GATE-SOURCE VOLTAGE (V)

2

GS

-V

0

0246810

, GATE CHARGE (nC)

Q

g

VDS = -10V

-15V

-20V

800

700

600

500

400

CAPACITANCE (pF)

300

200

100

0

C

C

RSS

0 5 10 15 20 25 30

C

ISS

OSS

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

10

1

0.1

0.01

, FORWARD LEAKAGE CURRENT (A)

F

I

0.001
0 0.1 0.2 0.3 0.4 0.5 0.6

TJ = 125oC

TJ = 25oC

VF, FORWARD VOLTAGE (V)

1.00E-01

1.00E-02

TJ = 125oC

1.00E-03

1.00E-04

TJ = 25oC

1.00E-05

1.00E-06

, REVERSE LEAKAGE CURRENT (A)

R

I

1.00E-07
0 10 20 30 40 50 60

VR, REVERSE VOLTAGE (V)

f = 1 MHz

= 0 V

V

GS

Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current.

1

D = 0.5

0.2

0.1

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.01

0.001 0.01 0.1 1 10 100 1000

0.1

0.05

0.02

0.01

SINGLE PULSE

, TIM E (s ec )

t

1

R

(t) = r(t) * R

θJA

R

= 135 °C/W

JA

θ

P(pk)

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDFS2P103 Rev C(W)

θJA

(t)

JA

θ

/ t

1

2

SOIC-8 Tape and Reel Data

SOIC(8lds) Packag

ing

Configuration: Figure 1.0

N

N

IO

IO

NT

NT

ONS

ONS

TE

TE

T

T

AUTI

AUTI

A

A

EC

EC

R

R

VE P

VE P

ER

ER

BS

BS

NG

NG

O

O

ANDLI

ANDLI

H

H

C

C

FOR

FOR

ATI

ATI

ST

ST

TRO

TRO

C

C

ELE

ELE

VE

VE

ITI

ITI

S

S

EN

EN

S

S

ES

ES

C

C

DEVI

DEVI

Customized
Label

SOIC (8lds) Packaging Information

b

e/Bag

Standard

(no flow code)

13” Dia

Pac ka gi ng Option

Pac ka gi ng type

Qty per Reel/Tu

Reel Si ze

Box Dimension (mm) 355x333x40 530x130x83 355x333x40

Max qty per Box 5,000 30,000 8,000

Weight per unit (gm) 0.0774 0.0774 0.0774 0.0774

Wei ght p er Reel (kg) 0.6060 - 0.9696 0.1182

L86Z F011

TNR

Rail/Tube-TNR

2,500 95 4,000

Note/Comments

Embossed ESD Marking

Static Dissipative

Embossed Carrier Tape

F63TNR
Label

13” Dia

193x183x80

ATTENTION

ATTENTION

ATTENTION

UTIONS

UTIONS

UTIONS

OBSERVE PRECA

OBSERVE PRECA

OBSERVE PRECA

FOR HANDLING

FOR HANDLING

FOR HANDLING

ELECTROSTATIC

ELECTROSTATIC

ELECTROSTATIC

SENSITIVE

SENSITIVE

SENSITIVE

DEVICES

DEVICES

DEVICES

Antistatic Cover Tape

D84Z

TNR

500

7” Dia

2,000

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (car
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13” or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 500 units per 7” or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.

These full reels are individually barcode labeled and
placed inside a s
figure 1.0) made of
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes i

n different sizes depending on the num

shipped.

F

NDS

9959

852

9959

NDS

F

852

SOIC-8 Unit Orientation

bon filled) polycarbonate

tandard intermediate box (illustrated in

recyclable corrugated brown paper.

ber of par ts

9959

852

852

F

NDS

9959

F

NDS

Barcode Label

F

NDS
9959

852

Pin 1

Barcode
Label

193mm x 183mm x 80mm

Pizza Box for Standard Option

SO

IC(8lds) Tape Leader and Trailer

Configuration: Figure 2.0

Carrier Tape

Cover Tape

Tr ai l e r Ta pe
640mm minimum or
80 empty pockets

©2001 Fairchild Semiconductor Corporation

355mm x 333mm x 40mm

Intermediate container for 13” reel option

Barcode Label sample

LOT: CBVK741B019

CBVK741B019

FSID: FDS9953A

FDS9953A

D/C1: Z9842AB QTY1: SPEC REV:
D/C2: QTY2: CPN:

F

AIRCHILD SEMICONDUCTOR CORPORATION (F63T

Components

QTY: 2500

3000

SPEC:

NR)

Leader Tape
1680mm minimum o r
210 empty pockets

Barcode
Label

June 2001, Rev. C1

SOIC-8 Tape and Reel Data, continued

SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0

T

K0

Wc

B0

P0

D0

E1

F

W

E2

Tc

A0

P1

D1

User Direction of Feed

Dimensions are in millimeter

Pkg type

(8lds )

SOIC

(12mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SOIC(8lds) Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

5.30

6.50

12.0

1.55

1.60

1.75

10.25

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.10

+/-0.10

rotational and lateral movement requi rements (see sketches A, B, and C).

B0

20 deg maximum component rotation

Sketch A (Side or Fro nt Sectional View)

Component R otation

5.50

min

+/-0.05

20 deg maxi mum

A0

Sketch B (Top View)

Component R otation

W1 Measured at Hub

8.0
+/-0.1

Typic al
component
cavity
center line

Typic al
component
center line

Dim A

Max

4.0
+/-0.1

0.450

2.1
+/-0.10

0.5mm
maximum

Sketch C (Top View)

Component la teral movement

+/-

0.150

9.2
+/-0.3

0.5mm
maximum

0.06
+/-0.02

Dim A

max

Tape Size

12mm 7" Dia

12mm 13 " Dia

ã 1998 Fairchild Semiconductor Corporation

Reel

Option

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

Dim D

W3

min

DETAIL AA

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00
330

1.5

0.059

1.5

512 +0. 020/-0.008
13 +0.5/-0.2

512 +0. 020/-0.008
13 +0.5/-0.2

0.795

2.165550.488 +0.078/-0.000

20.2

0.795

7.00

20.2

178

12.4 +2/0

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.724

18.4

0.469 – 0.606

11.9 – 15.4

0.469 – 0.606

11.9 – 15.4

January 2001, Rev. C

SOIC-8 Package Dimensions

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Di m ens ions s h ow n be l ow are i n :

inches [m illimet ers]

Part Weight per unit (gram): 0.0774

9

©2000 Fairchild Semiconductor International

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4