Datasheet FDC8601 Datasheet (Fairchild)

FDC8601

SuperSOTTM -6

G

S

D

D

D

D

Pin 1

1

2

3

6

5

4

D

D

G

D

D

S

N-Channel Power Trench® MOSFET

100 V, 2.7 A, 109 mΩ

Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 Fast switching speed
 100% UIL Tested
 RoHS Compliant

= 109 mΩ at VGS = 10 V, ID = 2.7 A

DS(on)

= 176 mΩ at VGS = 6 V, ID = 2.1 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness.

Applications

 Load Switch
 Synchronous Rectifier
 Primary Switch

June 2010

®

process that has

r

, switching performance and

DS(on)

FDC8601 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 2.7

-Pulsed 12
Single Pulse Avalanche Energy (Note 3) 13 mJ
Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.8
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 30
Thermal Resistance, Junction to Ambient (Note 1a) 78

.861 FDC8601 SSOT-6 7 ’’ 8 mm 3000 units

= 25 °C unless otherwise noted

A

1

A

W

°C/W

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FDC8601 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 70 mV/°C

I

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.0 4.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 10 V, ID = 2.7 A 5 S

I

= 250 μA, referenced to 25 °C -8 mV/°C

D

V

= 10 V, ID = 2.7 A 86 109

GS

= 6 V, ID = 2.1 A 119 176

GS

= 10 V, ID = 2.7 A, TJ = 125 °C 144 183

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 46 65 pF
Reverse Transfer Capacitance 2.2 5 pF

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

155 210 pF

Gate Resistance 0.9 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.3 10 ns
Turn-Off Delay Time 7.6 16 ns

= 50 V, ID = 2.7 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 2 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 0.9 nC

= 0 V to 5 V 1.7 3 nC

GS

V

DD

I

= 2.7 A

D

= 50 V

Gate to Drain “Miller” Charge 0.8 nC

4.5 10 ns

3 5 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

is guaranteed by design while R

R

θJC

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting T

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 21 34 nC

is determined by the user's board design.

θCA

= 25 oC, L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.

J

GS

= 2.7 A, di/dt = 100 A/μs

I

F

a. 78 °C/W when mounted on

2

pad of 2 oz copper

a 1 in

= 0 V, IS = 2.7 A (Note 2) 0.85 1.3 V

34 54 ns

b.175 °C/W when mounted on
a minimum pad of 2 oz copper

2

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FDC8601 N-Channel Power Trench

012345

0

3

6

9

12

VGS = 6.5 V

VGS = 5.5 V

VGS = 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 6 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

036912

0

1

2

3

4

5

VGS = 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 6 V

VGS = 6.5 V

VGS = 5.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 2.7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TE MPERATURE (

o

C)

45678910

0

100

200

300

400

500

TJ = 125 oC

ID = 2.7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

2345678

0

3

6

9

12

TJ = 25 oC

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On-Res istance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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FDC8601 N-Channel Power Trench

01234

0

2

4

6

8

10

ID = 2.7 A

VDD = 50 V

V

DD

= 25 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 75 V

0.1 1 10 100

1

10

100

300

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VO LTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 2

1

2

3

4

5

6

7

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V

GS

= 6 V

R

θJA

= 78 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, Ambient TEMPERATURE (

o

C)

0.1 1 10 100 400

0.001

0.01

0.1

1

10

20

10 s

100 us

10 ms

DC

1 s

100 ms

1 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 175

o

C/W

T

A

= 25

o

C

10-410-310-210-1110

100 1000

0.5

1

10

100

300

SINGLE PULSE
R

θJA

= 175

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C

Figure 11.

Operating Area

Forward Bias Safe

Figure 10.

Max i mum C o ntin u ous Dra i n

Cu rren t vs A mbie nt Tempe ratu re

Figure 12.

Si ngl e Pu lse Max imu m

Power Dissipation

4

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FDC8601 N-Channel Power Trench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

2

SINGLE PULSE
R

θJA

= 175 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13. Juncton-to-Ambient Transient Thermal Resp on s e Curve

= 25 °C unless otherwise noted

J

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C

5

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FDC8601 N-Channel Power Trench

Dimensional Outline and Pad Layout

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev. C

6

www.fairchildsemi.com

Preliminary Datasheet

®

tm

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FDC8601 N-Channel Power Trench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

©2010 Fairchild Semiconductor Corporation
FDC8601 Rev.C

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

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Rev. I48