Datasheet FDC655BN Datasheet (Fairchild)

Page 1

FDC655BN

Single N-Channel, Logic Level, PowerTrench® MOSFET

30 V, 6.3 A, 25 mΩ Features

 Max r  Max r  Fast switching  Low gate charge  High performance trchnology for extremely low r  Termination is Lead-free and RoHS Compliant

= 25 mΩ at VGS = 10 V, ID = 6.3 A

DS(on)

= 33 mΩ at VGS = 4.5 V, ID = 5.5 A

DS(on)

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applicatoins where low in-line power loss and fast switching are required.

FDC655BN Single N-Channel, Logic Level, PowerTrench

January 2010

Trench® process

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage ±20 V

-Continuous TA = 25°C (Note 1a) 6.3

-Pulsed 20 Power Dissipation ( Note 1a) 1.6 Power Dissipation (Note 1b) 0.8 Operating and Storage Junction Temperature Range -55 to + 150 °C

= 25°C unless otherwise noted

Thermal Characteristics

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 78 °C/W

Package Marking and Ordering Information

MOSFET

Device Marking Device Package Reel Size Tape Width Quantity

.55B FDC655BN SSOT-6

7 ’’ 8 mm 3000 units

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Page 2

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV ∆T

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage I Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V Gate to Source Leakage Current V

= 250 µA, VGS = 0 V30 V

= 250 µA, referenced to 25°C 25 mV/°C

= 24 V, V

= ±20 V, V

= 0 V1µA

= 0 V ±100nA

On Characteristics

GS(th)

∆V ∆T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, I Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

= 250 µA, referenced to 25°C -5 mV/°C

= 10 V, ID = 6.3 A 21 25

= 4.5 V, ID = 5.5 A2633

= 10 V, ID = 6.3 A, T

= 10 V, ID = 6.3 A35S

= 250 µA11.93V

= 125°C 30 36

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 100 130 pF Reverse Transfer Capacitance 60 90 pF

= 15 V, VGS = 0 V,

f = 1MHz

Gate Resistance 3.0 Ω

470 620 pF

FDC655BN Single N-Channel, Logic Level, PowerTrench

mΩV

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 210ns Turn-Off Delay Time 15 26 ns

= 15 V, ID = 1 A,

= 10 V, R

GEN

= 6 Ω

611ns

Fall Time 210ns Total Gate Charge V Total Gate Charge V Gate to Source Charge 1.4 nC

= 0 V to 10 V

= 0 V to 5 V57nC

= 6.3 A

= 15 V,

913nC

Gate to Drain “Miller” Charge 1.6 nC

Drain-Source Diode Characteristics

Notes:

1: R

θJA

θJC

a. 78 b. 156 °C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width<300 us, Duty Cycle<2.0%.

Maximum Continuous Drain-Source Diode Forward Current 1.3 A Source-Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 4 10 nC

is the sum of the junction-to-case and ca se-to-ambient thermal resistan ce where the case th ermal reference is defined as t he solder mountin g surface of the d rain pins. is guaranteed by design while R

°C/W when mounted on a 1 in2 pad of 2 oz copper on FR-4 boar d.

is determined by the user’s board design.

θCA

= 0 V, IS = 1.3 A (Note 2) 0.8 1.2 V

= 6.3 A, di/dt = 100 A/µs

15 26 ns

MOSFET

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Page 3

FDC655BN Single N-Channel, Logic Level, PowerTrench

Typical Characteristics T

, DRAIN CURRENT (A)

0 0.5 1.0 1.5 2.0

Figure 1.

1.6

ID = 6.3 A

= 10 V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

VGS = 10 V VGS = 6 V VGS = 4.5 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

, JUNCTION TEMPERATURE (

= 25°C unless otherwise noted

VGS = 3.5 V

VGS = 3 V

PULSE DURATION = 80 µs

VGS = 3 V

DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

048121620

VGS = 6 V

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 10 V

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

90 80

(mΩ)

70 60 50

DRAIN TO

DS(on)

30 20

SOURCE ON-RESISTANCE

246810

, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 6.3 A

TJ = 125 oC

TJ = 25 oC

MOSFET

Fi g ure 3 . Norm a lize d On Re s ista n ce

vs Junction Temperature

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 5 V

, DRAIN CURRENT (A)

1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 150 oC

Figure 5. Transfer Characteristics

Figure 4.

On-Resista nce vs Gate to

Source Voltage

100

= 0 V

TJ = 25 oC

TJ = -55 oC

0.1

, REVERSE DRAIN CURRENT (A)

0.01

0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Dr ain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

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Page 4

FDC655BN Single N-Channel, Logic Level, PowerTrench

Typical Characteristics T

= 25°C unless otherwise noted

ID = 6.3 A

VDD = 10 V

VDD = 20 V

, GATE TO SOURCE VOLTAGE (V)

0246810

Figure 7.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

100

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

, DRAIN CURRENT (A)

0.1

0.01

0.01 0.1 1 10 100

= MAX RATED

R T

= 156

C/W

θJA

= 25

VDS, DRAIN to SOURCE VOLTAGE (V)

1000

iss

= 15 V

100

CAPACITANCE (pF)

f = 1 MHz V

= 0 V

0.1 1 10 30

VDS, DRAIN TO SOURCE VOL TAGE (V)

oss

rss

Capacitance vs Drain

to Source Voltage

1000

VGS = 10 V

t, PULSE WIDTH (sec)

SINGLE PULSE

= 156 oC/W

= 25 oC

100 1000

MOSFET

1 ms

10 ms

100 ms 1 s

10 s

100

PEAK TRANSIENT POWER (W)

)

(

0.1 10-410-310-210-1110

Figure 9. Forward Bias Safe

Operating Area

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

θJA

0.1

0.05

0.02

0.01

IMPEDANCE,

NORMALIZED THERMAL

0.001

0.0003

-4

Figure 11.

Figure 10.

Power Dissipation

-3

SINGLE PULSE

= 156 oC/W

θJA

-2

-1

t, RECTANGULAR PULSE DURATION (sec)

110

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

Junction-to-Ambient Transient Thermal Response Curve

Single Pulse Maximum

x R

+ T

θJA

100 1000

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Page 5

TRADEMARKS

The following includes registered and unregistered trademarks a nd service marks, owned by Fairch ild Semiconduct or and/or its global sub sidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™

® ®

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PDP SPM™ Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™

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Sync-Lock™

®* The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™*

µSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDC655BN Single N-Channel, Logic Level, PowerTrench

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manuf actures of semiconductor produ cts are experiencing counterfeiti ng of their

parts. Customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputat ion, su bstandard pe rformance, faile d application, and increased cost of production and manufacturing delays. Fairchil d is taking st ron g measures to protect ourselve s and our custo mers from the proliferation of counterfeit parts. Fairchild str ongly encourages customers t o purchase Fairchild par ts either d irectly from Fairchild o r from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fair child’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping t his practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specificatio ns for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserve s the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I46