Datasheet FDC6327C Datasheet (Fairchild Semiconductor)

FDC6327C

Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET

FDC6327C

July 2000

General Description

These N & P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low gate
charge for superior switching performance.

These devices have been designed to offer exceptional power
dissipation in a very small footprint for applications where
the bigger more expensive SO-8 and TSSOP-8 packages
are impractical.

Applications

• DC/DC converter

• Load switch

• Motor driving

D2

S1

D1

G2

SuperSOT -6

TM

S2

G1

Features

• N-Channel 2.7A, 20V . R

R

• P-Channel -1.6A, -20V .R

R

= 0.08Ω @ V

DS(on)

= 0.12Ω @ V

DS(on)

= 0.17Ω @ V

DS(on)

= 0.25Ω @ V

DS(on)

= 4.5V

GS

= 2.5V

GS

= -4.5V

GS

= -2.5V

GS

• Fast switching speed.

• Low gate charge.

• High performance trench technology for extremely

low R

• SuperSOT

than SO-8); low profile (1mm thick).

.

DS(ON)

TM

-6 package: small footprint (72% smaller

4

5

6

3

2

1

Absolute Maximum Ratings

TA = 25°C unless otherwise noted

Symbol Parameter N-Channel P-Channel Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 20 -20 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed 8 -8

Power Dissipation

Operating and Storage Junction Temperat ure Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

(Note 1c)

8

±

2.7 -1.9 A

0.96 W

0.9

0.7

8V

±

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

130

60

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.327 FDC6327C 7” 8mm 3000

1999 Fairchild Semiconductor Corporation

C

°

C/W

°

C/W

°

FDC6327C, Rev. E

FDC6327C

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions TypeMin TypMax Units

Off Characteristics

BV

Drain-Source Breakdown

DSS

Voltage

BV

∆
∆

I

DSS

Breakdown Voltage

DSS

Temperature Coefficient

T

J

Zero Gate Voltage Drain
Current

I

GSSF

I

GSSR

Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V All 100 nA
Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V All -100 nA

On Characteristics

V

GS(th)

GS(th)

V

∆
∆

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage VDS = VGS, ID = 250 µA

Gate Threshold Voltage
Temperature Coefficient

T

J

Static Drain-Source
On-Resistance

On-State Drain Current VGS = 4.5 V, VDS = 5 V

Forward Transconductance VDS = 5 V, ID = 2.7 A

(Note 2)

VGS = 0 V, ID = 250 µA

= 0 V, ID = - 250 µA

V

GS

ID = 250 µA, Referenced to 25°C

= - 250 µA, Referenced to 25°C

I

D

VDS = 16 V, VGS = 0 V
V

= -16 V, VGS = 0 V

DS

= VGS, ID = -250 µA

V

DS

ID = 250 µA, Referenced to 25°C

= - 250 µA, Referenced to 25°C

I

D

VGS = 4.5 V, ID = 2.7 A
V

= 4.5 V, ID = 2.7 A, TJ = 125°C

GS

= 2.5 V, ID = 2.2 A

V

GS

V

= -4.5 V, ID = -1.6 A

GS

V

= -4.5 V, ID = -1.6 A, TJ = 125°C

GS

= -2.5 V, ID = -1.3 A

V

GS

V

= -4.5 V, VDS = -5 V

GS

V

= -5 V, ID = -1.9 A

DS

N-Ch
P-Ch20-20

N-Ch
P-Ch

N-Ch
P-Ch

N-Ch
P-Ch

0.4

-0.4

N-Ch
P-Ch

N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch

N-Ch
P-Ch8-8
N-Ch
P-Ch

12

-19

0.9

-0.9

-2.1

2.3

0.069

0.094

0.093

0.141

0.203

0.205

7.7

4.5

1.5

-1.5

0.08

0.13

0.12

0.17

0.27

0.25

V

mV/°C

1

A

µ

-1

V

mV/°C

Ω

A

S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance N-Ch

Output Capacitance N-Ch

Reverse Transfer Capacitance

N-Channel
V

= 10 V, VGS = 0 V, f = 1.0 MHz

DS

P-Channel
V

= 10 V, VGS = 0 V, f = 1.0 MHz

DS

P-Ch

P-Ch
N-Ch
P-Ch

325
315

75
65
35
24

pF

pF

pF

FDC6327C, Rev. E

FDC6327C

yp

Electrical Characteristics

(continued)

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min T

(Note 2)

Switching Characteristics

t

t

t

t

Q

Q

Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time N-Ch

Turn-On Rise Time N-Ch

Turn-Off Delay Time N-Ch

Turn-Off Fall Time

Total Gate Charge N-Ch

Gate-Source Charge N-Ch

Gate-Drain Charge

N-Channel
V

= 10 V, ID = 1 A,

DD

= 4.5V, R

V

GS

GEN

= 6

Ω

P-Channel

= -10 V, ID = -1 A,

V

DD

V

= -4.5 V, R

GS

GEN

= 6

Ω

N-Channel
V

= 10 V, ID = 2.7 A, VGS = 4.5V

DS

P-Channel
V

= -10 V, I

= -1.9 A,V

= -4.5V

P-Ch

P-Ch

P-Ch
N-Ch
P-Ch

P-Ch

P-Ch
N-Ch
P-Ch

5
7

9
14
12
14

3

3

3.25

2.85

0.65

0.68

0.90

0.65

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

θJA

R

θJC

equally.

Maximum Continuous Drain-Source Diode Forward Current N-Ch

P-Ch
Drain-Source Diode Forward
Voltage

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R

is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy

θJA

VGS = 0 V, IS = 0.8 A
VGS = 0 V, IS = - 0.8 A

(Note 2)

(Note 2)

N-Ch

P-Ch

0.76

-0.79

Max Units

1514ns

1825ns

2225ns

9

ns

9

4.5

nC

4.0
nC

nC

0.8

-0.8

1.2

-1.2

A

V

a) 130 °C/W when

mounted on a 0.125 in
pad of 2 oz. copper.

Scale 1 : 1 on letter size paper
2: Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

2

b) 140 °C/W when

mounted on a 0.005 in
pad of 2 oz. copper.

2

c) 180 °C/W when

mounted on a 0.0015 in
pad of 2 oz. copper.

2

FDC6327C, Rev. E

Typical Characteristics: N-Channel

FDC6327C

10

VGS = 4.5V

3.0V

8

6

4

2

0

01234

2.5V

2.0V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

1.5V

2.4

2.2
2

1.8

1.6

1.4

1.2

0.8

VGS = 2.0V

2.5V

3.0V

1

0246810

, DRAIN CURRENT (A)

I

D

3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation

with Drain Current and Gate V olt age.

1.6
ID = 2.7A

1.5
V

= 4.5V

GS

1.4

1.3

1.2

1.1

1

ON-RESISTANCE

0.9

, NORMALIZED DRAIN-SOURCE

0.8

DS(ON)

R

0.7

-50-25 0 255075100125150

, JUNCTION TEMPERATURE (oC)

T

J

0.25

0.2

0.15

0.1

0.05

0

12345

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

TA = 25oC

4.5V

ID = 1.3A

Figure 3. On-Resistance V ariation

with Temperature.

10

VDS = 5V

8

6

4

2

0

01234

V

GS

TA = -55oC

, GATE TO SOURCE VOLTAGE (V)

25oC

125oC

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance V ariation

with Gate-to-Source V oltage.

10

VGS = 0V

1

0.1

0.01

0.001

0.0001

TA = 125oC

00.40.81.21.6

V

SD

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Volt age

Variation with Source Current

and Temperature.

FDC6327C, Rev. E

Typical Characteristics: N-Channel (continued)

FDC6327C

5

ID = 2.7A VDS = 5V

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

V

0

00.511.522.533.54

, GATE CHARGE (nC)

Q

g

10V

15V

Figure 7. Gate-Charge Characteristics.

10

R

LIMIT

DS(ON)

1

0.1
VGS = 4.5V

SINGLE PULSE
R

= 180oC/W

JA

θ

= 25oC

T

0.01

A

0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

V

DS

100ms

1s

DC

100µs

1ms

10ms

500

400

300

200

100

0

0 4 8 121620

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

C

C

C

f = 1MHz
V

= 0 V

GS

ISS

OSS
RSS

Figure 8. Capacitance Characteristics.

5

4

3

2

1

0

0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)

SINGLE PULSE

= 180oC/W

R

JA

θ

T

= 25oC

A

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

FDC6327C, Rev. E

Typical Characteristics: P-Channel

FDC6327C

10

8

6

4

2

0

012345

VGS = -4.5V

-3.5V

-3.0V

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

-2.5V

-2.0V

-1.5V

2.4

2.2
VGS = -2.0V

2

1.8

1.6

1.4

1.2

1

0.8

0246810

-2.5V

-3.0V

, DIRAIN CURRENT (A)

-I

D

-3.5V

-4.0V

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation

with Drain Current and Gate V olt age.

1.5
ID = -1.9A

1.4

= -4.5V

V

GS

1.3

1.2

1.1

1

0.9

0.8

0.7

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.5

0.4

0.3

0.2

0.1

0

12345

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = 125oC

TA = 25oC

-4.5V

ID = -1A

Figure 13. On-Resistance V ariation

with Temperature.

10

VDS = -5V

8

6

4

2

0

01234

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = -55oC

25oC

125oC

Figure 15. Transfer Characteristics.

Figure 14. On-Resistance V ariation

with Gate-to-Source V oltage.

10

VGS = 0V

1

0.1

0.01

0.001

0.0001
0 0.4 0.8 1.2 1.6

TA = 125oC

25oC

-55oC

BODY DIODE FORWARD VOLTAGE (V)

-V

SD,

Figure 16. Body Diode Forward Volt age

Variation with Source Current

and Temperature.

FDC6327C, Rev. E

Typical Characteristics: P-Channel (continued)

FDC6327C

5

ID = -1.9A

4

3

2

1

0

0 0.5 1 1.5 2 2.5 3 3.5

, GATE CHARGE (nC)

Q

g

VDS = -5.0V

-15V

Figure 17. Gate-Charge Characteristics.

10

R

LIMIT

DS(ON)

1

0.1
VGS = -4.5V

SINGLE PULSE

= 180oC/W

R

JA

θ

T

= 25oC

0.01

A

0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

100ms

1s

DC

100µs

1ms

10ms

-10V

450
400
350
300
250
200
150
100

50

0

0 4 8 121620

-V

C

ISS

C

OSS

, DRAIN TO SOURCE VOLTAGE (V)

DS

f = 1 MHz

= 0 V

V

GS

C

RSS

Figure 18. Capacitance Characteristics.

5

4

3

2

1

0

0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)

SINGLE PULSE

= 180oC/W

R

JA

θ

T

= 25oC

A

Figure 19. Maximum Safe Operating Area.

Figure 20. Single Pulse Maximum

Power Dissipation.

FDC6327C, Rev. E

Typical Characteristics: N & P-Channel (continued)

1

D = 0.5

0.5

0.2

0.2

0.1

0.1

0.05

r(t), NORMALIZED EFFECTIVE

0.02

TRANSIENT THERMAL RESISTANCE

0.01

0.05

0.02

0.01
Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 300
t , TIME (sec)

1

Figure 21. Transient Thermal Response Curve.

R (t) = r(t) * R

θ

JA

R = 180°C/W

θ

JA

P(pk)

t

1

t

T - T = P * R (t)

J

A

Duty Cycle, D = t / t

FDC6327C

θ

JA

2

JA

θ

2

1

FDC6327C, Rev. E

g

y

y

g

SuperSOTTM-6 Tape and Reel Data and Package Dimensions

SSOT-6 Packaging
Configuration:

Fi

ure 1.0

SSOT-6 Packaging Information

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)

Note/Comments

Customize Label

Stan dard

(no flow c ode )

184x187x47 343x343x64

0.0158 0.0158

0.1440 0.4700

D87Z

TNR
3,000 10,000
7" Dia

9,000 30,000

TNR

13"

Antistatic Cover Tape

F63TNR
Label

Packaging Description:

SSOT-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni ts p er 7 " or 17 7cm di amet er re el. The reels are
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 10,000 units per 13"
or 330cm diam eter reel. T his a nd some othe r opti ons ar e
described in the Packaging Information table.

These full reels are individually barcode labeled and
placed inside a pizza box (illustrate d in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printi ng. One pizza box contain s three r eels maximu m.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes

Embo ssed

Carrier Tape

depending on the number of parts shipped.

631

SSOT-6 Unit Orientation

343mm x 342mm x 64mm

Intermediate box for D87Z Opti on

631

631631

631

Pin 1

F63TNR Label

184mm x 187mm x 47mm

Pizza Box for Standard Option

SSOT-6 Tape Leader and Trailer
Configuration:

Carrier Tape

Cover Tape

1998 Fairchild Semiconductor Corporation

ure 2.0

Fi

Tr ailer Tape
300mm mi nimum or
75 empt

F63TNR
Label

F63TNR
Label

pock ets

Component s

F63TNR Label sampl e

LOT: CBVK7 41B019

FSID: FDC633N

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 3000

SPEC:

N/F: F (F63TNR)3

Leader Tape
500mm mi nimum or
125 empt

pock ets

August 1999, Rev. C

g

g

SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued

SSOT-6 Embossed Carrier Tape
Configuration:

T

K0

Wc

Fi

B0

ure 3.0

P0

D0

E1

F

W

E2

Tc

A0

P1

D1

User Direction of Feed

Dimensions are in millimeter

Pkg type

SSOT-6

(8mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SSOT-6 Reel Configuration:

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

3.23

3.18

8.0

1.55

1.125

1.75

6.25

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.125

+/-0.10

rotational and lateral movement requirements (see sketches A, B, and C).

B0

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

Fi

ure 4.0

3.50

min

+/-0.05

20 deg maximum

A0

Sketch B (Top View)

Component Rotation

W1 Measured at Hub

4.0
+/-0.1

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

4.0
+/-0.1

1.37

0.255
+/-0.150

5.2
+/-0.3

0.5mm
maximum

+/-0.10

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

0.06
+/-0.02

Dim A

max

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

W3

Dim D

min

DETAIL AA

Dimensions are in inches and millimeters

Tape Size

8mm 7" Dia

8mm 13" D ia

Reel

Option

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00
330

1.5

0.059

1.5

512 +0.020/-0.008
13 +0.5/-0.2

512 +0.020/-0.008
13 +0.5/-0.2

0.795

2.165550.331 +0.059/-0.000

20.2

0.795

4.00

20.2

100

8.4 +1.5/0

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.567

14.4

0.311 – 0.429

7.9 – 10.9

0.311 – 0.429

7.9 – 10.9

July 1999, Rev. C

SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued

SuperSOT -6 (FS PKG Code 31, 33)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0158

1998 Fairchild Semiconductor Corporation

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

®

FAST

FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench

®

QFET™
QS™
QT Optoelectronics™

Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. F1