Datasheet FDC6322C Datasheet (Fairchild Semiconductor)

November 1997

FDC6322C
Dual N & P Channel , Digital FET

General Description Features

These dual N & P Channel logic level enhancement mode field
effec transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
The device is an improved design especially for low voltage
applications as a replacement for bipolar digital transistors in
load switching applications. Since bias resistors are not
required, this dual digital FET can replace several digital
transistors with difference bias resistors.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

N-Ch 25 V, 0.22 A, R
P-Ch 25 V, -0.46 A, R

= 5 Ω @ VGS= 2.7 V.

DS(ON)

= 1.5 Ω @ VGS= -2.7 V.

DS(ON)

Very low level gate drive requirements allowing direct
operation in 3 V circuits. V

GS(th)

< 1.5 V.

Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model

Replace NPN & PNP digital transistors.

SO-8

SOT-223

SOIC-16

Mark: .322

4

5

6

Absolute Maximum Ratings T

Symbol Parameter N-Channel P-Channel Units

V

, VCCDrain-Source Voltage, Power Supply Voltage 25 -25 V

DSS

V

GSS

ID, I

P

D

TJ,T
ESD Electrostatic Discharge Rating MIL-STD-883D

THERMAL CHARACTERISTICS

R

θJA

R

θJC

Gate-Source Voltage, 8 -8 V

, V

IN

Drain/Output Current - Continuous 0.22 -0.46 A

O

Maximum Power Dissipation (Note 1a) 0.9 W
(Note 1b) 0.7
Operating and Storage Tempature Ranger -55 to 150 °C

STG

Human Body Model (100pf / 1500 Ohm)

Thermal Resistance, Junction-to-Ambient (Note 1a) 140 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W

= 25oC unless other wise noted

A

- Pulsed 0.5 -1

6 kV

3

2

1

© 1997 Fairchild Semiconductor Corporation

FDC6322C.Rev B1

DMOS Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions
OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 25 V

VGS = 0 V, ID = -250 µA

∆BV

DSS

Breakdown Voltage Temp. Coefficient ID= 250 µA, Referenced to 25 oC N-Ch 25 mV /oC

/∆T

J

ID = -250 µA, Referenced to 25 oC

I

DSS

I

DSS

I

GSS

Zero Gate Voltage Drain Current VDS= 20 V, VGS= 0 V, N-Ch 1 µ A

Zero Gate Voltage Drain Current

Gate - Body Leakage Current

VDS =-20 V, V

VGS = 8 V, VDS= 0 V
VGS = -8 V, VDS= 0 V P-Ch -100 nA

ON CHARACTERISTICS (Note 2)

∆V

GS(th)

Gate Threshold Voltage Temp. Coefficient

/∆T

J

ID = 250 µA, Referenced to 25 o C
ID= -250 µA, Referenced to 25 o C P-Ch 2.1

V

GS(th)

Gate Threshold Voltage

VDS = VGS, ID= 250 µA
VDS = VGS, ID= -250 µA P-Ch -0.65 -0.86 -1.5

R

DS(ON)

Static Drain-Source On-Resistance

VGS = 2.7 V, ID = 0.2 A

VGS = 4.5 V, ID = 0.4 A
VGS = -2.7 V, ID = -0.25 A

VGS = -4.5 V, ID = -0.5 A

I

D(ON)

On-State Drain Current

VGS = 2.7 V, VDS = 5 V
VGS = -2.7 V, VDS = -5 V

g

FS

Forward Transconductance

VDS = 5 V, ID= 0.4 A
VDS = -5 V, ID= -0.5 A

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance N-Channel N-Ch 9.5 pF

VDS= 10 V, VGS= 0 V,

C

oss

Output Capacitance f = 1.0 MHz N-Ch 6

P-Channel P-Ch 35

C

rss

Reverse Transfer Capacitance

VDS= -10 V, VGS = 0V,
f = 1.0 MHz P-Ch 9.5

GS

= 0 V,

Min Typ Max Units

Type

P-Ch -25

P-Ch -22

TJ = 55°C 10

P-Ch -1 µA

TJ = 55°C -10

N-Ch 100 nA

N-Ch -2.1

N-Ch 0.65 0.85 1.5 V

N-Ch 3.8 5

TJ =125°C

6.3 9

3.1 4

P-Ch 1.22 1.5

TJ =125°C

1.65 2.4

0.87 1.1
N-Ch 0.2 A
P-Ch -0.5
N-Ch 0.2 S
P-Ch 0.8

P-Ch 62

N-Ch 1.3

mV / oC

Ω

FDC6322C.Rev B1

SWITCHING CHARACTERISTICS (Note 2)
Symbol Parameter Conditions

t

D(on)

Turn - On Delay Time N-Channel N-Ch 5 10 nS

Type

Min Typ Max Units

VDD = 6 V, ID = 0.5 A, P-Ch 7 14

t

r

Turn - On Rise Time

VGs = 4.5 V, R

= 50 Ω

GEN

N-Ch 4.5 10 nS
P-Ch 8 16

t

D(off)

Turn - Off Delay Time P-Channel N-Ch 4 8 nS

VDD = -6 V, ID = -0.5 A, P-Ch 55 90

t

f

Turn - Off Fall Time

V

= -4.5 V, R

Gen

GEN

= 50 Ω

N-Ch 3.2 7 nS
P-Ch 35 55

Q

g

Q

gs

Total Gate Charge N-Channel N-Ch 0.49 0.7 nC

VDS= 5 V, ID = 0.2 A,

P-Ch 1 1.5

Gate-Source Charge VGS = 4.5 V N-Ch 0.22 nC

P- Channel P-Ch 0.32

Q

gd

Gate-Drain Charge

VDS = -5 V, ID = -0.25 A,
VGS = -4.5 V

N-Ch 0.07 nC
P-Ch 0.25

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current N-Ch 0.5 A

P-Ch -0.5

V

SD

Notes:

1. R
design while R

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A

VGS = 0 V, IS = -0.5 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

is determined by the user's board design. R

CA

θ

shown below for single device operation on FR-4 in still air.

JA

θ

(Note 2) N-Ch 0.97 1.3 V

(Note 2)

P-Ch -0.88 -1.2

is guaranteed by

JC

θ

a. 140OC/W on a 0.125 in2 pad of

2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

b. 180OC/W on a 0.005 in2 of pad

of 2oz copper.

FDC6322C.Rev B1

Typical Electrical Characteristics: N-Channel

0.5

0.4

0.3

0.2

0.1

D

I , DRAIN-SOURCE CURRENT (A)

0

0 0.5 1 1.5 2 2.5 3

V = 4.5V

GS

V , DRAIN-SOURCE VOLTAGE (V)

DS

4.0

3.5

3.0

2.7

2.5

2.0

1.5

1.4

V = 2.0V

GS

1.2

2.5

1

0.8

R DS(on) , NORMALIZED

2.7

3.0

DRAIN-SOURCE ON-RESISTANCE

0.6
0 0.1 0.2 0.3 0.4 0.5

I , DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

I = 0.2A

D

1.6

V = 2.7 V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

15

12

25°C

9

6

3

DS(on)

R , ON-RESISTANCE (OHM)

0

2 2.5 3 3.5 4

125°C

V , GATE TO SOURCE VOLTAGE (V)

GS

3.5

4.0

4.5

I = 0.2A

D

Figure 3. On-Resistance Variation

with Temperature.

0.2

V = 5.0V

DS

0.15

0.1

0.05

D

I , DRAIN CURRENT (A)

0

0.5 1 1.5 2 2.5
V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

Figure 5. Transfer Characteristics.

125°C

Figure 4. On Resistance Variation with

Gate-To- Source Voltage.

0.5

V = 0V

GS

0.2

0.1

0.01

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001

0.2 0.4 0.6 0.8 1 1.2
V , BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current and

T = 125°C

J

25°C

-55°C

SD

Temperature.

FDC6322C.Rev B1

Typical Electrical Characteristics: N-Channel (continued)

30

20

10

5

3

CAPACITANCE (pF)

f = 1 MHz

2

V = 0V

GS

1

0.1 0.5 1 2 5 10 25
V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

C

C

iss

oss

rss

Figure 7. Capacitance Characteristics.

1

0.5

0.2

RDS(ON) LIMIT

0.1

0.05

D

I , DRAIN CURRENT (A)

0.02

0.01

V = 2.7V

GS

SINGLE PULSE

R =See note 1b

JA

θ

T = 25°C

A

0.5 1 2 5 10 15 25 35
V , DRAI N-SOURCE VOLTAGE (V)

DS

100ms

1s

DC

1ms

10ms

5

I = 0.2A

D

4

3

2

1

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 0.1 0.2 0.3 0.4 0.5 0.6

Q , GATE CHARGE (nC)

g

V = 5V

DS

10V

15V

Figure 8. Gate Charge Characteristics.

5

4

3

2

POWER (W)

1

0

0.01 0.1 1 10 100 300
SINGLE PULSE TIME (SEC)

SINGLE PULSE

R =See note 1b

JA

θ

T = 25°C

A

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power

Dissipation.

FDC6322C.Rev B1

Typical Electrical Characteristics: P-Channel

-1.5

GS

V = -4.5V

-1.25

-1

-3.5

-3.0

-2.7

-2.5

-0.75

-0.5

-0.25

D

I , DRAIN-SOURCE CURRENT (A)

-2.0

-1.5

0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 11. On-Region Characteristics.

1.6

I = -0.25A

D

V = -2.7V

1.4

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

-1.6

V = -2.0 V

-1.4

GS

-1.2

-1

DS(on)

R , NORMALIZED

-0.8

DRAIN-SOURCE ON-RESISTANCE

-5-4-3-2-10

-0.6

-2.5

-2.7

-3.0

I , DRAIN CURRENT (A)

D

-3.5

-4.0

-4.5

-1-0.8-0.6-0.4-0.20

Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

5

25°C

4

3

2

1

DS(on)

R , ON-RESISTANCE (OHM)

0

125°C

V , GATE TO SOURCE VOLTAGE (V)

GS

I = -0.5A

D

-5-4.5-4-3.5-3-2.5-2-1.5-1

Figure 13. On-Resistance Variation

with Temperature.

-1

V = -5V

DS

-0.75

-0.5

-0.25

D

I , DRAIN CURRENT (A)

0

V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 15. Transfer Characteristics.

T = -55°C

J

25°C

125°C

Figure 14. On Resistance Variation with

0.5

V = 0V

GS

0.1

T = 125°C

J

25°C

0.01

S

-I , REVERSE DRAIN CURRENT (A)

-3-2.5-2-1.5-1-0.5

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 16. Body Diode Forward Voltage

Variation with Source Current and

Temperature.

FDC6322C.Rev B1

Typical Electrical Characteristics: P-Channel (continued)

5

I = -0.25A

D

4

3

2

1

GS

-V , GATE-SOURCE VOLTAGE (V)
0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Q , GATE CHARGE (nC)

g

V = 5V

DS

10V

15V

Figure 17. Gate Charge Characteristics.

150
100

60
40

20

f = 1 MHz

CAPACITANCE (pF)

V = 0 V

GS

10

5

0.1 0.2 0.5 1 2 5 10 25

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

iss

C

oss

C

rss

2

1

0.3

RDS(ON) LIMIT

0.1

D

-I , DRAIN CURRENT (A)

0.03

0.01

V = -2.7V

GS

SINGLE PULSE

R = See Note 1b

JA

θ

T = 25°C

A

A

0.1 0.2 0.5 1 2 5 10 15 25 35

- V , DRAIN-SOURCE VOLTAGE (V)

DS

10ms

100ms

1s

DC

Figure 18. Maximum Safe Operating Area.

5

4

3

2

POWER (W)

1

0

0.01 0.1 1 10 100 300
SINGLE PULSE TIME (SEC)

SINGLE PULSE

R =See note 1b

JA

θ

T = 25°C

A

1ms

Figure 19. Capacitance Characteristics.

Figure 20. Single Pulse Maximum Power

Dissipation.

1

D = 0.5

0.5

0.2

0.2

0.1

0.1

0.05

r(t), NORMALIZED EFFECTIVE

0.02

TRANSIENT THERMAL RESISTANCE

0.01

0.05

0.02

0.01
Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 300

Figure 21. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.

t , TIME (sec)

1

R (t) = r(t) * R

JA

θ

R = See Note 1b

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t / t

JA

θ

JA

θ

2

1

FDC6322C.Rev B1