Datasheet FDC6318P Datasheet (Fairchild Semiconductor)

December 2001

FDC6318P

Dual P-Channel 1.8V PowerTrench



Specified MOSFET

FDC6318P

General Description

These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Applications

• Power management

• Load switch

Features

• –2.5 A, –12 V. R

R

• High performance trench technology for extremely low R

• SuperSOT

smaller than standard SO-8); low profile (1mm thick)

DS(ON)

TM

-6 package: small footprint (72%

= 90 mΩ @ VGS = –4.5 V

DS(ON)

= 125 mΩ @ VGS = –2.5 V

DS(ON)

= 200 mΩ @ VGS = –1.8 V

DS(ON)

D2

D1

S1

4

5

3

2

G2

SuperSOT -6

TM

S2

G1

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

6

1

Symbol Parameter Ratings Units

V

Drain-Source Voltage –12 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –2.5 A

– Pulsed –7

PD

TJ, T

STG

Power Dissipation for Single Operation (Note 1a) 0.96

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

(Note 1c)

±8

0.9

0.7

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a) 130

(Note 1) 60

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2001 Fairchild Sem iconductor Corporation

.318 FDC6318P 13’’ 12mm 3000 units

°C/W

FDC6318P Rev D (W )

FDC6318P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆T

I

Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature Coefficient

J

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA

= 0 V, ID = –250 µA

V

GS

I

= –250 µA, Referenced to 25°C

D

–12 V

–2.9

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –6 A

D(on)

= VGS, ID = –250 µA

V

DS

= –250 µA, Referenced to 25°C

I

D

VGS = –4.5 V, ID = –2.5 A

= –2.5 V, ID = –2 A

V

GS

= –1.8 V, ID = –1.6 A

V

GS

= –4.5 V, ID = –2.5A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5 V, ID = –2.5 A 8 S

–0.4 –0.7 –1.5 V

2.3

69 93

135

85

90 125 200 120

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 455 pF

iss

C

Output Capacitance 194 pF

oss

C

Reverse Transfer Capacitance

rss

= –6 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

134 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 9 18 ns

d(on)

tr Turn–On Rise Time 14 25 ns

t

Turn–Off Delay Time 21 34 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 5.4 8 nC

Qgs Gate–Source Charge 1.1 nC

Qgd Gate–Drain Charge

= –6 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

= –6 V, ID = –2.5 A,

V

DS

V

= –4.5 V

GS

GEN

= 6 Ω

17 31 ns

1.3 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –0.8 A

VSD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Drain–Source Diode Forward Voltage

is guaranteed by design while R

θJC

a) 130 °C/W when

mounted on a 0.125

2

in

pad of 2 oz.

copper.

θCA

VGS = 0 V, IS = –0.8 A (Note 2) –0.7 –1.2 V

is determined by the user's board design.

b) 140°C/W when mounted

on a .004 in copper

2

pad of 2 oz

c) 180°C/W when mounted on a

mini mum pa d.

FDC6318P Rev D (W )

Typical Characteristics

FDC6318P

10

VGS=-4.5V

-3.0V

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

01234

-2.5V

-2.0V

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

-1.8V

-1.5V

2.2

V

= -1.8V

GS

2

1.8

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8 0246810

-2.0V

-I

, DRAIN CURRENT (A)

D

-2.5V

-3.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.3 ID = -2.5A

V

= -4.5V

GS

1.2

1.1

, NORMALIZED

1

DS(ON)

R

0.9

DRAIN-SOURCE ON-RESISTANCE

0.8

-50-25 0 255075100125150

T

, JUNCTION TEM PERATURE (oC)

J

0.26

0.2

0.14

TA = 25oC

, ON-RESISTANCE (OHM)

0.08

DS(ON)

R

0.02 12345

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

-3.5V

-4.5V

ID = -1.5A

Figure 3. On-Resistance Variation with

Temperature.

8

VDS = -5V

6

4

, DRAIN CURRENT (A)

D

2

-I

0

0.511.522.5

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

TA = 125oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001 0 0.2 0.4 0.6 0.8 1 1.2

BODY DIODE FORWARD VOLTAGE (V)

-V

SD,

25oC

-55oC

with Source Current and Temperature.

FDC6318P Rev D (W )

)

E

)

Typical Characteristics

FDC6318P

5

ID = -2.5A

4

3

2

, GATE-SOURCE VOLTAGE (V)

1

GS

-V

0

02468

VDS = -4V

Q

, GATE CHARGE (nC)

g

-6V

-8V

800

600

400

CAPACITANCE (pF

200

0

C

RSS

036912

-V

C

ISS

C

OSS

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

VGS = -4.5V

SINGLE PULSE

, DRAIN CURRENT (A)

D

0.1 R

= 130oC/W

θ

-I

JA

= 25oC

T

A

0.01

0.1 1 10 100

-V

DS

100ms

1s

DC

, DRAIN-SOURCE VOLTAGE (V)

10ms

1ms

100µs

20

15

10

5

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

f = 1 MHz V

= 0 V

GS

SINGLE PULSE

= 130°C/W

R

θJA

= 25°C

T

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANC

0.1

0.01

R

(t) = r(t) * R

JA

θ

R

= 130oC/W

JA

θ

P(pk

t

1

t

2

- TA = P * R

T

J

Duty Cycle, D = t

JA

θ

(t)

θJA

/ t

1

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDC6318P Rev D (W )

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™

STAR*POWER is used under license

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™



OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench



QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER

SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4