Datasheet FDC6308P Datasheet (Fairchild Semiconductor)

FDC6308P

Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET

FDC6308P

July 1999

General Description

This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).

These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.

Features

 -1.7 A, -18 V. R

R

 Extended V

= 0.18 Ω @ V

DS(ON)

= 0.30 Ω @ V

DS(ON)

range (±12V) for battery applications.

GSS

 Low gate charge (3nC typical).

 Fast switching speed.

= -4.5 V

GS

= -2.5 V

GS

 High performance trench technology for extremely

Applications

 Load switch
 Battery protection

low R

 SuperSOT

than standard SO-8); low profile (1mm thick).

.

DS(ON)

TM

-6 package: small footprint (72% smaller

 Power management

D2

S1

4

3

D1

5

2

G2

SuperSO T -6

TM

Absolute Maximum Ratings T

G1

S2

= 25°C unless otherwise noted

A

6

1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous (Note 1a) -1.7 A

- Pulsed -5

Power Dissipation for Single Operation (Note 1a) 0.96 W

(Note 1b)

(Note 1c)

Operating and Storage Junction Temperature Range -55 to +150

±12

0.9

0.7

V

°C

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 130
Thermal Resistance, Junction-to-Case (Note 1) 60

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.308

1999 Fairchild Semiconductor Corporation

FDC6308P 7’’ 8mm 3000 units

°C/W
°C/W

FDC6308P Rev. C

FDC6308P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characterist ic s

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = -250 µA

V

GS

= -250 µA, Referenced to 25°C

I

D

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -12 V, VDS = 0 V -100 nA

-20 V

-15

mV/°C

µA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain-Source

On-Resistance

= VGS, ID = -250 µA

V

DS

= -250 µA, Referenced to 25°C

I

D

VGS = -4.5 V, ID = -1.7 A
V

= -4.5 V, ID = -1.7 A @125°C

GS

V

= -2.5 V, ID = -1.4 A

GS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -2.5 A
Forward Transconductance VDS = -5 V, ID = -1.7 A 4 S

-0.6 -1.1 -1.5 V

2.7

0.143

0.22

0.25

mV/°C

0.18

0.28

0.30

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 265 pF
Output Capacitance 80 pF
Reverse Transfer Capacitance

V

= -10 V, VGS = 0 V

DS

f = 1.0 MHz

45 pF

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time 6 12 ns
Turn-On Rise Time 9 18 ns

= -10 V, ID = -1 A

V

DD

V

= -4.5 V, R

GS

GEN

= 6 Ω

Turn-Off Delay Time 14 25 ns
Turn-Off Fall Time
Total Gate Charge 3 5 nC
Gate-Source Charge 0.7 nC

V

= -10 V, ID = -1.7 A

DS

= -4.5 V

V

GS

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

of the drain pins. R
sharing the dissipated heat energy equally.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current -0.8 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A (Note 2) -0.8 -1.2 V

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface

is guaranteed by design while R

θJC

a) 130 °C/W when

mounted on a 0.125 in
pad of 2 oz. copper.

is determined by the user's board design. Both devices are assumed to be operating and

θCA

2

b) 140 °C/W when

mounted on a 0.005 in
pad of 2 oz. copper.

2

c) 180 °C/W when

39ns

0.8 nC

mounted on a minimum pad.

FDC6308P Rev. C

Typical Characteristics

FDC6308P

10

8

6

4

2

, DRAIN-SOURCE CURRENT (A)

D

-I

0

012345

VGS = -4.5V

-4.0V

-3.5V

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

-3.0v

-2.5V

-2.0V

2.2

2

1.8
VGS = -2.5V

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-R E SI ST AN CE

-3.0V

-3.5V

-4.0V

0.8

0246810

- I

, DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

1.5
ID = -1.7A

1.4

= -4.5V

V

GS

1.3

1.2

1.1

1

, NORMALIZED

0.9

DS(ON)

R

0.8

0.7

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.5

0.4

0.3

0.2

, ON-RESISTANCE (OHM)

0.1

DS(ON)

R

0

12345

, GATE TO SOURCE VOLTAGE (V)

-V

GS

-4.5V

ID = -0.9A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation

with Temperature.

10

VDS = -5V

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

0.51.52.53.54.55.5

-V

TA = -55oC

, GATE TO SOURCE VOLTAGE (V)

GS

25oC

125oC

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

10

VGS=0

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001

00.20.40.60.811.21.41.6

TJ=125oC

25oC

-55oC

-V

, BODY DIODE VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDC6308P Rev. C

Typical Characteristics (continued)

FDC6308P

5

ID = -1.7A

4

VDS = 5V

10V

15V

400

300

C

ISS

3

200

2

1

, GATE-SOUR C E VOL TA GE (V)

GS

-V

0

00.511.522.533.54

Q

, GATE CHARGE (nC)

g

100

0

048121620

C

OSS

C

RSS

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

CAPACITANCE (pF)

Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.

100

10

R

LIMIT

DS(ON)

1

, DRAIN CURRENT (A)

D

-I

0.01

VGS = 4.5V

SINGLE PULSE

0.1
R

θJA

TA = 25

= 180oC/W

o

C

0.1 1 10 100

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

DC

100ms

1s

10ms

100µs

1ms

5

4

SINGLE PULSE

R =180°C/W

JA

θ

T = 25°C

3

2

POWER (W)

1

0

0.01 0.1 1 10 100 300
SINGLE PULSE TIME (SEC)

f = 1MHz
V

= 0 V

GS

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.5

0.2

0.2

0.1

0.1

0.05

0.05

0.02

r(t), NORMALIZED EFFECTIVE

0.02

TRANSIENT THERMAL RESISTANCE

0.01

0.01
Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 300

t , TIME (sec)

1

R (t) = r(t) * R

JA

θ

R =

180

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t / t

°C/W

JA

θ

JA

θ

2

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.

FDC6308P Rev. C

g

y

y

g

SuperSOTTM-6 Tape and Reel Data and Package Dimensions

SSOT-6 Packaging
Configuration:

Fi

ure 1.0

SSOT-6 Packaging Information

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)

Note/Comments

Customize Label

Stan dard

(no fl ow c ode )

3,000 10,000
7" Di a

184x187x47 343x343x64

9,000 30,000

0.0158 0.0158

0.1440 0.4700

TNR

D87Z

TNR

13"

Antistatic Cover Tape

F63TNR
Label

Packaging Description:

SSOT-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni ts p er 7 " or 17 7cm di amet er re el. The reels are
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 10,000 units per 13"
or 330cm diam eter reel. T his a nd some othe r opti ons ar e
described in the Packaging Information table.

These full reels are individually barcode labeled and
placed inside a pizza b ox (illustra ted in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printi ng. One pizza box contain s three r eels maximu m.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes

Embo ssed

Carrier Tape

depending on the number of parts shipped.

631

SSOT-6 Unit Orientation

343mm x 342mm x 64mm

Intermediate box for D87Z Opti on

631

631631

631

Pin 1

F63TNR Label

184mm x 187mm x 47mm

Pizza Box for Standard Option

SSOT-6 Tape Leader and Trailer
Configuration:

Carrier Tape

Cover Tape

1998 Fairchild Semiconductor Corporation

ure 2.0

Fi

Tr ailer Tape
300mm mi nimum or
75 empt

F63TNR
Label

F63TNR
Label

pock ets

Component s

F63TNR Label sampl e

LOT: CBVK7 41B019

FSID: FDC633N

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 3000

SPEC:

N/F: F (F63TNR)3

Leader Tape
500mm mi nimum or
125 empt

pock ets

August 1999, Rev. C

g

g

SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued

SSOT-6 Embossed Carrier Tape
Configuration:

T

K0

Wc

Fi

B0

ure 3.0

P0

D0

E1

F

W

E2

Tc

A0

D1

P1

User Direction of Feed

Dimensions are in millimeter

Pkg type

SSOT-6

(8mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

SSOT-6 Reel Configuration:

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

3.23

3.18

8.0

1.55

1.125

1.75

6.25

+/-0.10

+/-0.10

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

+/-0.3

+/-0.05

Fi

+/-0.125

ure 4.0

+/-0.10

B0

3.50

min

+/-0.05

20 deg maximum

A0

Sketch B (Top View)

Component Rotation

W1 Measured at Hub

4.0
+/-0.1

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

4.0
+/-0.1

1.37

0.255
+/-0.150

5.2
+/-0.3

0.5mm
maximum

+/-0.10

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

0.06
+/-0.02

Dim A

max

Dim N

Diameter Option

7"

See detail AA

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

W3

Dim D

min

DETAIL AA

Dimensions are in inches and millimeters

Tape Size

8mm 7" Dia

8mm 13" Dia

Reel

Option

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00
330

1.5

0.059

1.5

512 +0.020/-0.008
13 +0.5/-0.2

512 +0.020/-0.008
13 +0.5/-0.2

0.795

2.165550.331 +0.059/-0.000

20.2

0.795

4.00

20.2

100

8.4 +1.5/0

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.567

14.4

0.311 – 0.429

7.9 – 10.9

0.311 – 0.429

7.9 – 10.9

July 1999, Rev. C

SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued

SuperSOT -6 (FS PKG Code 31, 33)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0158

1998 Fairchild Semiconductor Corporation

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™

2

E

CMOS

TM

FACT™
FACT Quiet Series™



FAST
FASTr™
GTO™

HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench



QFET™
QS™

Quiet Series™
SuperSOT™-3
SuperSOT™-6

SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. E