Page 1
FDC6306P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDC6306P
February 1999
General Description
These P-Channel 2.5V specified MOSFET s are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
Applications
• Load switch
• Battery protection
• Power management
D2
S1
D1
G2
SuperSOT -6
TM
Absolute Maximum Ratings
S2
G1
TA = 25°C unless otherwise noted
Features
• -1.9 A, -20 V. R
R
= 0.170 Ω @ V
DS(on)
= 0.250Ω @ V
DS(on)
= -4.5 V
GS
= -2.5 V
GS
• Low gate charge (3 nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
• SuperSOT
than standard SO-8); low profile (1mm thick).
.
DS(ON)
TM
-6 package: small footprint (72% smaller
4
5
6
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed -5
Power Dissipation for Si ngl e Operat i on
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
8V
±
-1.9 A
0.96 W
0.9
0.7
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, J unc tion-to-Ambient
Thermal Resistance, J unc tion-to-Case
(Note 1a)
(Note 1)
130
60
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
306
.
1999 Fairchild Semiconductor Corporation
FDC6306P 7’’ 8mm 3000 units
C
°
C/W
°
C/W
°
FDC6306P Rev. C
Page 2
FDC6306P
yp
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
Breakdown Voltage Temperature
DSS
Coefficient
J
ID = -250 µA, Referenced to 25°C-18 mV/
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.9 -1.5 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = -250 µA, Referenced to 25°C3 mV/
VGS = -4.5 V, ID = -1.9 A
V
= -4.5 V, ID = -1.9 A @125°C
GS
V
= -2.5 V, ID = -1.7 A
GS
On-State Drain Current VGS = -4.5 V, VDS =- 5 V -5 A
Forward Transconductance VDS = -5 V, ID = -1.9 A 4 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 441 pF
Output Capacitance 127 pF
Reverse Transfer Capacitance
V
= -10 V, VGS = 0 V,
DS
f = 1.0 MHz
Max Units
0.170
0.127
0.270
0.182
0.250
0.194
67 pF
C
°
A
µ
C
°
Ω
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 6 12 ns
Turn-On Rise Time 9 18 ns
Turn-Off Delay Time 14 25 ns
Turn-Off Fall Time
Total Gate Charge 3 4.2 nC
Gate-Source Charge 0.7 nC
Gate-Drain Charge
V
= -10 V, ID = -1 A,
DD
V
= -4.5 V, R
GS
V
= -10 V, ID = -1.9 A,
DS
V
= -4.5 V
GS
GEN
= 6
Ω
39ns
0.8 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
of the drain pins. R
sharing the dissipated heat energy equally.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -0.8 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
θJA
is guaranteed by design while R
θJC
a) 130 °C/W when
mounted on a 0.125 in
pad of 2 oz. copper.
is determined by the user's board design.Both devices are assumed to be operating and
θJA
2
b) 140 °C/W when
mounted on a 0.005 in
pad of 2 oz. copper.
(Note 2)
2
-0.8 -1.2 V
c) 180 °C/W when
mounted on a 0.0015 in
pad of 2 oz. copper.
2
FDC6306P Rev. C
Page 3
T ypical Characteristics
FDC6306P
12
10
8
6
4
2
D
- I , DRAIN-SOURCE CURRENT (A)
0
012345
V = -4.5 V
GS
- V , DRAIN-S OURCE VOLTA GE (V)
-4.0V
-3 .5V
DS
-3 .0V
-2 .5V
-2 .0V
2
1.8
V = -2.5 V
1.6
1.4
1.2
DS(on)
R , NOR MALI ZED
DR AI N-SOUR C E ON -RES IST ANCE
0.8
GS
-3.0V
-3.5V
-4.0V
1
0246810
- I , DRAI N CURRENT (A)
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation
with Drain Current and Gate Voltage.
1.6
I = -1 .9A
D
V = -4.5V
GS
1.4
1.2
1
DS(ON)
R , NORMA L IZED
0.8
DR AI N-SOURCE ON -RES IST ANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0.5
0.4
0.3
0.2
0.1
DS(ON)
R , ON-R E SISTA NCE (OH M)
0
12345
-V , GATE TO S OURCE VOLT AG E (V)
GS
-4.5V
I = -1A
D
T = 125°C
J
25°C
Figure 3. On-Resistance Variation
with Temperature.
10
V = -5V
DS
8
6
4
D
- I , DRAIN CURRENT (A)
2
0
012345
-V , G ATE TO SO U RCE VOLT AG E (V )
GS
T = -55°C
J
25°C
125°C
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
V = 0V
GS
1
0.1
0.01
0.001
S
-I , REV ERSE DRAIN CURRENT (A )
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
T = 125°C
J
25°C
-55°C
- V , BO D Y D I OD E FO R W AR D VO L T AGE (V )
SD
Figure 6. Body Diode Forward V oltage
Variation with Source Current
and Temperature.
FDC6306P Rev. C
Page 4
Typical Characteristics (continued)
FDC6306P
5
I = -1.9A
D
4
3
2
1
GS
-V , GATE-SOURCE VOLT AGE (V)
0
01234
Q , GAT E CHAR GE (nC)
V = -5V
DS
-10V
-15V
g
1000
300
100
CA PACITAN CE (pF)
f = 1 MHz
V = 0 V
GS
30
0.1 0.2 0.5 1 2 5 10 20
-V , DRAI N TO SOURCE VOL T AG E ( V)
DS
Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
30
10
3
RDS(ON) LIMIT
1
0.3
V = -4.5V
GS
SINGLE PULSE
R = 180°C/W
θ
JA
T = 25°C
A
0.1 0.2 0.5 1 2 5 10 20 50
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , DRAIN CURRENT (A)
D
0.03
0.01
0.1
1s
DC
100ms
100us
1ms
10ms
5
4
3
2
POWER (W)
1
0
0.01 0.1 1 10 100 300
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R =180°C/W
θ
JA
T = 25°C
C
iss
C
oss
C
rss
A
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
r(t), NORMALIZED EFFECTIVE
0.02
TRANSIENT THERMAL RESISTANCE
0.01
0.01
Single Pulse
0.0001 0.001 0.01 0.1 1 10 100 300
t , TIME (sec)
1
R (t) = r(t) * R
JA
θ
R =
180
JA
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
A
Duty Cycle, D = t / t
°C/W
JA
θ
JA
θ
2
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDC6306P Rev. C
Page 5
g
y
y
g
SuperSOTTM-6 Tape and Reel Data and Package Dimensions
SSOT-6 Packaging
Configuration:
Fi
ure 1.0
SSOT-6 Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Customize Label
Stan dard
(no fl ow c ode )
3,000 10,000
7" Dia
184x187x47 343x343x64
9,000 30,000
0.0158 0.0158
0.1440 0.4700
TNR
D87Z
TNR
13"
Antistatic Cover Tape
F63TNR
Label
Packaging Description:
SSOT-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni ts p er 7 " or 17 7cm di amet er re el. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13"
or 330cm diam eter reel. T his a nd some othe r opti ons ar e
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printi ng. One pizza box contain s three r eels maximu m.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes
Embo ssed
Carrier Tape
depending on the number of parts shipped.
631
SSOT-6 Unit Orientation
343mm x 342mm x 64mm
Intermediate box for D87Z Option
631
631631
631
Pin 1
F63TNR Label
184mm x 187mm x 47mm
Pizza Box for Standard Option
SSOT-6 Tape Leader and Trailer
Configuration:
Carrier Tape
Cover Tape
1998 Fairchild Semiconductor Corporation
ure 2.0
Fi
Tr ailer Tape
300mm mi nimum or
75 empt
F63TNR
Label
F63TNR
Label
pock ets
Component s
F63TNR Label sampl e
LOT: CBVK7 41B019
FSID: FDC633N
D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:
QTY: 3000
SPEC:
N/F: F (F63TNR)3
Leader Tape
500mm mi nimum or
125 empt
pock ets
August 1999, Rev. C
Page 6
g
g
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SSOT-6 Embossed Carrier Tape
Configuration:
T
K0
Wc
Fi
B0
ure 3.0
P0
D0
E1
F
W
E2
Tc
A0
P1
D1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SSOT-6
(8mm)
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
SSOT-6 Reel Configuration:
A0 B0 W D0 D1 E1 E2 F P1 P 0 K0 T Wc Tc
3.23
3.18
8.0
1.55
1.125
1.75
6.25
+/-0.10
+/-0.10
+/-0.3
+/-0.05
+/-0.125
+/-0.10
rotational and lateral movement requirements (see sketches A, B, and C).
B0
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch B (Top View)
Fi
ure 4.0
Component Rotation
min
3.50
+/-0.05
20 deg maximum
A0
W1 Measured at Hub
4.0
+/-0.1
Typical
component
cavity
center line
Typical
component
center line
Dim A
Max
4.0
+/-0.1
1.37
0.255
+/-0.150
5.2
+/-0.3
0.5mm
maximum
+/-0.10
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
0.06
+/-0.02
Dim A
max
Dim N
Diameter Option
7"
See detail AA
B Min
Dim C
13" Diameter Option
See detail AA
W2 max Measured at Hub
W3
Dim D
min
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
8mm 7" Dia
8mm 13" Dia
Reel
Option
Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
7.00
0.059
177.8
13.00
330
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
0.795
2.165550.331 +0.059/-0.000
20.2
0.795
4.00
20.2
100
8.4 +1.5/0
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.567
14.4
0.311 – 0.429
7.9 – 10.9
0.311 – 0.429
7.9 – 10.9
July 1999, Rev. C
Page 7
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SuperSOT -6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
1998 Fairchild Semiconductor Corporation
September 1998, Rev. A
Page 8
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
2
CMOS
E
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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