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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistor
High-Frequency Amp, Differential Amp
Applications
Ordering number:EN4653
FC152
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC152 is formed with two chips, being equiva-
Package Dimensions
unit:mm
2104A
[FC152]
lent to the 2SC4270, placed in one package.
· Excellent in thermal equilibrium, pair capability and
especially suited for differerntial amp.
1:Emitter 1
1:Emitter 1
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
2:Base 1
3:Base 2
4:Collector 2
5:Emitter 2
6:Collector 1
6:Collector 1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
C
T
tinu1 002Wm
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
oitaRniaGtnerruCCDh
ecnereffiDegatloVE-BV
tcudorPhtdiwdanB-niaGf
ecnaticapaCtuptuOboCV
niaGrewoPGPVECI,V01=
erugiFesioNFNVECI,V01=
V
OBC
V
OBE
V
EF
V
/llams(EF
)egral
V
-egral(EB
)llams
V
T
I,V02=
BC
BE
EC
EC
EC
EC
BC
0=1.0Aµ
E
I,V2=
0=01Aµ
C
I,V01=
Am5=06002
C
I,V01=
Am5=7.059.0
C
I,V01=
0=0.301Vm
C
I,V01=
Am01=5.10.3zHG
C
zHM1=f,V01=7.00.1Fp
C
C
zHG9.0=f,Am01=21Bd
zHG9.0=f,Am3=0.3Bd
nimpytxam
Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large)
and VBE(large-small) are for pair capability
Marking:152
sgnitaR
52V
51V
3V
05Am
003Wm
˚C
˚C
tinU
52098HA (KT)/41594TH (KOTO) X-7851 No.4653-1/4
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FC152
No.4653-2/4
Page 3
FC152
No.4653-3/4
Page 4
FC152
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4653-4/4
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