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l Fully Isolated Package
l Easy to Use and Parallel
l Low On-Resistance
l Dynamic dv/dt Rating
l Fully Avalanche Rated
l Simple Drive Requirements
l Low Gate Charge Device
l Low Drain to Case Capacitance
l Low Internal Inductance
G
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
PD - 91650A
FA57SA50LC
HEXFET® Power MOSFET
D
S
V
R
DS(on)
DSS
= 500V
= 0.08Ω
ID = 57A
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
SOT-227
levels to approximately 500 watts. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 57
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 36 A
I
DM
PD @TC = 25°C Power Dissipation 625 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
T
J
T
STG
V
ISO
Pulsed Drain Current 228
Linear Derating Factor 5.0 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 725 mJ
Avalanche Current 57 A
Repetitive Avalanche Energy 62.5 mJ
Operating Junction and -55 to + 150 °C
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS) 2.5 kV
Mounting torque, M4 srew 1.3 N•m
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
Junction-to-Case ––– 0.20
Case-to-Sink, Flat, Greased Surface 0.05 ––– °C/W
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FA57SA50LC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
s
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 1.0mA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.62 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.08 Ω VGS = 10V, ID = 34A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 43 ––– ––– S VDS = 50V, ID = 34A
Drain-to-Source Leakage Current
––– ––– 50
––– ––– 500 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 500V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 225 338 ID = 57A
Gate-to-Source Charge ––– 51 77 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– 98 147 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 32 ––– VDD = 250V
Rise Time ––– 152 ––– ID = 57A
Turn-Off Delay Time ––– 108 –– – RG =2.0Ω (Internal)
ns
Fall Time ––– 118 ––– RD = 4.3Ω, See Fig. 10
Internal Source Inductance ––– 5.0 ––– nH Between lead,
and center of die contact
Input Capacitance ––– 10000 ––– VGS = 0V
Output Capacitance ––– 1500 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
57
228
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 57A, VGS = 0V
Reverse Recovery Time ––– 901 1351 n s TJ = 25°C, IF = 57A
Reverse Recovery Charge ––– 15 23 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
= 25°C, L = 446µH
J
= 57A. (See Figure 12)
AS
I
≤ 57A, di/dt ≤ 200A/µs, V
SD
DD
≤ V
(BR)DSS
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
,
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FA57SA50LC
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
1000
°
T = 150 C
J
100
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
3.0
2.5
I =
D
57A
°
T = 25 C
J
10
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4 5 6 7 8 9 10
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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FA57SA50LC
15000
12000
9000
6000
C, Capacitance (pF)
3000
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
-V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C
C
C
C SHORTED
+ C
iss
oss
rss
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
°
T = 150 C
100
J
20
I =
57 A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 60 120 180 240 300 360
Q , Total Gate Charge (nC)
G
V = 400V
DS
V = 250V
DS
V = 100V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
100
BY R
DS(on)
10us
13
°
T = 25 C
SD
J
100us
10
D
V = 0 V
GS
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
1 10 100 1000 10000
°
J
V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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60.0
50.0
40.0
30.0
FA57SA50LC
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D.U.T.
D
+
V
DD
-
20.0
D
I , Drain Current (A)
10.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
1
thJC
D = 0.50
0.1
0.20
0.10
1 2
P
DM
t
1
t
2
0.05
0.01
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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FA57SA50LC
A
15V
DRIVER
+
-
R
V
G
20V
DS
L
D.U.T
I
AS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
1500
TOP
1200
900
600
300
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
°
D
25A
35A
57A
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
+
V
-
Fig 13b. Gate Charge Test Circuit
DS
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FA57SA50LC
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFETS
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FA57SA50LC
SOT-227 Package Details
4
1
38.30 ( 1.508 )
37.80 ( 1.488 )
-A-
30.20 ( 1.189 )
29.80 ( 1.173 )
4X
Tube
8.10 ( .319 )
7.70 ( .303 )
4.40 (.173 )
4.20 (.165 )
12.50 ( .492 )
7.50 ( .295 )
2.10 ( .082 )
1.90 ( .075 )
3
6.25 ( .246 )
2
15.00 ( .590 )
C H AM F ER
2.00 ( .079 ) X 457
25.70 ( 1.012 )
25.20 ( .992 )
-B-
R FULL
0 .2 5 ( . 0 1 0 ) M C A M B M
2.10 ( .082 )
1.90 ( .075 )
-C-
0.12 ( .005 )
LEAD ASSIGM ENTS
C
E
G
E
IGBT
A1
K2
4
1
K1 A2
HEXFRED
3
2
S
4
1
HEXFET
12.30 ( .484 )
11.80 ( .464 )
D
3
2
GS
QUAN TITY PER TUBE IS 10
M4 SREW AND WASHER INCLUDED
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 2/99
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