Excelics
EPA160B
DATA SHEET
High Efficiency Heterojunction Power FET
+31.0dBm TYPICAL OUTPUT POWER
•
5.5dB TYPICAL POWER GAIN AT 18GHz
•
0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
•
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL HETEROJUNCTION
•
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 40mA PER BIN RANGE
•
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
S
40
95 50 120
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
29.0 31.0
9.0 10.5
540
156
50
D
G
31.0
5.5
45
D
SS
G
48
370
100
dBm
dB
%
Idss
Gm
Vp
BVgd
BVgs
Rth
Saturated Drain Current Vds=3V, Vgs=0V 290 480 660 mA
Transconductance Vds=3V, Vgs=0V 320 500 mS
Pinch-off Voltage Vds=3V, Ids=4.5mA -1.0 -2.5 V
Drain Breakdown Voltage Igd=1.6mA -11 -15 V
Source Breakdown Voltage Igs=1.6mA -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 33
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
80mA
28dBm
175oC
-65/175oC
4.1W
8V
-3V
435mA
14mA
@3dB Compression
150oC
-65/150oC
3.4W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
o
C/W
EPA160B
DATA SHEET
High Efficiency Heterojunction Power FET
P-1dB & PAE vs. Vds
f = 12 GHz
Ids = 50% Idss
40
35
30
P-1dB (dBm)
25
45678
Drain-Source Voltage (V)
55
50
45
40
PAE (%)
35
30
50
40
30
20
10
Pout (dBm) or PAE (%)
0
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.902 -115.3 15.468 116.0 0.025 38.1 0.298 -138.8
2.0 0.884 -146.5 8.678 96.8 0.028 27.8 0.342 -156.8
3.0 0.881 -158.7 5.971 86.9 0.030 28.6 0.351 -163.1
4.0 0.881 -166.4 4.579 79.4 0.031 30.7 0.359 -165.6
5.0 0.880 -172.1 3.705 72.6 0.032 35.1 0.367 -165.7
6.0 0.878 -176.6 3.113 66.5 0.034 38.3 0.381 -165.8
7.0 0.879 179.0 2.703 60.7 0.036 40.0 0.396 -164.7
8.0 0.882 174.5 2.374 55.1 0.038 41.6 0.416 -163.6
9.0 0.881 169.9 2.110 49.6 0.038 44.4 0.437 -162.9
10.0 0.887 165.5 1.900 44.4 0.040 45.0 0.461 -161.9
11.0 0.891 160.6 1.718 38.8 0.042 45.8 0.491 -161.5
12.0 0.898 155.6 1.557 33.2 0.044 45.9 0.521 -161.7
13.0 0.905 151.0 1.411 27.7 0.044 45.4 0.554 -162.8
14.0 0.908 146.6 1.277 22.3 0.046 43.1 0.580 -164.2
15.0 0.910 143.2 1.151 17.2 0.047 42.3 0.605 -166.4
16.0 0.912 140.2 1.051 12.1 0.048 39.5 0.626 -168.6
17.0 0.920 137.9 0.956 7.7 0.050 37.6 0.645 -171.6
18.0 0.934 135.9 0.880 3.0 0.052 37.6 0.665 -174.5
19.0 0.934 134.4 0.810 -1.7 0.054 34.6 0.684 -177.7
20.0 0.932 133.9 0.742 -5.7 0.057 33.8 0.697 178.4
21.0 0.923 134.3 0.684 -8.6 0.060 32.2 0.700 174.7
22.0 0.934 135.0 0.641 -11.5 0.063 32.4 0.707 171.7
23.0 0.946 134.6 0.616 -14.3 0.068 32.5 0.718 168.7
24.0 0.948 133.8 0.579 -17.7 0.072 33.3 0.719 166.0
25.0 0.949 133.0 0.558 -20.0 0.079 32.7 0.722 163.7
26.0 0.935 131.3 0.527 -22.3 0.084 33.0 0.723 162.4
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.
Pout & PAE vs. Pin
f = 12 GHz
Vds = 8V, Ids = 50% Idss
PAE
Pout
0 5 10 15 20 25
Pin (dBm)
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