PROVIDES EXTRA HIGH POWER EFFICIENCY,
AND HIGH RELIABILITY
Applicati ons
•
• DC to 18 GHz
PASSIVATION
3N4
High Dynami c Ra n g e LNA
0LQ
6
$OO/HDGV
All Dimensions In mils.
'
6
*
ELECTRICAL CHARACTERIS T I CS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
IP3
NF
GA
Idss
Gm
Vp
BVgd
BVgs
Rth
* Overall Rth depends on case mounting.
Output Power at 1dB Compression f=2GHz
Vds=6V, Ids=50% Idss f=12GHz
Gain at 1dB Compression f=2GHz
Vds=6V, Ids=50% Idss f=12GHz
Power Added Efficiency at 1dB Compression f=2GHz
Vds=6V, Ids=50% Idss f=12GHz
+5dBm P
(5V/90mA)
Noise Figure (5V/50mA) f=2GHz
(5V/90mA)
Associated Gain (5V/50mA) f=2GHz
(5V/90mA)
Saturat ed Drain Current Vds=3V, Vgs=0V 110 180 250 mA
Transconductance Vds=3V, Vgs=0V 120 190 mS
Pinch-off Voltage Vds=3V, Ids=2.0mA -1.0 -2.5 V
Drain B r eakdown Vo ltage Igd=1.0m A -10 -15 V
Source Breakdown Vol tage Igs=1.0m A -6 -14 V
Thermal Resistance 175
/Tone (5V/50mA) f=2GHz
OUT
24.0
17.0
7.0
26.0
25.5
19.0
9.0
55
28
45
31
0.4
0.6
20.0
20.0
*
dBm
%
dBm
dB
dB
oC/W
dB
O
MAXIMUM RATING S AT 2 5
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Voltage 10V 6V
Gate-Source Voltage -6V -3V
Drain C ur rent Idss 110mA
Forward Gate Current 30mA 5mA
Input Power 23dBm @ 3dB Compression
Channel Temperature 175
Stor age Tem perature -65/175
Total P ower D issi pation 780mW 650mW
C
o
C 150 oC
o
C -65/150 oC
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA060B-70
]
]
DATA SHEET
High Efficiency Heterojunction Power FET
Typical Performance
Noise Figure &IP3
EPA060B-70 @5V, 2GHz
(P
/Tone = 5dBm)
OUT
0.8
0.6
40
30
NF
0.4
NF [dB
0.2
0
20
10
0
IP3
IP3 [dBm
020406080100120140
Ids [mA]
S-PARAMETERS
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG