Page 1
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
EL2125C - Preliminary
Features
• Voltage noise of only 0.83nV/√Hz
• Current noise of only 2.4pA/√Hz
• Low offset voltage ≤200µV
• 180MHz -3dB BW for AV=10
• Low supply current - 10mA
• SOT23 package available
• ±2.5V to ±15V operation
Applications
• Ultrasound input amplifiers
• Wideband instrumentation
• Communication equipment
• AGC & PLL active filters
• Wideband sensors
Ordering Information
Part No Package Tape & Reel Outline #
EL2125CW 5-Pin SOT23 MDP0038
EL2125CS 8-Pin SO MDP0027
EL2125CN 8-Pin PDIP MDP0031
General Description
The EL2125C is an ultra-low noise, wideband amplifier that runs on
half the supply current of competitive parts. It is intended for use in
systems such as ultrasound imaging where a very small signal needs to
be amplified by a large amount without adding significant noise. Its
low power dissipation enables it to be packaged in the tiny SOT23
package, which further helps systems where many input channels create both space and power dissipation problems.
The EL2125C is stable for gains of 10 and greater and uses traditional
voltage feedback. This allows the use of reactive elements in the feedback loop, a common requirement for many filter topologies. It
operates from ±2.5V to ±15V supplies and is available in a 5-pin
SOT23 package and 8-pin SO and 8-pin PDIP packages.
The EL2125C is fabricated in Elantec’s proprietary complementary
bipolar process, and is specified for operation from -45°C to +85°C.
Connection Diagrams
1
NC
1
OUT
2
VS-
3
EL2125CW
(5-Pin SOT23)
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2001 Elantec Semiconductor, Inc.
5
VS+
-+
4
IN-IN+
2
IN-
3
IN+
4
VS-
EL2125CS
(8-Pin SO and 8-Pin PDIP)
-
+
8
NC
7
VS+
6
OUT
5
NC
October 2, 2001
Page 2
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
Absolute Maximum Ratings (T
VS+ to VS- 33V
Continuous Output Current 40mA
Any Input VS- - 0.3V to VS+ + 0.3V
EL2125C - Preliminary
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = T
= 25°C)
A
Power Dissipation See Curves
Operating Temperature -45°C to +85°C
Storage Temperature -60°C to +150°C
A
Electrical Characteristics
VS = ±5V, TA = 25°C, R
Parameter Description Conditions Min Typ Max Unit
DC Performance
V
OS
T
CVOS
I
B
I
OS
T
CIB
C
IN
A
VOL
PSRR Power Supply Rejection Ratio
CMRR Common Mode Rejection Ratio
CMIR Common Mode Input Range V
V
OUT
V
OUTL
I
OUT
I
S
AC Performance - R
BW -3dB Bandwidth 175 MHz
BW ±0.1dB ±0.1dB Bandwidth 34 MHz
BW ±1dB ±1dB Bandwidth 150 MHz
Peaking Peaking 0.4 dB
SR Slew Rate V
OS Overshoot, 4Vpk-pk Output Square Wave Positive 0.6 %
T
S
V
N
I
N
HD2 2nd Harmonic Distortion
HD3 3rd Harmonic Distortion
THD Total Harmonic Distortion
IMD Intermodulation Distortion
1. Measured by moving the supplies from ±4V to ±6V
2. Measured by moving the inputs from +3.5V to -4.4V
3. Pulse test only
4. Frequency = 10MHz, V
5. Frequency = 20MHz, V
6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, R
= 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified.
F
Input Offset Voltage (SO8 & PDIP8) -0.2 2 mV
Input Offset Voltage (SOT23-5) 3 mV
Offset Voltage Temperature Coefficient TBD µV/°C
Input Bias Current -30 -21 µA
Input Bias Current Offset 0.2 1 µA
Input Bias Current Temperature Coefficient TBD nA/°C
Input Capacitance 2.2 pF
Open Loop Gain 65 81 dB
Output Voltage Swing No load, R
Output Voltage Swing R
Output Short Circuit Current
[1]
[2]
= 1kΩ 3.5 3.8 V
F
= 100Ω 2.8 3.1 V
[3]
L
75 96 dB
65 100 dB
80 100 mA
Supply Current 10.1 12 mA
= 20Ω, C
G
= 5pF
L
= 2VPP, measured at 20% to 80% TBD 190 V/µs
OUT
Negative 2.7 %
Settling Time to 0.1% of ±1V Pulse TBD ns
Voltage Noise Spectral Density 0.83 nV/√Hz
Current Noise Spectral Density 2.4 pA/√Hz
OUT
OUT
[4]
[4]
[5]
[6]
= 1Vpk-pk, into 100Ω and 5pF load
= -20dBm (0.0274V
) into 500Ω and 15pF load
RMS
= 500Ω and 15pF
LOAD
TBD dBc
TBD dBc
TBD dBc
TBD %
2
Page 3
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
Electrical Characteristics
VS = ±15V, TA = 25°C, R
Parameter Description Conditions Min Typ Max Unit
DC Performance
V
OS
T
CVOS
I
B
I
OS
T
CIB
C
IN
A
VOL
PSRR Power Supply Rejection Ratio
CMRR Common Mode Rejection Ratio
CMIR Common Mode Input Range TBD V
V
OUT
V
OUTL
I
OUT
I
S
AC Performance - R
BW -3dB Bandwidth 220 MHz
BW ±0.1dB ±0.1dB Bandwidth 23 MHz
BW ±1dB ±1dB Bandwidth 63 MHz
Peaking Peaking 2.5 dB
SR Slew Rate V
OS Overshoot, 4Vpk-pk Output Square Wave 0.6 %
T
S
V
N
I
N
HD2 2nd Harmonic Distortion
HD3 3rd Harmonic Distortion
THD Total Harmonic Distortion
IMD Intermodulation Distortion
1. Measured by moving the supplies from ±13.5V to ±16.5V
2. Measured by moving the inputs from +13.5V to -14.4V
3. Pulse test only
4. Frequency = 10MHz, V
5. Frequency = 20MHz, V
6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, R
= 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified.
F
Input Offset Voltage (SO8 & PDIP8) -0.2 2 mV
Input Offset Voltage (SOT23-5) 3 mV
Offset Voltage Temperature Coefficient TBD µV/°C
Input Bias Current -30 -21 µA
Input Bias Current Offset 0.16 1 µA
Input Bias Current Temperature Coefficient TBD nA/°C
Input Capacitance 2.2 pF
Open Loop Gain 75 86 dB
Output Voltage Swing No load, R
Output Voltage Swing Positive, R
Output Short Circuit Current
[1]
[2]
= 1kΩ 13.5 V
F
= 180Ω, RL = 500Ω 12.1 V
F
[3]
Negative -11.3 V
75 95 dB
75 100 dB
100 150 mA
Supply Current 10.8 12 mA
= 20Ω, C
G
= 5pF
L
= 2VPP, measured at 20% to 80% TBD 225 V/µs
OUT
Settling Time to 0.1% of ±1V Pulse TBD ns
Voltage Noise Spectral Density 0.95 nV/√Hz
Current Noise Spectral Density 2.1 pA/√Hz
OUT
OUT
[4]
[4]
[5]
[6]
= 1Vpk-pk, into 100Ω and 5pF load
= -20dBm (0.0274V
) into 500Ω and 15pF load
RMS
= 500Ω and 15pF
LOAD
TBD dBc
TBD dBc
TBD dBc
TBD %
EL2125C - Preliminary
3
Page 4
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
Typical Performance Curves
EL2125C - Preliminary
Non-Inverting Frequency Response for Various R
5
VS=±5V
AV=10
RL=500Ω
CL=5pF
0
Normalized Gain (dB)
-5
1M 10M 100M 1G
Inverting Frequency Response for Various R
6
2
-2
-6
Normalized Gain (dB)
-10
VS=±5V
AV=-10
CL=5pF
-14
1M 10M 100M 1G
RF=1kΩ
RF=100Ω
Frequency (Hz)
RF=1kΩ
RF=350Ω
RF=200Ω
Frequency (Hz)
F
RF=499Ω
RF=180Ω
F
RF=499Ω
RF=97.6Ω
Non-Inverting Frequency Response for Various R
5
VS=±15V
AV=10
RL=500Ω
CL=5pF
0
Normalized Gain (dB)
-5
1M 10M 100M 1G
Inverting Frequency Response for Various R
6
2
-2
-6
Normalized Gain (dB)
-10
VS=±15V
AV=-10
CL=5pF
-14
1M 10M 100M 1G
RF=1kΩ
RF=499Ω
RF=100Ω
RF=1kΩ
RF=350Ω
RF=200Ω
RF=700Ω
Frequency (Hz)
RF=499Ω
RF=97.6Ω
Frequency (Hz)
F
RF=180Ω
F
Non-Inverting Frequency Response vs Gain
5
VS=±5V
RL=500Ω
CL=5pF
RG=20Ω
0
AV=50
Normalized Gain (dB)
-5
1M 10M 100M 1G
AV=20
Frequency (Hz)
AV=10
Non-Inverting Frequency Response for Various Gain
5
VS=±15V
RL=500Ω
CL=5pF
RF=700Ω
0
Normalized Gain (dB)
-5
1M 10M 100M 1G
Frequency (Hz)
AV=10AV=20AV=50
4
Page 5
Typical Performance Curves
EL2125C - Preliminary
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
Inverting Frequency Response vs Gain
6
VS=±5V
RL=500Ω
2
CL=5pF
-2
AV=-50
RF=1.75kΩ
-6
Normalized Gain (dB)
-10
-14
1M 10M 100M 1G
Frequency (Hz)
Non-Inverting Frequency Response for Various Output
Signal Levels
5
VS=±5V
AV=10
RF=180Ω
RL= 500Ω
CL=5pF
0
4V
Normalized Gain (dB)
-5
1M 10M 100M 1G
PP
2V
PP
Frequency (Hz)
AV=-10
RF=350kΩ
AV=-20
RF=700kΩ
30mV
PP
500mV
1V
1V
Inverting Frequency Response vs Gain
6
0
AV=-50
VS=±15V
Normalized Gain (dB)
RL=500Ω
CL=5pF
RG=50Ω
-14
1M 10M 100M 1G
Frequency (Hz)
Inverting Frequency Response for Various Output Signal
Levels
6
3mV
PP
2.5V
PP
PP
1V
PP
Frequency (Hz)
0
VS=±5V
AV=-10
RF=350Ω
RL= 500Ω
CL=5pF
3.3V
PP
PP
PP
Normalized Gain (dB)
-14
1M 10M 100M 1G
AV=-10
AV=-20
250mV
500mV
PP
PP
Non-Inverting Frequency Response for Various C
5
VS=±5V
AV=10
3
RF=180Ω
RL=500Ω
1
-1
Normalized Gain (dB)
-3
-5
1M 10M 100M 1G
CL=1pF
Frequency (Hz)
CL=28.5pF
CL=16pF
CL=5pF
L
Non-Inverting Frequency Response for Various C
5
VS=±5V
AV=10
RF=700Ω
RL=500Ω
0
Normalized Gain (dB)
-5
1M 10M 100M 1G
CL=11pF
CL=5pF
CL=1.2pF
Frequency (Hz)
L
CL=17pF
5
Page 6
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
Typical Performance Curves
Inverting Frequency Response for Various C
EL2125C - Preliminary
6
0
Normalized Gain (dB)
VS=±5V
AV=10
RF=350Ω
RL=500Ω
-14
1M 10M 100M 1G
Open Loop Gain and Phase
100
80
60
40
Open Loop Gain (dB)
20
0
10k
CL=29.4pF
CL=16.4pF
CL=11.4pF
CL=5.1pF
CL=1.2pF
Frequency (Hz)
100k 100M
1M
Frequency (Hz)
10M
L
250
150
Phase (°)
50
-50
-150
-250
400M
Inverting Frequency Response for Various C
6
2
-2
-6
Normalized Gain (dB)
VS=±15V
AV=10
-10
RF=500Ω
RL=500Ω
-14
1M 10M 100M 1G
Supply Current vs Supply Voltage
12
9.6
7.2
4.8
Supply Current (mA)
2.4
0
0
CL=29.4pF
CL=16.4pF
CL=11.4pF
CL=5.1pF
CL=1.2pF
Frequency (Hz)
3 12 15
6 9
Supply Voltage (±V)
L
3dB Bandwidth vs Supply Voltage
250
200
150
100
Bandwidth (MHz)
50
0
AV=10
AV=-10
AV=50 AV=-50AV=20AV=-20
2 4 6 8 10 12 14 16
VS (±V)
Peaking vs Supply Voltage
3
2.5
2
1.5
Peaking (dB)
1
0.5
0
2 4 6 8 10 12 14 16
AV=10
AV=-10
AV=50AV=-50 AV=20AV=-20
VS (±V)
6
Page 7
Typical Performance Curves
Small Signal Step Response Small Signal Step Response
EL2125C - Preliminary
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
VINx2
20mV/div
V
O
Large-Signal Step Response
Output Voltage (0.5V/div)
10ns/div
Time (20ns/div)
VS=±5V
RL=500Ω
RF=180Ω
AV=10
CL=5pF
VS=±5V
RL=500Ω
RF=180Ω
AV=10
CL=5pF
VINx2
20mV/div
V
O
Large-Signal Step Response
Output Voltage (0.5V/div)
10ns/div
Time (20ns/div)
VS=±15V
RL=500Ω
RF=180Ω
AV=10
CL=5pF
VS=±15V
RL=500Ω
RF=180Ω
AV=10
CL=5pF
1MHz Harmonic Distortion vs Output Swing
-40
VS=±5V
RF=180Ω
-50
AV=10
RL=500Ω
-60
-70
-80
Distortion (dBc)
-90
-100
-110
0 6 7
2nd H
4 52 31
V
(VPP)
OUT
3rd H
1MHz Harmonic Distortion vs Output Swing
-30
VS=±15V
-40
RF=180Ω
AV=10
-50
RL=500Ω
-60
-70
-80
Distortion (dBc)
-90
-100
-110
0 5 25
2nd H
3rd H
10 15 20
V
(VPP)
OUT
7
Page 8
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
Typical Performance Curves
EL2125C - Preliminary
Total Harmonic Distortion vs Frequency
-30
VS=±5V
VO=2V
-40
-50
-60
THD (dBc)
-70
-80
-90
Settling Time (ns)
PP
AV=10
RF=180Ω
RL=500Ω
1k 10k 100M
Settling Time vs Accuracy
60
50
40
30
VS=±5V
VO=2V
20
10
0
0.1 1 10
100k 1M 10M
Frequency (Hz)
VS=±15V
VO=5V
PP
VS=±15V
VO=2V
PP
VS=±5V
VO=5V
PP
Accuracy (%)
PP
Voltage and Current Noise vs Frequency
100
10
1
0.1
Voltage Noise (nV/√Hz), Current Noise (pA/√Hz)
10 100 1k 10k 100k
Group Delay
14
VS=±15V
10
6
2
Group Delay (ns)
-2
-6
1 400
VN, VS=±15V
VN, VS=±5V
Frequency (Hz)
AV=20
AV=10
10 100
Frequency (MHz)
IN, VS=±5V
IN, VS=±15V
CMRR
-10
-30
-50
-70
CMRR (dB)
-99
-110
10 100M
100 10M1k 10k 100k 1M
Frequency (Hz)
PSRR
110
90
70
PSRR+
50
PSRR (dB)
30
10
10K
100K 100M
PSRR-
1M
Frequency (Hz)
10M
600M
8
Page 9
Typical Performance Curves
EL2125C - Preliminary
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
Closed Loop Output Impedance vs Frequency
100
10
1
R out(¾)
0.1
0.01
0.001
10k
Frequency (Hz)
Bandwidth vs Temperature
200
160
120
80
-3dB Bandwidth (MHz)
40
0
100M100k 1M 10M
-40 160
Peaking
Temperature (°C)
Bandwidth
800 40 120
3.5
3
2.5
2
1.5
Peaking (dB)
1
0.5
0
9
Page 10
EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
EL2125C - Preliminary
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described
herein and makes no representations that they are free from patent infringement.
WARNING - Life Support Policy
Elantec, Inc. products are not authorized for and should not be used
within Life Support Systems without the specific written consent of
Elantec, Inc. Life Support systems are equipment intended to sup-
Elantec Semiconductor, Inc.
675 Trade Zone Blvd.
Milpitas, CA 95035
Telephone: (408) 945-1323
(888) ELANTEC
Fax: (408) 945-9305
European Office: +44-118-977-6020
Japan Technical Center: +81-45-682-5820
port or sustain life and whose failure to perform when properly used
in accordance with instructions provided can be reasonably
expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support
Systems are requested to contact Elantec, Inc. factory headquarters
to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective
components and does not cover injury to persons or property or
other consequential damages.
October 2, 2001
10
Printed in U.S.A.
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