Page 1
EL2002C
Low Power, 180 MHz Buffer Amplifier
EL2002C December 1995 Rev D
Features
# 180 MHz bandwidth
# 2000 V/ms slew rate
# Low bias current, 3 mA typical
# 100 mA output current
# 5 mA supply current
# Short circuit protected
# Low cost
# Stable with capacitive loads
# Wide supply range
g
5V tog15V
# No thermal runaway
Applications
# Op amp output current booster
# Cable/line driver
# A/D input buffer
# Isolation buffer
Ordering Information
Part No. Temp. Range Package Outline
EL2002ACN 0§Ctoa75§C P-DIP MDP0031
EL2002CM 0§Ctoa75§C 20-Lead SOL MDP0027
EL2002CN 0§Ctoa75§C P-DIP MDP0031
General Description
The EL2002 is a low cost monolithic, high slew rate, buffer
amplifier. Built using the Elantec monolithic Complementary
Bipolar process, this patented buffer has a
b
3 dB bandwidth of
180 MHz, and delivers 100 mA, yet draws only 5 mA of supply
current. It typically operates from
will work with as little as
g
5V.
g
15V power supplies but
This high speed buffer may be used in a wide variety of applications in military, video and medical systems. Typical examples
include fast op-amp output current boosters, coaxial cable drivers and A/D converter input buffers.
Elantec’s products and facilities comply with MIL-I-45208A,
and other applicable quality specifications. For information on
Elantec’s processing, see the Elantec document, QRA-1: Elan-
tec’s Processing, Monolithic Integrated Circuits.
Connection Diagrams
EL2002 DIP Pinout
Ý
2002– 1
Top View
EL2002 SOL Pinout
Top View
Manufactured Under U.S. Patent No. 4,833,424 and U.K. Patent No. 2217134.
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
©
1989 Elantec, Inc.
2002– 2
Page 2
EL2002C
Low Power, 180 MHz Buffer Amplifier
Absolute Maximum Ratings
T
Operating Temperature Range:
a
V
S
V
IN
I
IN
P
D
Supply Voltage (V
Input Voltage (Note 1)
Input Current (Note 1)
Power Dissipation (Note 2) See Curves
Output Short Circuit
b
Vb)
g
18V or 36V
g
15V or V
g
50 mA
Duration (Note 3) Continuous
Important Note:
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually
performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test
equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore T
Test Level Test Procedure
I 100% production tested and QA sample tested per QA test plan QCX0002.
II 100% production tested at T
III QA sample tested per QA test plan QCX0002.
IV Parameter is guaranteed (but not tested) by Design and Characterization Data.
V Parameter is typical value at T
T
MAX
and T
per QA test plan QCX0002.
MIN
Electrical Characteristics
e
25§C and QA sample tested at T
A
e
25§C for information purposes only.
A
e
g
V
15V, R
S
Test Conditions Limits
Parameter Description
V
Load Temp Min Typ Max
IN
V
OS
Offset Voltage 0
EL2002A/EL2002AC
EL2002/EL2002C 0
I
IN
Input Current 0
EL2002A/EL2002AC
EL2002/EL2002C 0
R
IN
A
V1
A
V2
Input Resistance
Voltage Gain
Voltage Gain
a
12V 100X 25§C13 IMX
g
12V
g
10V 100X 25§C 0.85 0.93 I V/V
%
%
%
%
%
A
S
T
T
e
50X, unless otherwise specified
S
EL2002AC/EL2002C 0
Operating Junction Temperature 150§C
J
Storage Temperature
ST
e
A
25§C,
b
e
T
J
EL2002AC
EL2002C
Test
Level
25§C
T
MIN,TMAX
25§C
T
MIN,TMAX
25§C
T
MIN,TMAX
25§C
T
MIN,TMAX
T
MIN,TMAX
b
15 5
b
20
b
40 10
b
50
b
10 3
b
15
b
15 5
b
20
0.1 III MX
a
15 I mV
a
20 III mV
a
40 I mV
a
50 III mV
a
10 I mA
a
15 III mA
a
15 I mA
a
20 III mA
25§C 0.990 0.998 I V/V
T
MIN,TMAX
T
MIN,TMAX
0.985 III V/V
0.83 III V/V
Ctoa75§C
§
65§Ctoa150§C
e
TA.
C
Units
TDis 3.3in
2
Page 3
EL2002C
Low Power, 180 MHz Buffer Amplifier
e
Electrical Characteristics
g
V
S
Test Conditions Limits
Parameter Description
A
V
R
I
I
V3
O
OUT
OUT
S
V
Voltage Gain
e
with V
S
g
5V
g
Output Voltage Swingg12V 100X 25§C
Output Resistance
Output Current
g
g
Supply Current 0
Load Temp Min Typ Max
IN
3V 100X 25§C 0.83 0.91 I V/V
2V 100X 25§C 8 13 I X
12V (Note 4) 25§C
PSRR Supply Rejection, 0
(Note 5)
t
r
t
d
SR Slew Rate, (Note 6)
Note 1: If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceedsg7.5V then the input
Note 2: The maximum power dissipation depends on package type, ambient temperature and heat sinking. See the characteristic
Rise Time 0.5V 100X 25§C 2.8 V ns
Propagation Delay 0.5V 100X 25§C 1.5 V ns
g
10V 100X 25§C 1200 2000 IV V/ms
g
current must be limited to
50 mA. See the applications section for more information.
curves for more details.
15V, R
%
%
e
50X, unless otherwise specified Ð Contd.
S
EL2002AC
EL2002C
Test
Level
T
MIN,TMAX
T
MIN,TMAX
T
MIN,TMAX
T
MIN,TMAX
0.80 III V/V
g
g
10
11 I V
g
9.5 III V
15 III X
a
100a160 I mA
g
95 III mA
25§C 5 7.5 II mA
T
MIN,TMAX
10 III mA
25§C6075 I dB
T
MIN,TMAX
50 III dB
Units
Note 3: A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited.
a
Note 4: Force the input to
output.
Note 5: V
is measured at V
OS
simultaneously.
Note 6: Slew rate is measured between V
12V and the output toa10V and measure the output current. Repeat withb12 VINandb10V on the
aea
S
OUT
4.5V, V
ea
beb
S
5V andb5V.
4.5V and V
aea
S
18V, V
be
18V. Both supplies are changed
S
TDis 3.5in
3
Page 4
EL2002C
Low Power, 180 MHz Buffer Amplifier
Typical Performance Curves
Offset Voltage
vs Temperature
Supply Current
vs Supply Voltage
Voltage Gain
vs Temperature
Voltage Gain
vs Input Voltage
Output Voltage Swing
vs Temperature
Voltage Gain
vs Source Resistance
Input Bias Current
vs Input Voltage
at Various Temperatures
Input Bias Current
vs Input Voltage
4
g
Slew Rate vs
Supply Voltage
2002– 4
Page 5
EL2002C
Low Power, 180 MHz Buffer Amplifier
Typical Performance Curves
Slew Rate
vs Load Capacitance
Voltage Gain
vs Frequency for Various
Capacitive Loads; R
L
e %
Ð Contd.
Voltage Gain vs Frequency
for Various Resistive Loads
Phase Shift vs Frequency
for Various Capacitive Loads
Voltage Gain
vs Frequency for Various
Capacitive Loads; R
b
3 dB Bandwidth
vs Supply Voltage
e
L
100X
Power Supply Rejection Ratio
vs Frequency
Output Impedance vs Frequency Reverse Isolation vs Frequency
2002– 5
5
Page 6
EL2002C
Low Power, 180 MHz Buffer Amplifier
Typical Performance Curves
Small Signal Output Resistance
vs Output Current
Ð Contd.
8-Lead Plastic DIP
Maximum Power Dissipation
vs Ambient Temperature
Short Circuit Current
vs Temperature
20-Lead SOL
Maximum Power Dissipation
vs Ambient Temperature
Large Signal Response
OUTPUT
e
100X
R
L
e
10 pF
C
L
e
20 MHz
f
2002– 8
2002– 6
Small Signal Response
OUTPUT
e %
R
L
e
C
220 pF
L
e
5 MHz
f
2002– 9
6
Page 7
EL2002C
Low Power, 180 MHz Buffer Amplifier
Burn-In Circuit
2002– 10
Simplified Schematic
2002– 11
Application Information
The EL2002 is a monolithic buffer amplifier built
on Elantec’s proprietary Complementary Bipolar
process that produces NPN and PNP transistors
with essentially identical DC and AC characteristics. The EL2002 takes full advantage of the
complementary process with a unique circuit
topology.
Elantec has applied for two patents based on the
EL2002’s topology. The patents relate to the base
drive and feedback mechanism in the buffer. This
feedback makes 2000 V/ms slew rates with 100X
loads possible with very low supply current.
Power Supplies
The EL2002 may be operated with single or split
supplies with total voltage difference between
g
10V (
to use equal split value supplies. For example
b
from
Bypass capacitors from each supply pin to
ground are highly recommended to reduce supply
ringing and the interference it can cause. At a
minimum, 1 mF tantalum capacitor with short
leads should be used for both supplies.
5V) and 36V (g18V). It is not necessary
5V anda12V would be excellent for signals
b
2V toa9V.
Input Characteristics
The input to the EL2002 looks like a resistance in
parallel with about 3.5 pF in addition to a DC
bias current. The DC bias current is due to the
miss-match in beta and collector current between
the NPN and PNP transistors connected to the
input pin. The bias current can be either positive
or negative. The change in input current with input voltage (R
beta and the internal boost. R
pear negative over portions of the input range;
typical input current curves are shown in the
characteristic curves. Internal clamp diodes from
the input to the output are provided. These diodes protect the transistor base emitter junctions
and limit the boost current during slew to avoid
saturation of internal transistors. The diodes begin conduction at about
differential. When that happens the input resistance drops dramatically. The diodes are rated at
50 mA. When conducting they have a series resistance of about 20X. There is also 100X in series
with the input that limits input current. Above
g
7.5V differential input to output, additional se-
ries resistance should be added.
) is affected by the output load,
IN
g
can actually ap-
IN
2.5V input to output
Source Impedance
The EL2002 has good input to output isolation.
When the buffer is not used in a feedback loop,
capacitive and resisitive sources up to 1 MHz
present no oscillation problems. Care must be
used in board layout to minimize output to input
coupling. CAUTION: When using high source
impedances (R
rors can be observed due to output offset, load
resistor, and the action of the boost circuit. See
typical performance curves.
7
l
100 kX), significant gain er-
S
Page 8
EL2002C
Low Power, 180 MHz Buffer Amplifier
EL2002 Macromodel
* Connections:
*
*
*
*
.subckt M2002 2 1 4 7
* Input Stage
e1100201.0
r1 10 0 1K
rh 10 11 150
ch 11 0 2pF
rc 11 12 100
cc 12 0 3pF
e2 13 0 12 0 1.0
* Output Stage
q141314qp
q211315qn
q311416qn
q441519qp
r2 16 7 1
r3 19 7 1
i11142mA
i2 15 4 2mA
* Bias Current
a
iin
2 0 3uA
* Models
.model qn npn(is
.model qp pnp(is
.ends
a
input
a
Vsupply
l
ll
b
Vsupply
lll
llll
e5eb
15 bfe150 rbe200 ptfe45 tfe0.1nS)
e5eb
15 bfe150 rbe200 ptfe45 tfe0.1nS)
TABWIDE
output
TDis 3.9in
8
Page 9
EL2002C
Low Power, 180 MHz Buffer Amplifier
EL2002 Macromodel
Ð Contd.
2002– 12
9
Page 10
BLANK
10
Page 11
BLANK
11
Page 12
EL2002C
Low Power, 180 MHz Buffer Amplifier
EL2002CDecember 1995 Rev D
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes
in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any
circuits described herein and makes no representations that they are free from patent infringement.
WARNING Ð Life Support Policy
Elantec, Inc. products are not authorized for and should not be
used within Life Support Systems without the specific written
consent of Elantec, Inc. Life Support systems are equipment in-
Elantec, Inc.
1996 Tarob Court
Milpitas, CA 95035
Telephone: (408) 945-1323
(800) 333-6314
Fax: (408) 945-9305
European Office: 44-71-482-4596
tended to support or sustain life and whose failure to perform
when properly used in accordance with instructions provided can
be reasonably expected to result in significant personal injury or
death. Users contemplating application of Elantec, Inc. products
in Life Support Systems are requested to contact Elantec, Inc.
factory headquarters to establish suitable terms & conditions for
these applications. Elantec, Inc.’s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages.
Printed in U.S.A.12
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