Page 1
DNA30E2200PZ
High Voltage Standard Rectifier
Single Diode
Part number
DNA30E2200PZ
V= V
RRM
I= A
FAV
VV1.24
F
2200
30
=
Backside: anode
1 3
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
TO-263 (D2Pak-HV)
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
20130325aData according to IEC 60747and per semiconductor unless otherwise specified
Page 2
DNA30E2200PZ
j
min.
Ratings
typ. max.
2300
40T = 25°C
1.26
1.53
1.63
30
Unit
µA
mA1.5V = V
Rectifier
Symbol Definition
V
RSM
V
RRM
I
R
V
F
I
FAV
max. non-repetitive reverse blocking voltage
max. repetitiv e re verse blocking v ol tage
reverse current
forward voltage drop
average forward current
Conditions
2200
V = V
R
2200
R
30
I = A
F
I = AF60
I = A
30
F
I = AF60
T = °C
140
C
T = 25°C
VJ
T = 25°C
VJ
VJ
T = °C
150
VJ
T = 25°C
VJ
150
VJ
T = °C
175
VJ
d =rectangular 0.5
V
F0
r
F
R 0.7 K/W
thJC
R K/W
thCH
P
tot
I
FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine T = 45°C
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t T = 45°C
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
unction capacitance
V = V;700 T = 25°Cf = 1 MHz
R
175
VJ
C
VJ
V = 0 V
R
T = °C
150
VJ
V = 0 V
R
VJ
V = 0 V
R
T = °C150
VJ
V = 0 V
R
VJ
0.25
13.4
mΩ
210 WT = 25°C
370
400
315
340
685
A²s
665
A²s
495
A²s
480
A²s
7
pF
V
V2200
V
V
V1.24T = °C
V
A
V0.83T = °C
A
A
A
A
IXYS reserves the right to change limits, conditions and dimensions.
20130325aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
Page 3
DNA30E2200PZ
n
g
)
Package
TO-263 (D2Pak-HV
Ratings
Symbol Definition typ. max.min.Conditions
I
RMS
T
VJ
T
op
T
stg
RMS current
virtual junction temperature
operation temperature
storage temperature
per terminal
-55
-55
Weight g1.5
F
C
d
Spp/App
d
Spb/Apb
Part No.
Logo
Assembly Line
Date Code
Assembly Code
mounting force w i th clip
creepage distance on surface | striking distance through air
Product Marki
XXXXXXXXX
IXYS
Zyyww
000000
terminal to terminal
terminal to backside
Part number
D
Diode
=
N
High Voltage Standard Rectifier
=
A
(>= 2000V)
=
30
Current Rating [A]
=
E
Single Diode
=
2200
Reverse Voltage [V]
=
PZ
TO-263AB (D2Pak) (2HV)
=
20
4.2
4.7
35 A
150-55
Unit
°C175
°C
°C150
N60
mm
mm
DNA30E2200PZ 514460Tape & Reel 800DNA30E2200PZStandard
Similar Part Package Voltage class
DNA30EM2200PZ TO-263AB (D2Pak) (2HV) 2200
DNA30E2200PA TO-220AC 2200
DNA30E2200FE
DNA30E2200IY
Equivalent Circuits for Simulation
V
I
V
0 max
R
0 max
IXYS reserves the right to change limits, conditions and dimensions.
R
0
0
threshold voltage
slope resistance *
© 2013 IXYS all rights reserved
Rectifier
10.2
i4-Pac (2HV)
TO-262 (I2Pak) (2HV)
* on die level
T =
VJ
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
2200
2200
175 °C
V0.83
mΩ
20130325aData according to IEC 60747and per semiconductor unless otherwise specified
Page 4
Outlines TO-263 (D2Pak-HV)
DNA30E2200PZ
E
e1
31
2x e
W
L1
D
10.92
(0.430)
c2
A1
A2
L
A
c
mm (Inches)
H
2x b2
E1
4
Supplier
Option
D2
2x b
Dim.
A1
A2
b2 1.14 1.40 0.045 0.055
c2 1.14 1.40 0.045 0.055
D1 8.00 8.89 0.315 0.350
D1
D2
E1 6.22 8.50 0.245 0.335
e1
L1 1.02 1.68 0.040 0.066
Millimeter Inches
min max min max
A 4.06 4.83 0.160 0.190
typ. 0.10 typ. 0.004
2.41 0.095
b 0.51 0.99 0.020 0.039
c 0.40 0.74 0.016 0.029
D 8.38 9.40 0.330 0.3 70
2.3 0.091
E 9.65 10.41 0.380 0.410
2,54 BSC 0,100 BSC
e
4.28 0.169
H 14.61 15.88 0.575 0.625
L 1.7 8 2.79 0.070 0.1 10
typ.
W
0.02
0.040
0.0008
All dimensions conform with
and/or w ithin JEDEC standard .
typ.
0.002
3.81
(0.150)
2.54 (0.100)
1.78
(0.07)
9.02
(0.355)
3.05
(0.120)
Recommended min. foot print
1 3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
20130325aData according to IEC 60747and per semiconductor unless otherwise specified
Page 5
Rectifier
60
40
I
F
I
FSM
300
250
TVJ= 45°C
DNA30E2200PZ
3
10
VR = 0 V
2
I
t
TVJ =45°C
[A]
20
TVJ= 150°C
= 125°C
T
VJ
T
= 25°C
VJ
0
0.5 1.0 1.5 2.0
V
[V]
F
Fig. 1 Forward current versus
voltage drop per diode
50
40
dc =
1
0.5
0.4
30
0.33
0.17
P
tot
0.08
20
[W]
10
[A]
200
150
TVJ =150°C
50 Hz, 80% V
0.001 0.01 0.1 1
RRM
t[s]
Fig. 2 Surge overload current
R
thKA
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
2
[A
s]
2
10
Fig. 3 I
40
=
30
dc =
20
10
1
0.5
0.4
0.33
0.17
0.08
I
F(AV)M
[A]
TVJ= 150°C
23456789011
t[ms]
2
t versus time per diode
0
0 102030
I
F(AV)M
0 25 50 75 100 125 150 175 200
T]A[
[°C]
amb
Fig. 4 Power dissipation vs. direct output current & ambient temperature
0.8
0.6
Z
thJC
0.4
[K/W]
0.2
0.0
1 10 100 1000 10000
t[ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
0
0 25 50 75 100 125 150 175 200
T
[°C]
C
Fig. 5 Max. forward current versus
case temperature
Constants for Z
iR
(K/W) ti(s)
thi
calculation:
thJC
1 0.03 0.0003
2 0.072 0.0065
3 0.131 0.027
4 0.367 0.105
50.1 0.8
20130325aData according to IEC 60747and per semiconductor unless otherwise specified
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