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N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
BV
/R
DSX
BV
DGX
250V 20Ω 200mA DN3125NW
Die in wafer form.
*
DS(ON)
(max) (min) Die*
I
DSS
Order Number / Package
DN3125
Features
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSX
DGX
1
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Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
V
GS(OFF)
∆V
I
GSS
I
D(OFF)
DSX
GS(OFF)
Drain-to-Souce Breakdown Voltage 250 V VGS = -5.0V, ID = 100µA
Gate-to-Source OFF Voltage -1.5 -3.5 V V
Change in V
with Temperature 4.5 mV/°CV
GS(OFF)
Gate Body Leakage Current 100 nA V
= 15V, ID = 10µA
DS
= 15V, ID = 10µA
DS
= ±20V, V
GS
DS
Drain-to-Source Leakage Current 1.0 µAVGS = -5.0V, VDS = Max Rating
1.0 mA V
= -5.0V, V
GS
TA = 125°C
DS
DN3125
= 0V
= 0.8 Max Rating
I
DSS
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Saturated Drain-to-Source Current 200 mA VGS = 0V, V
Static Drain-to-Source 20
ON-State Resistance
Change in R
with Temperature 1.1 %/°CVGS = 0V, ID = 150mA
DS(ON)
20 V
Forward Transconductance 150 mm ID = 100mA, VDS=10V
Input Capacitance 60 120
Common Source Output Capacitance 6.0 15 pF
Reverse Transfer Capacitance 3.0 10
Turn-ON Delay Time 10
Rise Time 15 ID = 150mA,
Turn-OFF Delay Time 15 R
Fall Time 20 VGS = 0V to -10V
Diode Forward Voltage Drop 1.8 V VGS = -5.0V, I
Reverse Recovery Time 800 ns VGS = -5.0V, I
Ω
ns
VGS = 0V, ID = 150mA
= -0.8V, ID = 50mA
GS
Ω
V
= -5.0V, VDS = 25V,
GS
f =1.0Mhz
VDD = 25V,
= 25Ω,
GEN
DS
SD
SD
= 15V
= 150mA
= 150mA
Switching Waveforms and Test Circuit
0V
INPUT
10%
-10V
V
DD
OUTPUT
0V
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
t
d(ON)
t
(ON)
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
1235 Bordeaux Drive, Sunnyvale, CA 94089
V
DD
R
L
OUTPUT
D.U.T.
12/13/010
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
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