Page 1
N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
BV
/R
DSX
BV
DGX
350V 35Ω 180mA DN3135K1 DN3135N8 DN3135NW
*
Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
** Same as SOT-23. Products skipped on 3000 piece carreir tape reels.
*** Die in wafer form.
DS(ON)
(max) (min) TO-236AB** TO-243AA* Die***
I
DSS
Order Number / Package
Product marking for TO-243AA:
DN3135
DN3135
Product marking for SOT-23:
Features
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
DN1S*
Where *= 2-week alpha date code
Where *= 2-week alpha date code
N1S*
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Distance of 1.6 mm from case for 10 seconds.
*
10/23/00
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSX
DGX
Gate Source
TO-236AB
(SOT-23)
top view
Note: See Package Outline section for dimensions.
1
G
D
S
TO-243AA
(SOT-89)
D
Page 2
Thermal Characteristics
DN3135
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja
IDR*I
@ TA = 25°C °C/W °C/W
TO-236AB 72mA 300mA 0.36W 200 350 72mA 300mA
TO-243AA 135mA 300mA 1.3W
* I
(continuous) is limited by max rated Tj.
D
†
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
increase possible on ceramic substrate.
D
†
34 97
†
135mA 300mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSX
V
GS(OFF)
∆V
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Souce Breakdown Voltage 350 V VGS = -5.0V, ID = 100µA
Gate-to-Source OFF Voltage -1.5 -3.5 V V
Change in V
with Temperature 4.5 mV/°CV
GS(OFF)
Gate Body Leakage Current 100 nA V
= 15V, ID = 10µA
DS
= 15V, ID = 10µA
DS
= ±20V, V
GS
DS
= 0V
Drain-to-Source Leakage Current 1.0 µAVGS = -5.0V, VDS = Max Rating
1.0 mA V
= -5.0V, V
GS
TA = 125°C
Saturated Drain-to-Source Current 180 mA VGS = 0V, V
Static Drain-to-Source 35
ON-State Resistance
Change in R
with Temperature 1.1 %/°CVGS = 0V, ID = 150mA
DS(ON)
35 V
Ω
Forward Transconductance 140 mm ID = 100mA, VDS=10V
VGS = 0V, ID = 150mA
= -0.8V, ID = 50mA
GS
Ω
= 0.8 Max Rating
DS
= 15V
DS
Input Capacitance 60 120
Common Source Output Capacitance 6.0 15 pF
VGS = -5.0V, VDS = 25V,
f =1.0Mhz
Reverse Transfer Capacitance 3.0 10
Turn-ON Delay Time 10
Rise Time 15 ID = 150mA,
ns
Turn-OFF Delay Time 15 R
VDD = 25V,
= 25Ω,
GEN
Fall Time 20 VGS = 0V to -10V
Diode Forward Voltage Drop 1.8 V VGS = -5.0V, I
Reverse Recovery Time 800 ns VGS = -5.0V, I
= 150mA
SD
= 150mA
SD
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
-10V
V
0V
10%
t
(ON)
t
t
d(ON)
r
DD
0V
10%
90%
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
V
DD
R
PULSE
GENERATOR
R
gen
INPUT
L
OUTPUT
D.U.T.
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
10/23/00
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