Datasheet DMV56-F5, DMV56, DMV32-F5, DMV32, DMV16-F5 Datasheet (SGS Thomson Microelectronics)

DMV series

®

August 1999 - Ed: 2A

DAMPER + MODULATION DIODE FOR VIDEO

Symbol Parameter

Value

Unit

MODUL DAMPER

V

RRM

Repetitive peak reverse voltage 600 1500 V

I

FSM

Surge non repetitive forward current tp = 10 m s

sinusoidal

DMV16 50 50 A
DMV32 60 75
DMV56 60 80

T

stg

Storage temperature range - 40 to + 150 °C

T

j

Maximum operating junction temperature 150

TURBOSWITCH is a trademark of STMicroelectronics

ABSOLUTE RATINGS

(limiting values, per diode)

Insulated TO-220AB

(Bending option F5 available)

FULL KIT IN ONE PACKAGE
HIGH BREAKDOWN VOLTAGE CAPABILITY
VERY FAST RE COVE RY DIODE
SPECIFIED TURN ON SWITCHING

CHARACTERISTICS
LOW STATIC AND PEAK FORWARD

VOLT AG E DRO P FOR LOW DISSIP ATION
INSULATED VERSION:

Insulated voltage = 2500 V

RMS

Capacitance = 7 pF
PLANAR TECHNOLOGY ALLOW ING HIGH

QUALITY AND BEST ELECTRICAL
CHARACTERISTICS

OUTSTANDING PERFORMANCE OF WELL
PROVEN DTV AS DAMPER AND
TURBOSWITCH

TM

AS M ODULA TION

FEATURES AND BENE FITS

High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.

The insulated TO-220AB package includes both
the DAMPER diode and the MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks to
the internal ceramic insulation layer.

DESCRIPTION

MODUL DAMPER

I

F(AV)

3 A & 6 A 5 A & 6 A

V

RRM

600 V 1500 V

t

rr

50 ns 135 ns

V

F

(max) 1.5 V 1.35 V

MAIN PRODUCT CHARACTERISTI CS

1

2

3

DAMPER MODULA TION

123

1/9

Symbol Parameter

Value

Unit

DMV16 DMV32 DMV56

R

th(j-c)

Damper junction to case 5.3 4.8 3.6

°

C/W

R

th(j-c)

Modulation junction to case

6.5 5.3 5.3

R

th(c)

Coupling

0.2 0.2 0.2

R

th(j-c)

Total as per full I

F(AV)

maximum ratings 6.0 5.1 4.5

THERMAL RESISTANCES

Symbol Parameter Test conditions

Value

Unit

Tj = 25°C Tj = 125°C

Typ. Max. Typ. Max.

V

F

* Forward voltage drop IF = 5 A

DMV16

1.6 1.0 1.5 V

I

F

= 6 A

DMV32

1.5 1.1 1.35

I

F

= 6 A

DMV56

1.8 1.1 1.5

I

R

** Revers e leak age c urrent VR = V

RRM

DMV16

60 100 500

µ

A

DMV32

100 100 1000

DMV56

100 100 1000

Pulse test : * tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
DMV16: P = 1.14 x I

F(AV)

+ 0.072 x I

F2(RMS)

DMV32: P = 1.069 x I

F(AV)

+ 0.047 x I

F2(RMS)

DMV56: P = 1.15 x I

F(AV)

+ 0.059 x I

F2(RMS)

STATIC ELECTRICAL CHARACTE RISTICS OF THE DAMP ER DIODES

Symbol Parameter Test conditions

Value

UnitTj = 25°C Tj = 125°C

Typ. Max. Typ. Max.

V

F

* Forward voltage drop IF = 3A DMV16 1.4 1 1.3 V

I

F

= 5A DMV32 1.75 1.2 1.5

I

F

= 5A DMV56 1.75 1.2 1.5

I

R

**

Reverse leakage current V

R

= 480V

DMV16 20 150 500

µ

A
DMV32 100 600 2000
DMV56 100 600 2000

Pulse test : * tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
DMV16: P = 1.06 x I

F(AV)

+ 0.08x I

F2(RMS )

DMV32: P = 1.15 x I

F(AV)

+ 0.07 x I

F2(RMS)

DMV56: P = 1.15 x I

F(AV)

+ 0.07 x I

F2(RMS)

STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE

®

DMV series

2/9

Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

rr

Revers e recovery t i me IF = 100mA

I

R

= 100mA

I

RR

= 10mA

Tj = 25° C

DMV16 1500 ns
DMV32 850
DMV56 750

t

rr

Revers e recovery t i me IF = 1A

dI

F

/dt = -50A/µs

V

R

= 30V

Tj = 25°C DMV16 200 300 ns

DMV32 130 175
DMV56 110 135

RECOVERY CHARAC TERISTICS OF THE DAM PER DIODE

Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

fr

Forward re covery ti me IF = 6A

dI

F

/dt = 80A/µs

V

FR

= 3V

Tj = 100°C

DMV16 350 ns
DMV32 570
DMV56 350

V

FP

Peak forward voltage IF = 6A

dI

F

/dt = 80A/µs

Tj = 100°C DMV16 25 34 V

DMV32 21 28
DMV56 19 26

TURN-ON SWITCHING CHARACT ERISTICS OF THE DAMPER DIODE

Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

rr

Revers e recovery t i me IF = 100mA

I

R

= 100mA

I

RR

= 10mA

Tj = 25°C DMV16 210 650 ns

DMV32 110 350
DMV56 110 350

t

rr

Revers e recovery t i me IF = 1A

dI

F

/dt = -50A/µs

V

R

= 30V

Tj = 25°C DMV16 95 ns

DMV32 50
DMV56 50

RECOVERY CHARAC TERISTICS OF THE MOD ULATION DIODE

Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

fr

Forward re covery ti me IF = 3A

dI

F

/dt = 80A/µs

V

FR

= 3V

Tj = 100°C DMV16 500 ns

I

F

= 5A

dI

F

/dt = 80A/µs

V

FR

= 3V

DMV32 300
DMV56 300

V

FP

Peak forward voltage IF = 3A

dI

F

/dt = 80A/µs

Tj = 100°C DMV16 8 V

I

F

= 5A

dI

F

/dt = 80A/µs

DMV32 10
DMV56 10

TURN-ON SWITCHING CHARACT ERISTICS OF THE MODULATION DIODE

®

DMV series

3/9

ORDERING INFORMATION

DMVxx / F5

LEAD BENDING (OPTION)

DAMPER AND MODULATION DIODES FOR VIDEO

0123456

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

PF(av)(W)

DMV16

DMV32

DMV56

Ip(A)

Fig. 1-1:

Power dissipation versus peak forward
current (triangular waveform, δ=0.45) (damper
diode.)

0123456

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

PF(av)(W)

DMV16

DMV32/DMV56

Ip(A)

Fig. 1-2:

Power dissipation versus peak forward
current (triangular waveform, δ=0.45) (modulation
diode)

0 25 50 75 100 125 150

0

1

2

3

4

5

6

7

IF(av)(A)

Rth(j-a)=Rth(j-c)

DMV16

DMV32

DMV56

Tamb(°C)

T

δ

=tp/T

tp

Fig. 2-1:

Average forward current versus ambient

temperature (damper diode).

0 25 50 75 100 125 150

0

1

2

3

4

5

6

IF(av)(A)

DMV32/DMV56

DMV16

Rth(j-a)=Rth(j-c)

Tamb(°C)

T

δ

=tp/T

tp

Fig. 2-2:

Average forward current versus ambient
temperature (modulation diode).

®

DMV series

4/9

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

0.1

1.0

10.0

20.0

IFM(A)

Typ ical

Tj=125°C

Maximum

Tj=25°C

Maximum
Tj=125°C

VFM(V)

Fig. 3-1:

Forward voltage drop versus forward

current (damper diode) DMV16.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

0.1

1.0

10.0

50.0

IFM(A)

Typ ical

Tj=125°C

Maximum

Tj=25°C

Maximum
Tj=125°C

VFM(V)

Fig. 3-2:

Forward voltage drop versus forward

current (damper diode)DMV32.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

0.1

1.0

10.0

50.0

IFM(A)

Typ ical

Tj=125°C

Maximum

Tj=25°C

Maximum
Tj=125°C

VFM(V)

Fig. 3-3:

Forward voltage drop versus forward

current (damper diode)DMV56.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

0.1

1.0

10.0

20.0

IFM(A)

Typ ical

Tj=125°C

Maximum

Tj=25°C

Maximum
Tj=125°C

VFM(V)

Fig. 3-4:

Forward voltage drop versus forward

current (modulation diode)DMV16.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

0.1

1.0

10.0

20.0

IFM(A)

Typ ical

Tj=125°C

Maximum

Tj=25°C

Maximum
Tj=125°C

VFM(V)

Fig. 3-5:

Forward voltage drop versus forward

current (modulation diode)DMV32 and DMV56.

1E-3 1E-2 1E-1 1E+0

0.1

0.2

0.5

1.0

K=[Zth(j-c)/Rth(j-c)]

tp(s)

T

δ

=tp/T

tp

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 4:

Relative variation of thermal impedance

junction to case versus pulse duration.

®

DMV series

5/9

1E-3 1E-2 1E-1 1E+0

0

5

10

15

20

25

30

35

40

IM(A)

Tc=100°C

DMV16

DMV32/DMV56

I

M

t

δ

=0.5

t(s)

Fig. 5-2:

Non repetitive surge peak forward current

versus overload duration (modulation diode).

1E-3 1E-2 1E-1 1E+0

0

5

10

15

20

25

30

35

40

45

IM(A)

Tc=100°C

DMV56

DMV32

DMV16

t(s)

I

M

t

δ

=0.5

Fig. 5-1:

Non repetitive surge peak forward current

versus overload duration (damper diode).

0.1 0.2 0.5 1.0 2.0 5.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

Qrr(µC)

IF=IF(av)

90% confidence

Tj=125°C

DMV56

DMV32

DMV16

dIF/dt(A/µs)

Fig. 6-1:

Reverse recovery charges versus d

IF

/dt

(damper diode).

0.1 1.0 10.0 50.0

0

50

100

150

200

250

300

350

400

450

500

Qrr(nC)

IF=IF(av)

90% confidence

Tj=125°C

DMV32/DMV56

DMV16

dIF/dt(A/µs)

Fig. 6- 2:

Reverse recovery charges versus d

IF

/dt

(modulation diode).

0.1 0.2 0.5 1.0 2.0 5.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

IRM(A)

IF=IF(av)

90% confidence

Tj=125°C

DMV16

DMV32

DMV56

dIF/dt(A/µs)

Fig. 7-1:

Reverse recovery current versus d

IF

/dt

(damper diode).

0.1 1.0 10.0 100.0

0

1

2

3

4

5

6

7

8

9

10

IRM(A)

IF=IF(av)

90% confidence

Tj=125°C

DMV32/DMV56

DMV16

dIF/dt(A/µs)

Fig. 7-2:

Reverse recovery current versus d

IF

/dt

(modulation diode).

®

DMV series

6/9

0 20 40 60 80 100 120 140

0

5

10

15

20

25

30

35

40

45

50

VFP(V)

IF=IF(av)

90% confidence

Tj=125°C

DMV16

DMV32

DMV56

dIF/dt(A/µs)

Fig. 8-1:

Transient peak forward voltage versus

d

IF

/dt (damper diode).

0 20 40 60 80 100 120 140 160 180 200

0

2

4

6

8

10

12

14

16

18

20

VFP(V)

IF=IF(av)

90% confidence

Tj=125°C

DMV32/DMV56

DMV16

dIF/dt(A/µs)

Fig. 8-2:

Transient peak forward voltage versus
d

IF

/dt (modulation diode).

0 20 40 60 80 100 120 140

200

250

300

350

400

450

500

550

600

650

700

tfr(ns)

IF=IF(av)

90% confidence

Tj=125°C

Vfr=3V

DMV16/DMV32/DMV56

dIF/dt(A/µs)

Fig. 9-1:

Forward recovery time versus d

IF

/dt

(damper diode).

0 20 40 60 80 100 120 140 160 180 200

0

50

100

150

200

250

300

350

400

tfr(ns)

IF=IF(av)

90% confidence

Tj=125°C
Vfr=1.5V

DMV32/DMV56

DMV16

dIF/dt(A/µs)

Fig. 9-2:

Forward recovery time versus d

IF

/dt

(modulation diode).

0 20 40 60 80 100 120 140

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VFP,IRM,Qrr[Tj] /VFP,IRM,Qrr[Tj=125°C]

VFP

IRM

Qrr

Tj(°C)

Fig. 10:

Dynamic parameters versus junction

temperature (damper & modulation diodes).

1 10 100 200

1

10

100

VR(V)

C(pF)

Tj=25°C
F=1MHz

Damper diodes

Modulation diodes

DMV16

DMV32

DMV56

DMV16

DMV32/DMV56

Fig. 11:

Junction capacitance versus reverse

voltage applied (typical values).

®

DMV series

7/9

PACKAGE MEC HANICAL DA TA

TO-220AB F5 OPTION

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 15.20 15.90 0.598 0.625
a1 24.16 26.90 0.951 1.059
a3 1.65 2.41 0.064 0.094

B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

L 2.65 2.95 0.104 0.116
I2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
l4 15.80 16.80 0.622 0.661

16.40 typ. 0.645 typ.
M1 2.92 3.30 0.114 0.129
R1 1.40 typ. 0.055 typ.
R2 1.40 typ. 0.055 typ.

c2

B

a1

C

b2

l2

c2

a3

R2

R1

l3

b1

l4

A

F

L

I

e

c1

M1

Ø

cooling method: by conduction (c)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.

2.2mm

2.54mm

1mm

3.1mm

PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT

®

DMV series

8/9

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
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STMicroelectr oni cs products are not authorized for use as critical c om ponents i n l i fe s upport devices or systems without express written a p­proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroel ectronics

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Type M arking Package Weight Base q ty Delivery mode

DMV16

DMV16/F5

DMV16 TO-220AB 2.2 g. 50 Tube

DMV32

DMV32/F5

DMV32 TO-220AB 2.2 g. 50 Tube

DMV56

DMV56/F5

DMV56 TO-220AB 2.2 g. 50 Tube

Epoxy meets UL94, V0

PACKAGE ME CHANICAL D AT A

TO-220AB

M

B

l4

C

b2

a2

l2

c2

l3

b1

a1

A

F

L

I

e

c1

REF.

DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

cooling method: by conduc tion (c)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.

®

DMV series

9/9