Datasheet DMV1500L Datasheet (SGS Thomson Microelectronics)

®

DMV1500L

DAMPER + MODULATION DIODE FOR VIDEO

MAIN PRODUCT CHARACTERISTICS

MODUL DAMPER

I

F(AV)

V

RRM

t

(max) 50 ns 170ns

rr

V

(max) 1.4 V 1.5 V

F

3A 4A

600 V 1500 V

FEATURES AND BENEFITS

Fullkitinonepackage

■

■ High breakdown voltage capability

■ Very fast recovery diode

■ Specified turn on switching characteristics

■

Low static and peak forward voltage dropfor low
dissipation

■ Insulated version:

Insulated voltage = 2500 V

RMS

Capacitance = 7 pF

■

Planar technology allowing high quality and
best electrical characteristics

■

Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation

DAMPER MODULATION

123

3

2

1

Insulated TO-220AB

(Bending option F5 available)

DESCRIPTION

High voltage semiconductor especially designed
for horizontal deflection stageinstandardandhigh
resolution video display with E/W correction.

The insulated TO-220AB package includes both
theDAMPERdiodeandthe MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks
to the internal ceramic insulation layer.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter

V

RRM

I

FSM

T

stg

T

July 2001 - Ed: 3A

Repetitive peak reverse voltage
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature

j

Value

Unit

MODUL DAMPER

600 1500 V

35 50 A

-40to+150 °C
150

1/9

DMV1500L

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-c)

STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES

Damper junction to case
Modulation junction to case

5.5 °C/W
6

Value

Symbol Parameter Test conditions

Typ. Max. Typ. Max.

Forward voltage drop I

*

V

F

**

I

R

Pulse test : * tp = 380 µs, δ <2%

To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
P=1.2xI

Reverse leakage current V

**tp = 5 ms, δ <2%

+ 0.075 x I

F(AV)

F2(RMS)

=4A

F

= 1500V

R

1.2 1.7 1.1 1.5 V
100 100 1000 µA

STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE

Value

Symbol Parameter

Test

conditions

Typ. Max. Typ. Max.

Forward voltage drop I

*

V

F

**

I

R

Pulse test : * tp = 380 µs, δ <2%

To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
P=1.12xI

Reverse leakage current V

** tp = 5 ms, δ <2%

+ 0.092 x I

F(AV)

F2(RMS)

=3A

F

= 600V

R

1.8 1.1 1.4 V
20350µA

UnitTj = 25°C Tj = 125°C

UnitTj = 25°C Tj = 125°C

RECOVERY CHARACTERISTICS OF THE DAMPER DIODE

Symbol Parameter Test conditions

Reverse recovery time IF= 100mA

= 100mA

I

R

= 10mA

I

RR

Reverse recovery time IF=1A

/dt = -50A/µs

dI

F

= 30V

V

R

2/9

t

rr

t

rr

Tj = 25°C

Tj = 25°C

Value

Typ. Max.

Unit

850 ns

130 170 ns

®

RECOVERY CHARACTERISTICS OF THE MODULATION DIODE

DMV1500L

Symbol Parameter Test conditions

t

rr

t

rr

Reverse recovery time IF= 100mA

= 100mA

I

R

= 10mA

I

RR

Reverse recovery time IF=1A

/dt = -50A/µs

dI

F

= 30V

V

R

Tj = 25°C

Tj = 25°C

TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE

Symbol Parameter Test conditions

t

fr

V

FP

Forward recovery time IF=4A

/dt = 80A/µs

dI

F

=3V

V

FR

I

= 6.5A

F

/dt = 50A/µs

dI

F

=3V

V

FR

Peak forward voltage IF=4A

/dt = 80A/µs

dI

F

= 6.5A

I

F

/dt = 50A/µs

dI

F

Tj = 100°C

Tj = 25°C

Tj = 100°C

Tj = 25°C

Value

Typ. Max.

Unit

110 350 ns

50 ns

Value

Typ. Max.

Unit

450 ns

450

28 36 V

13 17

TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE

Symbol Parameter Test conditions

t

fr

V

FP

®

Forward recovery time IF=3A

/dt = 80A/µs

dI

F

=2V

V

FR

Peak forward voltage IF=3A

/dt = 80A/µs

dI

F

Tj = 100°C

Tj = 100°C

Value

Typ. Max.

240 ns

8V

Unit

3/9

DMV1500L

Fig. 1-1: Power dissipation versus peak forward

current (triangular waveform, δ = 0.45) (damper
diode).

PF(av)(W)

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0123456

Ip(A)

Fig. 2-1: Average forward current versus ambient

temperature (damper diode).

IF(av)(A)

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150

δ

T

=tp/T

Rth(j-a)=Rth(j-c)

tp

Tamb(°C)

Fig. 1-2: Power dissipation versus peak forward

current (triangular waveform, δ = 0.45) (modula­tion diode).

PF(av)(W)

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0123456

Ip(A)

Fig. 2-2: Average forward current versus ambient

temperature (modulation diode).

IF(av)(A)

3.5

3.0

2.5

2.0

1.5

1.0

T

0.5

=tp/T

δ

0.0
0 25 50 75 100 125 150

tp

Rth(j-a)=Rth(j-c)

Tamb(°C)

Fig. 3-1: Forwardvoltage drop versus forward cur-

rent (damper diode).

IFM(A)

30

Maximum

Tj=125°C

Typical

Tj=125°C

VFM(V)

Maximum

Tj=25°C

25
20
15
10

5
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

4/9

Fig. 3-2: Forwardvoltage drop versus forward cur­rent (modulation diode).

IFM(A)

30

Typical

25
20

Maximum

15

Tj=125°C

10

5
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=125°C

VFM(V)

Maximum

Tj=25°C

®

DMV1500L

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration.

K=[Zth(j-c)/Rth(j-c)]

1.0

δ = 0.5

0.5

δ = 0.2

δ = 0.1

0.2

Single pulse

tp(s)

0.1
1E-3 1E-2 1E-1 1E+0

δ

=tp/T

T

tp

Fig.5-2: Non repetitivesurge peak forward current
versus overload duration (modulation diode).

IM(A)

30
25
20
15
10

IM

5
0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=100°C

Fig.5-1: Non repetitivesurge peak forward current
versus overload duration (damper diode).

IM(A)

30
25
20
15
10

IM

5
0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=100°C

Fig. 6-1: Reverse recovery charges versus diF/dt
(damper diode).

Qrr(nC)

2.4

IF=IF(av)

2.2

90% confidence

Tj=125°C

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 0.2 0.5 1.0 5.0

dIF/dt(A/µs)

Fig. 6-2: Reverse recovery charges versus diF/dt

(modulation diode).

Qrr(nC)

200

150

100

IF=IF(av)

90% confidence

Tj=125°C

50

dIF/dt(A/µs)

0

0.1 1.0 10.0 100.0

®

Fig. 7-1: Reverse recovery current versus diF/dt
(damper diode).

IRM(A)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

IF=IF(av)

90% confidence

Tj=125°C

dIF/dt(A/µs)

0.1 0.2 0.5 1.0 5.0

5/9

DMV1500L

Fig. 7-2: Reverse recovery current versus diF/dt

(modulation diode).

IRM(A)

6

IF=IF(av)

90% confidence

Tj=125°C

5
4
3
2
1

dIF/dt(A/µs)

0

1 10 100 200

Fig. 8-2: Transient peak forward voltage versus
dIF/dt (modulation diode).

VFP(V)

12

IF=IF(av)

11

90% confidence

Tj=125°C

10

9
8
7
6
5
4
3
2
1
0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

Fig. 8-1: Transient peak forward voltage versus

dIF/dt (damper diode).

VFP(V)

50

IF=IF(av)

45

90% confidence

Tj=125°C

40
35
30
25
20
15
10

5
0

0 20 40 60 80 100 120 140

dIF/dt(A/µs)

Fig. 9-1: Forward recovery time versus dIF/dt

(damper diode).

tfr(ns)

700
650
600
550
500
450
400
350
300
250
200

0 20 40 60 80 100 120 140

dIF/dt(A/µs)

IF=IF(av)

90% confidence

Tj=125°C

Vfr=3V

Fig. 9-2: Forward recovery time versus dIF/dt
(modulation diode).

tfr(ns)

200
175
150
125
100

75
50
25

0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

6/9

IF=IF(av)

90% confidence

Tj=125°C

Vfr=2V

Fig. 10-1: Dynamic parameters versus junction
temperature (damper diode).

VFP,IRM,Qrr[Tj] / VFP,IRM,Qrr[Tj=125°C]

1.2

1.0

0.8

0.6

0.4

0.2

0.0

VFP

IRM

Qrr

Tj(°C)

0 20 40 60 80 100 120 140

®

DMV1500L

Fig. 10-2: Dynamic parameters versus junction

temperature (modulation diode).

VFP,IRM,Qrr[Tj] / VFP,IRM,Qrr[Tj=125°C]

1.2

1.0

0.8

0.6

0.4

0.2

0.0

VFP

IRM

Qrr

Tj(°C)

0 20 40 60 80 100 120 140

Fig. 11: Junction capacitance versus reverse volt­age applied (typical values).

C(pF)

100

Modulation

10

1

1 10 100 200

Damper

VR(V)

Tj=25°C
F=1MHz

ORDERING INFORMATION

DMV1500L / F5

Damper and modulation diodes for video

Lead bending (option)

®

7/9

DMV1500L

PACKAGE MECHANICAL DATA

TO-220AB F5 OPTION

B

Ø

I

a1

l3

l2

b1

e

b2

L

A

l4

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

C

A 15.20 15.90 0.598 0.625
a1 24.16 26.90 0.951 1.059
a3 1.65 2.41 0.064 0.094

F

B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107

R2

c2

a3

R1

e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

L 2.65 2.95 0.104 0.116

c2

c1

M1

I2 1.14 1.70 0.044 0.066

l3 1.14 1.70 0.044 0.066

l4 15.80 16.80 0.622 0.661

16.40 typ. 0.645 typ.
M1 2.92 3.30 0.114 0.129
R1 1.40 typ. 0.055 typ.
R2 1.40 typ. 0.055 typ.

PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT

3.1mm

8/9

1mm

2.2mm

2.54mm

■ Cooling method: by conduction (c)

■

Recommended torque value: 0.8 m.N.

■

Maximum torque value: 1 m.N.

®

PACKAGE MECHANICAL DATA

TO-220AB

B

L

I

A

l4

a1

l3

l2

a2

b1

e

DMV1500L

DIMENSIONS

C

b2

A 15.20 15.90 0.598 0.625

a1 3.75 0.147

REF.

F

a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027

c2

c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

M

c1

L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

■ Cooling method: by conduction (c)

■

Recommended torque value: 0.8 m.N.

■

Maximum torque value: 1 m.N.

Type Marking Package Weight Base qty Delivery mode

DMV1500L

DMV1500L TO-220AB 2.2 g. 50 Tube

DMV1500LF5

■

Epoxy meets UL94, V0

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®

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