Datasheet DMV1500H Datasheet (SGS Thomson Microelectronics)

®

DMV1500H

DAMPER + MODULATION DIODE FOR VIDEO

MAIN PRODUCT CHARACTERISTICS

MODUL DAMPER

I

F(AV)

V

RRM

t

(max) 50 ns 125ns

rr

V

(max) 1.4 V 1.7 V

F

3A 6A

600 V 1500 V

FEATURES AND BENEFITS

Fullkitinonepackage

■

■ High breakdown voltage capability

■ Very fast recovery diode

■ Specified turn on switching characteristics

■

Low static and peak forward voltage dropfor low dissipation

■ Insulated version:

Insulated voltage = 2500 V

RMS

Capacitance = 7 pF

■

Planar technology allowing high quality and best electrical characteristics

■

Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation

DAMPER MODULATION

123

3

2

1

Insulated TO-220AB

(Bending option F5 available)

DESCRIPTION

High voltage semiconductor especially designed for horizontal deflection stageinstandardandhigh resolution video display with E/W correction.

The insulated TO-220AB package includes both theDAMPERdiodeandthe MODULATION diode. Assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter

V

RRM

I

FSM

T

stg

T

July 2001 - Ed: 6A

Repetitive peak reverse voltage Surge non repetitive forward current tp = 10 ms sinusoidal Storage temperature range Maximum operating junction temperature

j

Value

Unit

MODUL DAMPER

600 1500 V

35 80 A

-40to+150 °C 150

1/9

DMV1500H

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-c)

STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES

Damper junction to case Modulation junction to case

3.6 °C/W 6

Value

Symbol Parameter Test conditions

Typ. Max. Typ. Max.

Forward voltage drop I

*

V

F

**

I

R

Pulse test : * tp = 380 µs, δ <2%

To evaluate the maximum conduction losses of the DAMPER diode use the following equations : P=1.35xI

Reverse leakage current V

**tp = 5 ms, δ <2%

+ 0.059 x I

F(AV)

F2(RMS)

=6A

F

= 1500V

R

1.5 2.3 1.25 1.7 V 100 100 1000 µA

STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE

Value

Symbol Parameter

Test

conditions

Typ. Max. Typ. Max.

Forward voltage drop I

*

V

F

**

I

R

Pulse test : * tp = 380 µs, δ <2%

To evaluate the maximum conduction losses of the MODULATION diode use the following equations : P=1.2xI

Reverse leakage current V

** tp = 5 ms, δ <2%

+ 0.066 x I

F(AV)

F2(RMS)

=3A

F

= 600V

R

1.8 1.1 1.4 V 20350µA

UnitTj = 25°C Tj = 125°C

RECOVERY CHARACTERISTICS OF THE DAMPER DIODE

Symbol Parameter Test conditions

Tj = 25°C

2/9

t

rr

t

rr

Reverse recovery time IF= 100mA

= 100mA

I

R

= 10mA

I

RR

Reverse recovery time IF=1A

/dt = -50A/µs

dI

F

= 30V

V

R

Value

Typ. Max.

Unit

625 ns

95 125 ns

®

RECOVERY CHARACTERISTICS OF THE MODULATION DIODE

DMV1500H

Symbol Parameter Test conditions

t

rr

t

rr

Reverse recovery time IF= 100mA

= 100mA

I

R

= 10mA

I

RR

Reverse recovery time IF=1A

/dt = -50A/µs

dI

F

= 30V

V

R

Tj = 25°C

TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE

Symbol Parameter Test conditions

t

fr

V

FP

Forward recovery time IF=6A

/dt = 80A/µs

dI

F

=3V

V

FR

Peak forward voltage IF=6A

/dt = 80A/µs

dI

F

Tj = 100°C

TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE

Value

Typ. Max.

Unit

110 350 ns

50 ns

Value

Typ. Max.

Unit

350 ns

18 25 V

Symbol Parameter Test conditions

t

fr

V

FP

Forward recovery time IF=3A

/dt = 80A/µs

dI

F

=2V

V

FR

Peak forward voltage IF=3A

/dt = 80A/µs

dI

F

Tj = 100°C

Value

Typ. Max.

240 ns

8V

Unit

®

3/9

DMV1500H

Fig. 1-1: Power dissipation versus peak forward

current (triangular waveform, δ = 0.45) (damper diode).

PF(av)(W)

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0 0123456

Ip(A)

Fig. 2-1: Average forward current versus ambient

temperature (damper diode).

IF(av)(A)

8 7 6 5 4 3 2 1

=tp/T

δ

0

0 25 50 75 100 125 150

T

Rth(j-a)=Rth(j-c)

tp

Tamb(°C)

Fig. 1-2: Power dissipation versus peak forward

current (triangular waveform, δ = 0.45) (modulation diode).

PF(av)(W)

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0 0123456

Ip(A)

Fig. 2-2: Average forward current versus ambient

temperature (modulation diode).

IF(av)(A)

4.0

3.5

3.0

2.5

2.0

1.5

δ

=tp/T

T

tp

Tamb(°C)

1.0

0.5

0.0 0 25 50 75 100 125 150

Rth(j-a)=Rth(j-c)

Fig. 3-1: Forward voltage drop versus forward current (damper diode).

IFM(A)

15.0

Typical

Tj=125°C

10.0

Maximum

Tj=125°C

5.0

VFM(V)

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

4/9

Maximum

Tj=25°C

Fig. 3-2: Forward voltage drop versus forward

current (modulation diode).

IFM(A)

10.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

Maximum

Tj=125°C

Typical

Tj=125°C

VFM(V)

Maximum

Tj=25°C

®

DMV1500H

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration.

K=[Zth(j-c)/Rth(j-c)]

1.0

δ = 0.5

0.5

δ = 0.2

δ = 0.1

0.2

Single pulse

tp(s)

0.1 1E-3 1E-2 1E-1 1E+0

δ

=tp/T

T

tp

Fig.5-2: Non repetitivesurge peak forward current versus overload duration (modulation diode).

IM(A)

30 25 20 15 10

IM

5 0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=100°C

Fig.5-1: Non repetitivesurge peak forward current versus overload duration (damper diode).

IM(A)

40

Tc=100°C

35 30 25 20 15 10

IM

5 0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Fig. 6-1: Reverse recovery charges versus dIF/dt

(damper diode).

Qrr(nc)

1200 1000

800 600 400 200

IF= 6A

90% confidence

Tj=125°C

dIF/dt(A/µs)

0

0.1 0.2 0.5 1.0 2.0 5.0

Fig. 6-2: Reverse recovery charges versus dIF/dt (modulation diode).

Qrr(nC)

200

150

100

IF= 3A

90% confidence

Tj=125°C

50

dIF/dt(A/µs)

0

0.1 1.0 10.0 100.0

®

Fig. 7-1: Reverse recovery current versus dIF/dt (damper diode).

IRM(A)

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

IF= 6A

90% confidence

Tj=125°C

dIF/dt(A/µs)

0.1 0.2 0.5 1.0 2.0 5.0

5/9

DMV1500H

Fig. 7-2: Reverse recovery current versus dIF/dt

(modulation diode).

IRM(A)

6

IF= 3A

90% confidence

Tj=125°C

5 4 3 2 1

dIF/dt(A/µs)

0

1 10 100 200

Fig. 8-2: Transient peak forward voltage versus dIF/dt (modulation diode).

VFP(V)

12

IF= 3A

11

90% confidence

Tj=125°C

10

9 8 7 6 5 4 3 2 1 0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

Fig. 8-1: Transient peak forward voltage versus

dIF/dt (damper diode).

VFP(V)

40

IF= 6A

90% confidence

35

Tj=125°C

30 25 20 15 10

5 0

0 20 40 60 80 100 120 140

dIF/dt(A/µs)

Fig. 9-1: Forward recovery time versus dIF/dt

(damper diode).

tfr(ns)

800 750 700 650 600 550 500 450 400 350 300

0 20 40 60 80 100 120 140

dIF/dt(A/µs)

IF= 6A

90% confidence

Tj=125°C

VFR=3V

Fig. 9-2: Forward recovery time versus dIF/dt (modulation diode).

tfr(ns)

200 175 150 125 100

75 50 25

0

0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/µs)

6/9

IF= 3A

90% confidence

Tj=125°C

Vfr=2V

Fig. 10: Dynamic parameters versus junction temperature (damper & modulation diodes).

VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C]

1.2

1.0

0.8

VFP

0.6

IRM

0.4

Qrr

0.2

0.0 0 20 40 60 80 100 120 140

Tj(°C)

®

DMV1500H

Fig. 11: Junction capacitance versus reverse voltage

applied (typical values) (damper & modulation diodes).

C(pF)

100

Tj=25°C F=1MHz

10

1

1 10 100 200

Modulation

VR(V)

ORDERING INFORMATION

DMV1500H / F5

LEAD BENDING (OPTION)

DAMPER AND MODULATION DIODES FORVIDEO

®

7/9

DMV1500H

PACKAGE MECHANICAL DATA

TO-220AB F5 OPTION

B

Ø

I

a1

l3

l2

b1

e

b2

L

A

l4

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 15.20 15.90 0.598 0.625

C

a1 24.16 26.90 0.951 1.059 a3 1.65 2.41 0.064 0.094

B 10.00 10.40 0.393 0.409

F

b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107

R2

c2

a3

R1

e 2.40 2.70 0.094 0.106

F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

L 2.65 2.95 0.104 0.116

c2

c1

M1

I2 1.14 1.70 0.044 0.066

l3 1.14 1.70 0.044 0.066

l4 15.80 16.80 0.622 0.661

16.40 typ. 0.645 typ. M1 2.92 3.30 0.114 0.129 R1 1.40 typ. 0.055 typ. R2 1.40 typ. 0.055 typ.

PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT

3.1mm

8/9

1mm

2.2mm

2.54mm

■

Cooling method: by conduction (c)

■

Recommended torque value: 0.8 m.N.

■

Maximum torque value: 1 m.N.

®

PACKAGE MECHANICAL DATA

TO-220AB

B

L

I

A

l4

a1

l3

l2

a2

b1

e

DMV1500H

DIMENSIONS

C

b2

A 15.20 15.90 0.598 0.625

a1 3.75 0.147

REF.

F

a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027

c2

c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

M

c1

L 2.65 2.95 0.104 0.116

l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

■ Cooling method: by conduction (c)

■

Recommended torque value: 0.8 m.N.

■

Maximum torque value: 1 m.N.

Type Marking Package Weight Base qty Delivery mode

DMV1500H

DMV1500H TO-220AB 2.2g. 50 Tube

DMV1500HF5

■

Epoxy meets UL94, V0

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