Datasheet CNY64, CNY65, CNY66 Specification

17187-4

CNY65

CNY66

CNY64

CNY64, CNY65, CNY66

Vishay Semiconductors

Optocoupler, Phototransistor Output, Very High Isolation Voltage

FEATURES

Top View

A

C

17187-5

V

DE

C

E

DESCRIPTION

The CNY64, CNY65, and CNY66 consist of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4 pin plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.

VDE STANDARDS

These couplers perform safety functions according to the
following equipment standards:

• DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements

• IEC 60950/EN 60950
Office machines

• VDE 0804
Telecommunication apparatus and data processing

• IEC60065
Safety for mains-operated electronic and related
household apparatus

• VDE 0700/IEC 60335
Household equipment

• VDE 0160
Electronic equipment for electrical power installation

• VDE 0750/IEC60601
Medical equipment

• Rated recurring peak voltage (repetitive)
V

= 1450 V

IORM

peak

• Thickness through insulation  3 mm

• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI  200

• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

APPLICATIONS

Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):

• for appl. class I - IV at mains voltage  300 V

• for appl. class I - IV at mains voltage  600 V

• for appl. class I - III at mains voltage  1000 V according
to DIN EN 60747-5-2 (VDE 0884), suitable for:

- Switch-mode power supplies

- Line receiver

- Computer peripheral interface

- Microprocessor system interface

AGENCY APPROVALS

• UL1577, file no. E76222 system code H, J, and K

• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1

• VDE related features:

- rated impulse voltage (transient overvoltage),
V

= 12 kV peak

IOTM

- isolation test voltage (partial discharge test voltage),

= 2.8 kV peak

V

pd

ORDERING INFORMATION

DIP, 400 mil DIP, 600 mil DIP, 700 mil

CNY 6 # x

PART NUMBER PACKAGE

AGENCY CERTIFIED/PACKAGE CTR (%)

UL, VDE 50 to 300 63 to 125 100 to 200

DIP-4 HV, 400 mil, high isolation distance CNY64 CNY64A CNY64B

DIP-4 HV, 600 mil, high isolation distance CNY65 CNY65A CNY65B

DIP-4 HV, 700 mil, high isolation distance CNY66 - CNY66B

Document Number: 83540 For technical questions, contact: [e-mail]
Rev. 2.1, 24-Feb-11 1

OPTION

CTR

BIN

10.16 mm

15.24 mm

17.8 mm

www.vishay.com

CNY64, CNY65, CNY66

Vishay Semiconductors

Optocoupler, Phototransistor Output,

Very High Isolation Voltage

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

INPUT

Reverse voltage V

Forward current I

Forward surge current t

Power dissipation P

Junction temperature T

OUTPUT

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

COUPLER

AC isolation test voltage CNY64 t = 1 min V

DC isolation test voltage CNY65 t = 1 s V

DC isolation test voltage CNY66 t = 1 s V

Total power dissipation P

Ambient temperature range T

Storage temperature range T

Soldering temperature 2 mm from case,  10 s T

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.

= 25 °C, unless otherwise specified)

amb

 10 μs I

p

/T = 0.5, tp  10 ms I

p

FSM

diss

CEO

ECO

CM

diss

ISO

ISO

ISO

amb

stg

sld

R

F

5V

75 mA

1.5 A

120 mW

j

100 °C

32 V

7V

C

50 mA

100 mA

130 mW

j

100 °C

8200 V

RMS

13.9 kV

13.9 kV

tot

250 mW

- 55 to + 85 °C

- 55 to + 100 °C

260 °C

ELECTRICAL CHARACTERISTICS (T

= 25 °C, unless otherwise specified)

amb

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

INPUT

Forward voltage I

Junction capacitance V

= 50 mA V

F

= 0, f = 1 MHz C

R

F

j

1.25 1.6 V

50 pF

OUTPUT

Collector emitter voltage I

Emitter collector voltage I

Collector emitter leakage current V

= 1 mA V

C

= 100 μA V

E

= 20 V, IF = 0 A I

CE

CEO

ECO

CEO

32 V

7V

200 nA

COUPLER

Collector emitter saturation voltage I

Cut-off frequency

Coupling capacitance f = 1 MHz C

= 10 mA, IC = 1 mA V

F

V

= 5 V, IF = 10 mA,

CE

R

= 100 

L

CEsat

f

c

k

0.3 V

110 kHz

0.3 pF

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 83540

2 Rev. 2.1, 24-Feb-11

0

25

50

75

100

125

150

175

200

225

250

0 25 50 75 100 125 150 175 200

TSI - Safety Temperature(°C)

P

SO

(mW)

ISI(mA)

t

13930

t1, t2 = 1 to 10 s
t

3

, t4 = 1 s

t

test

= 10 s

t

stres

= 12 s

V

IOTM

V

Pd

V

IOWM

V

IORM

0

t

1

t

test

tTr = 60 s

t

stres

t3t

4

t

2

CNY64, CNY65, CNY66

Optocoupler, Phototransistor Output,

Vishay Semiconductors

Very High Isolation Voltage

CURRENT TRANSFER RATIO (T

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

I

C/IF

SAFETY AND INSULATION RATED PARAMETERS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Partial discharge test voltage ­routine test

Partial discharge test voltage ­lot test (sample test)

V

IO

V

Insulation resistance

Forward current I

Power dissipation P

Rated impulse voltage V

Safety temperature T

Note

• According to DIN EN 60747-5-2 (see fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.

IO

V

IO

(construction test only)

= 25 °C, unless otherwise specified)

amb

CNY64,
CNY65,

CNY66

CNY64A CTR 63 125 %

VCE = 5 V, IF = 10 mA

CNY65A CTR 63 125 %

CNY64B CTR 100 200 %

CNY65B CTR 100 200 %

CNY66B CTR 100 200 %

100 %, t

t

= 60 s, t

Tr

= 500 V, T

= 500 V, T

= 500 V, T

= 1 s V

test

= 10 s,

test

(see fig. 2)

amb

= 100 °C R

amb

= 150 °C

amb

= 25 °C R

pd

V

pd

IO

IO

R

IO

SI

SO

IOTM

SI

CTR 50 300 %

2.8 kV

2.2 kV

12

10

10

10

11

9







120 mA

250 mW

12 kV

150 °C

Document Number: 83540 For technical questions, contact: [e-mail]
Rev. 2.1, 24-Feb-11 3

Fig. 1 - Safety Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to

DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5

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CNY64, CNY65, CNY66

Channel I

Channel II

95 10900

RG = 50

t

p

tp = 50 µs

T

= 0.01

+ 5 V

I

C

= 5 mA; adjusted through

input amplitude

I

F

0

I

F

50 100

Oscilloscope
R

L

1 M

C

L

20 pF

Channel I

Channel II

95 10843

RG= 50 Ω

t

p

tp= 50 µs

T

= 0.01

+ 5 V

I

C

I

F

0

50 Ω

1 kΩ

I

F

= 10 mA

Oscilloscope

R

L

≥

C

L

20 pF

1 MΩ

≤

Vishay Semiconductors

Optocoupler, Phototransistor Output,

Very High Isolation Voltage

SWITCHING CHARACTERISTICS (T

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Delay time V

Rise time V

Fall time V

Storage time V

Turn-on time V

Turn-off time V

Turn-on time V

Turn-off time V

Fig. 3 - Test Circuit, Non-Saturated Operation

= 5 V, IC = 5 mA, RL = 100 , (see fig. 3) t

S

= 5 V, IC = 5 mA, RL = 100 , (see fig. 3) t

S

= 5 V, IC = 5 mA, RL = 100 , (see fig. 3) t

S

= 5 V, IC = 5 mA, RL = 100 , (see fig. 3) t

S

= 5 V, IC = 5 mA, RL = 100 , (see fig. 3) t

S

= 5 V, IC = 5 mA, RL = 100 , (see fig. 3) t

S

= 5 V, IF = 10 mA, RL = 1 k, (see fig. 4) t

S

= 5 V, IF = 10 mA, RL = 1 k, (see fig. 4) t

S

= 25 °C, unless otherwise specified)

amb

d

r

f

s

on

off

on

off

I

F

0

I

C

100 %

90 %

10 %

0

t

p

t

d

t

r

t

(= td + tr) Turn-on time

on

2.6 μs

2.4 μs

2.7 μs

0.3 μs

5μs

3μs

25 μs

42.5 μs

t

p

t

r

t

d

t

on

Pulse duration
Delay time
Rise time

t

s

t

s

t

f

(= ts + tf) Turn-off time

t

off

Fig. 5 - Switching Times

t

t

f

t

off

t

Storage time
Fall time

96 11698

Fig. 4 - Test Circuit, Saturated Operation

www.vishay.com For technical questions, contact: [e-mail]
4 Rev. 2.1, 24-Feb-11

Document Number: 83540

0.1

1

10

100

1000

0

VF - Forward Voltage (V)

96 11862

I

F

- Forward Current (mA)

1.6

1.2

0.8

0.4

2.0

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

- 30 - 20 - 10 0

10 20 30 40 50 60 70 80

T

amb

- Ambient Temperature (°C)

96 11911

CTR

rel

- Relative Current Transfer Ratio

V

CE

= 5 V

I

F

= 10 mA

1

10

100

1000

0 102030405060708090 100

T

amb

- Ambient Temperature (°C)

96 12000

I

CEO

- Collector Dark Current,

with open Base (nA)

VCE = 20 V
I

F

= 0

CNY64, CNY65, CNY66

Optocoupler, Phototransistor Output,

Very High Isolation Voltage

TYPICAL CHARACTERISTICS (T

280

Coupled device

240

200

160

Phototransistor

120

IR-diode

80

40

- Total Power Dissipation (mW)

tot

0

P

0255075

T

21995

Fig. 6 - Total Power Dissipation vs. Ambient Temperature

- Ambient Temperature (°C)

amb

= 25 °C, unless otherwise specified)

amb

Vishay Semiconductors

100

Fig. 9 - Collector Dark Current vs. Ambient Temperature

100

VCE = 5 V

10

Fig. 7 - Forward Current vs. Forward Voltage

Fig. 8 - Relative Current Transfer Ratio vs.

Document Number: 83540 For technical questions, contact: [e-mail]
Rev. 2.1, 24-Feb-11 5

Ambient Temperature

1

0.1

- Collector Current (mA)

C

I

0.01

0.1 1 10

95 11012

IF - Forward Current (mA)

100

Fig. 10 - Collector Current vs. Forward Current

100

10

1

- Collector Current (mA)

C

I

0.1

0.1 1 10

95 11013

VCE - Collector Emitter Voltage (V)

IF = 50 mA

10 mA

5 mA

2 mA

1 mA

100

Fig. 11 - Collector Current vs. Collector Emitter Voltage

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CNY64, CNY65, CNY66

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

110100

IC - Collector Current (mA)

96 11912

V

CEsat

- Collector Emitter

Saturation Voltage (V)

CTR = 50 %

10 %

20 %

01015

0

10

20

30

40

50

IF - Forward Current (mA)

20

95 11017

t

on

/t

off

- Turn-on/Turn-off Time (µs)

Saturated operation
V

S

= 5 V

R

L

= 1 kΩ

t

off

t

on

5

04

IC - Collector Current (mA)

10

95 11016

Non-saturated
operation
V

S

= 5 V

R

L

= 100 Ω

t

off

t

on

0

5

10

15

20

8

t

on

/t

off

- Turn-on/Turn-off Time (µs)

2

6

Vishay Semiconductors

Fig. 12 - Collector Emitter Saturation Voltage vs.

Collector Current

1000

Optocoupler, Phototransistor Output,

Very High Isolation Voltage

Fig. 15 - Turn-on/Turn-off Time vs. Forward Current

VCE = 5 V

100

10

CTR - Current Transfer Ratio (%)

1

0.1 1 10

95 11015

IF - Forward Current (mA)

Fig. 13 - Current Transfer Ratio vs. Forward Current

Fig. 14 - Turn-on/Turn-off Time vs. Collector Current

www.vishay.com For technical questions, contact: [e-mail]
6 Rev. 2.1, 24-Feb-11

100

Document Number: 83540

CNY64, CNY65, CNY66

Optocoupler, Phototransistor Output,

Very High Isolation Voltage

PACKAGE DIMENSIONS in millimeters FOR CNY64

12.8 ± 0.1

6.01 ± 0.1

10.16 ± 0.2

0.4

A

0.5

Coll

Vishay Semiconductors

7.2 ± 0.1

9.1 ± 0.3

5.08 ± 0.2

Weight: ca. 0.73 g
Creepage distance: > 9.5 mm
Air path: > 9.5 mm
after mounting on PC board

Cath

Drawing-No.: 6.544-5038.01-4
Issue: 2; 10.11.98

14765

E

technical drawings
according to DIN
specifications

Document Number: 83540 For technical questions, contact: [e-mail]

www.vishay.com

Rev. 2.1, 24-Feb-11 7

CNY64, CNY65, CNY66

14764

technical drawings
according to DIN
specifications

Weight: ca. 1.70 g
Creepage distance: > 17 mm
Air path: > 17 mm
after mounting on PC board

9.6 ± 0.1

20.4 ± 0.1

17.8 ± 0.2

7.62 ± 0.2

Cath

A

Coll

E

0.4

0.5

6.1 ± 0.1

9.1 ± 0.3

Drawing-No.: 6.544-5037.01-4
Issue: x; 10.11.98

Vishay Semiconductors

Optocoupler, Phototransistor Output,

Very High Isolation Voltage

PACKAGE DIMENSIONS in millimeters FOR CNY65

17.8 ± 0.1

6.1 ± 0.1

9.1 ± 0.3

15.24 ± 0.2

0.4

0.5

A

Cath

Drawing-No.: 6.544-5036.01-1
Issue: 2; 10.11.98

14763

Coll

E

9.6 ± 0.1

7.62 ± 0.2

Weight: ca. 1.40 g
Creepage distance: > 14 mm
Air path: > 14 mm
after mounting on PC board

technical drawings
according to DIN
specifications

PACKAGE DIMENSIONS in millimeters FOR CNY66

PACKAGE MARKING

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8 Rev. 2.1, 24-Feb-11

21764-73

CNY65A

V YWW J 69

Document Number: 83540

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

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Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1