Page 1
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
30/7/97
DB90038-AAS/A1
APPROVALS
l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll
ll
l CNX82AXG - VDE 0884 approved
l Certified to EN60950 by the following
Test Bodies :Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
DESCRIPTION
The CNX82AG series of optically coupled
isolators consist of an infrared light emitting
diode and a NPN silicon photo transistor in a
standard 6 pin dual in line plastic package with
the base pin unconnected.
FEATURES
l High Current Transfer Ratio (40% min)
l Low Saturation Voltage suitable for TTL
integrated circuits
l High BV
CEO
(50V min)
l High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l Base pin unconnected for improved noise
immunity in high EMI environment
APPLICATIONS
l DC motor controllers
l Industrial systems controllers
l Signal transmission between systems of
different potentials and impedances
0.5
1
34
6
Dimensions in mm
7.0
6.0
1.2
3.0
3.35
4.0
3.0
2.54
7.62
6.62
25
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
50V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation 160mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
NON-BASE LEAD
OPTICALL Y COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
CNX82AXG,
CNX82AG
0.5
7.62
10.16
0.26
Page 2
DB90038-AAS/A1
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA
Reverse Voltage (VR)6VI
R
= 10µA
Reverse Current (IR)10µAV
R
= 6V
Output Collector-emitter Breakdown (BV
CEO
)50 V IC = 1mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO
) 6 V IE = 100µA
Collector-emitter Dark Current (I
CEO
)50nAV
CE
= 10V
Coupled Current Transfer Ratio (IC / IF )
(Note 2) 0.4 10mA IF , 0.4V V
CE
1.5 10mA IF , 5V V
CE
Collector-emitter Saturation VoltageVCE
(SAT)
0.4 V 10mA I
F
, 4mA I
C
Input to Output Isolation Voltage V
ISO
5300 V
RMS
See note 1
7500 V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
Ω V
IO
= 500V (note 1)
Turn-on Time t
on
3 µsV
CC
= 5V , IC = 2mA ,
Turn-off Time t
off
3 µsR
L
= 100Ω
Turn-on Time t
on
12 µsV
CC
= 5V , IC = 2mA ,
Turn-off Time t
off
12 µsR
L
= 1kΩ
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
30/7/97
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Page 3
DB90038-AAS/A1
30/7/97
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
100
0
0.5
1.0
1.5
IF = 10mA
VCE = 0.4V
Forward current I
F
(mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
70
80
1 2 5 10 20 50
0
0.8
1.2
1.6
2.0
2.4
0.4
2.8
VCE = 0.4V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current I
C
(mA)
0 2 4 6 8 10
0
10
20
30
40
50
TA = 25°C
IF = 5mA
10
15
20
30
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Collector-emitter saturation voltage V
CE(SAT)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 10mA
IC = 4mA
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Loading...