Page 1
13/12/00
CNX83AG
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll VDE 0884 approval pending
l EN60950 approval pending
DESCRIPTION
The CNX83AG optically coupled isolator
consists of an infrared light emitting diode and
a NPN silicon photo transistor in a standard 6
pin dual in line plastic package.
FEATURES
l High Current Transfer Ratio (40% min)
l Low Saturation Voltage suitable for TTL
integrated circuits
l High BV
l High Isolation Voltage (5.3kV
(50V min)
CEO
RMS
,7.5kV
PK
Dimensions in mm
1
2 5
3 4
0.5
0.26
1.2
3.0
0.5
7.62
6.62
2.54
7.0
6.0
4.0
3.0
3.35
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
)
INPUT DIODE
6
7.62
10.16
APPLICATIONS
l DC motor controllers
l Industrial systems controllers
l Signal transmission between systems of
different potentials and impedances
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-collector Voltage BV
Power Dissipation 160mW
CEO
CBO
ECO
50V
70V
6V
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92513-AAS/A1
Page 2
13/12/00
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA
Reverse Voltage (VR) 6 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V
Output Collector-emitter Breakdown (BV
( Note 2 )
Collector-base Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 50 V IC = 1mA
CEO
) 70 V IC = 100µA
CBO
) 6 V IE = 100µA
ECO
) 50 nA VCE = 10V
CEO
Coupled Current Transfer Ratio (IC / IF )
(Note 2) 0.4 10mA IF , 0.4V V
1.5 10mA IF , 5V V
Collector-emitter Saturation VoltageVCE
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
Turn-on Time t
Turn-off Time t
Turn-on Time t
Turn-off Time t
on
off
on
off
(SAT)
5300 V
ISO
7500 V
10
5x10
ISO
0.4 V 10mA I
RMS
PK
Ω V
3 µs VCC = 5V , IC = 2mA ,
3 µs RL = 100Ω
12 µs VCC = 5V , IC = 2mA ,
12 µs RL = 1kΩ
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
, 4mA I
F
See note 1
See note 1
= 500V (note 1)
IO
CE
CE
C
DB92513-AAS/A1
Page 3
13/12/00
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
200
(mW)
C
150
100
50
Collector power dissipation P
0
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
80
70
60
(mA)
F
50
40
30
20
Forward current I
10
0
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
50
40
(mA)
C
30
50
30
20
20
Collector current I
10
0
0 2 4 6 8 10
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
(V)
0.28
CE(SAT)
0.24
0.20
IF = 10mA
IC = 4mA
0.16
0.12
0.08
0.04
0
Collector-emitter saturation voltage V
-30 0 25 50 75 100
Ambient temperature TA ( °C )
TA = 25°C
15
10
IF = 5mA
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
IF = 10mA
VCE = 0.4V
1.0
0.5
Relative current transfer ratio
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
2.0
1.6
1.2
0.8
Relative current transfer ratio
0.4
VCE = 0.4V
TA = 25°C
0
1 2 5 10 20 50
Forward current IF (mA)
DB92513-AAS/A1
Loading...