Datasheet CGY2032TS-C1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1998 Nov 23
File under Integrated Circuits, IC17

1999 Jul 21

INTEGRATED CIRCUITS

CGY2032TS

DECT 500 mW power amplifier

1999 Jul 21 2

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2032TS

FEATURES

• Power Amplifier (PA) overall efficiency 55%

• 27.5 dBm saturated output power at 3.2 V

• 0 dBm input power

• 40 dB linear gain

• Operation without negative supply

• Wide operating temperature range −30 to +85 °C

• SSOP16 package.

APPLICATIONS

• 1.88 to 1.9 GHz transceivers for DECT applications

• 2 GHz transceivers [Personal Handy phone System

(PHS), Digital Cellular System (DCS) and Personal
Communication Services (PCS)].

GENERAL DESCRIPTION

The CGY2032TS is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate from 3.6 V battery supply.
No negative supply voltage is required for operation.

QUICK REFERENCE DATA

Note

1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.

ORDERING INFORMATION

BLOCK DIAGRAM

SYMBOL PARAMETER

(1)

MIN. TYP. MAX. UNIT

V

DD

positive supply voltage − 3.2 − V

I

DD

positive peak supply current − 350 − mA

P

o

output power − 27.5 − dBm

T

amb

ambient temperature −30 − +85 °C

TYPE

NUMBER

PACKAGE

NAME DESCRIPTION VERSION

CGY2032TS SSOP16 plastic shrink small outline package; 16 leads; body width 4.4 mm SOT369-1

Fig.1 Block diagram.

handbook, halfpage

MGK735

10 6, 7

2, 3, 4
12, 13, 14

11

85

16
15

1

RFI

V

DD1

GND1 GND2 GND3

V

DD2VDD3

RFO
OPM

CGY2032TS

1999 Jul 21 3

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2032TS

PINNING

SYMBOL PIN DESCRIPTION

V

DD3

1 third stage supply voltage
GND3 2 third stage ground supply
GND3 3 third stage ground supply
GND3 4 third stage ground supply
V

DD2

5 second stage supply voltage
GND2 6 second stage ground supply
GND2 7 second stage ground supply
V

DD1

8 first stage supply voltage
n.c. 9 not connected
GND1 10 first stage ground supply
RFI 11 PA input
GND3 12 third stage ground supply
GND3 13 third stage ground supply
GND3 14 third stage ground supply
OPM 15 output pre-matching
RFO 16 PA output

Fig.2 Pin configuration.

handbook, halfpage

CGY2032TS

MGK734

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

V

DD3

GND3
GND3
GND3

V

DD2

GND2
GND2

V

DD1

n.c.

GND1

RFI

GND3

GND3

GND3

OPM

RFO

FUNCTIONAL DESCRIPTION
Amplifier

The CGY2032TS is a 3-stage GaAs power amplifier
capableofdelivering500 mW(typ.)at1.9 GHzintoa 50 Ω
load. Each amplifier stage has an open-drain
configuration. The drains have to be loaded externally by
adequate reactive circuits which must also provide a DC
path to the supply.

The amplifier can be switched off by means of a single
external PNP or PMOS series switch connected between
the battery and the amplifier drains.

This switch can also be used to vary the actual supply
voltage applied to the amplifier and hence, control the
output power.

This device is specifically designed to work with a duty
factor of 50% and can work up to 100% with good thermal
performance printed-circuit boards.

Biasing

Internal biasing is provided inside the amplifier for
class AB operation.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. On Philips evaluation board.

2. On Philips evaluation board, P

tot

maximum value is 800 mW.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DD

operating supply voltage note 1 − 5.2 V

T

j(max)

maximum operating junction temperature − 150 °C

P

tot

total power dissipation note 2 − 450 mW

P

i

input power − 15 dBm

T

stg

storage temperature −55 +125 °C

1999 Jul 21 4

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2032TS

HANDLING

Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model
(HBM)], in accordance with

“MIL STD 883C - method 3015”

.

THERMAL CHARACTERISTICS

Note

1. On Philips evaluation board, R

th(j-a)

value is typically 80 K/W.

DC CHARACTERISTICS

T

amb

=25°C; unless otherwise specified.

AC CHARACTERISTICS

V

DD

= 3.2 V; fRF= 1900 MHz; Pi= 0 dBm; T

amb

=25°C; duty factor δ = 50%; 50 Ω impedance system; measured and

guaranteed on the CGY2032TS evaluation board; the circuit diagram is shown in Fig.5.

Note

1. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1
load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied
360 electrical degrees during a 60 seconds test period.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air; note 1 145 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Pins V

DD1,VDD2

and V

DD3

V

DD

positive supply voltage 1.8 3.2 4.2 V

I

DD

positive peak supply current VDD= 3.2 V −−800 mA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

i

input power −5 0 +5 dBm
δ duty factor − 50 100 %
P

o

output power 26.5 27.5 29 dBm
I

DD

total drain current −−500 mA
η efficiency − 55 − %
P

leak

RF leakage to output in power off state VDD=0V −−40 −35 dBm
H2 second harmonic level −−−30 dBc
H3 third harmonic level −−−35 dBc
Stab stability (spurious levels) note 1 −−60 − dBc

1999 Jul 21 5

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2032TS

Fig.3 Typical output power and efficiency versus input power at VDD= 3.2 V.

handbook, full pagewidth

10

30

10

−20 −15 −10 −50

power output

efficiency

5

Pi (dBm)

P

o

(dBm)

14

18

22

26

100

0

η

(%)

20

40

60

80

FCA009

Fig.4 Typical output power and efficiency versus supply voltage at Pi= 0 dBm.

handbook, full pagewidth

30

10

0 1.51 4.5

MGK738

2.5 3.50.5 423

14

18

22

26

100

0

20

40

60

80

P

o

(dBm)

η

(%)

VDD (V)

efficiency

power output

1999 Jul 21 6

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2032TS

APPLICATION INFORMATION

The CGY2032TS is operated and tested in accordance with the circuit diagram shown in Fig.5. Supply voltage switching
is achieved by a single bipolar PNP transistor.

Fig.5 Evaluation board circuit diagram.

Thickness: 0.8 mm; substrate: FR4; εr= 4.7.
(1) TRL1: width = 500 µm; length = 10 mm.
(2) TRL2: width = 500 µm; length = 3000 µm.
(3) TRL3: width = 500 µm; length = 7 mm.
(4) TRL4: adjusted for optimum matching; width = 500 µm; length = 1 to 3 mm.

handbook, full pagewidth

MGK736

CGY2032TS

851

10 6, 7 15

2, 3, 4

12, 13, 14

TRL4

(4)

22 pF

33 pF

10 nF

6.8 pF

1.2 pF

10 µF

6.8 pF

TRL1

(1)

TRL2

(2)

TRL3

(3)

OPMGND3GND2GND1

V

DD3

V

DD2

V

DD1

RFO

RFI

11

16

47 kΩ

10 kΩ

220 Ω

V

DD

V

bat

BC807

BC849C

control

1999 Jul 21 7

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2032TS

PACKAGE OUTLINE

UNIT A1A2A

3

b

p

cD

(1)E(1)

(1)

eHELLpQZywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

0.15

0.00

1.4

1.2

0.32

0.20

0.25

0.13

5.30

5.10

4.5

4.3

0.65

6.6

6.2

0.65

0.45

0.48

0.18

10

0

o

o

0.130.2 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

0.75

0.45

1.0

SOT369-1

94-04-20
95-02-04

w M

θ

A

A

1

A

2

b

p

D

y

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

X

(A )

3

A

0.25

18

16

9

pin 1 index

0 2.5 5 mm

scale

SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm

SOT369-1

A

max.

1.5

1999 Jul 21 8

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2032TS

SOLDERING
Introduction to soldering surface mount packages

Thistextgivesaverybriefinsighttoacomplextechnology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave solderingis not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
forsurfacemountdevices(SMDs)orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswithleadsonfoursides,thefootprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

1999 Jul 21 9

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2032TS

Suitability of surface mount IC packages for wave and reflow soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

PACKAGE

SOLDERING METHOD

WAVE REFLOW

(1)

BGA, SQFP not suitable suitable
HLQFP, HSQFP, HSOP, SMS not suitable

(2)

suitable

PLCC

(3)

, SO, SOJ suitable suitable

LQFP, QFP, TQFP not recommended

(3)(4)

suitable

SSOP, TSSOP, VSO not recommended

(5)

suitable

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1999 Jul 21 10

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2032TS

NOTES

1999 Jul 21 11

Philips Semiconductors Product specification

DECT 500 mW power amplifier CGY2032TS

NOTES

© Philips Electronics N.V.

SCA

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999

67

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Printed in The Netherlands 465008/04/pp12 Date of release: 1999 Jul 21 Document order number: 9397 750 05971