Datasheet CGY2032BTS Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

CGY2032BTS

DECT 500 mW power amplifier

Preliminary specification
File under Integrated Circuits, IC17

2000 Mar 14

Philips Semiconductors Preliminary specification

DECT 500 mW power amplifier CGY2032BTS

FEATURES

• Power Amplifier (PA) overall efficiency 55%

• 27.5 dBm saturated output power at 3.2 V

• 0 dBm input power

• 40 dB linear gain

• Operation without negative supply

APPLICATIONS

• 1.88 to 1.9 GHz transceivers for DECT applications

• 2 GHz transceivers: Personal Handy phone System

(PHS), Digital Cellular System (DCS) and Personal
Communication Services (PCS).

GENERAL DESCRIPTION

• Wide operating temperature range −30 to +85 °C

• SSOP16 package.

The CGY2032BTS is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate from 3.6 V battery supply.
No negative supply voltage is required for operation.

QUICK REFERENCE DATA

SYMBOL PARAMETER

V

DD

I

DD

P

o

T

amb

positive supply voltage − 3.2 − V
total drain current − 350 − mA
output power − 27.5 − dBm
ambient temperature −30 − +85 °C

(1)

Note

1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.

MIN. TYP. MAX. UNIT

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

CGY2032BTS SSOP16 plastic shrink small outline package; 16 leads; body width 4.4 mm SOT369-1

BLOCK DIAGRAM

V

handbook, halfpage

RFI

V

11

GND1 GND2 GND3

DD2VDD3

DD1

85

9,10 6, 7

1

CGY2032BTS

2, 3, 4
12, 13, 14

16
15

FCA080

RFO
OPM

Fig.1 Block diagram.

2000 Mar 14 2

Philips Semiconductors Preliminary specification

DECT 500 mW power amplifier CGY2032BTS

PINNING

SYMBOL PIN DESCRIPTION

V

DD3

GND3 2 third stage ground supply
GND3 3 third stage ground supply
GND3 4 third stage ground supply
V

DD2

GND2 6 second stage ground supply
GND2 7 second stage ground supply
V

DD1

GND1 9 first stage ground supply
GND1 10 first stage ground supply
RFI 11 PA input
GND3 12 third stage ground supply
GND3 13 third stage ground supply
GND3 14 third stage ground supply
OPM 15 output pre-matching
RFO 16 PA output

1 third stage supply voltage

5 second stage supply voltage

8 first stage supply voltage

handbook, halfpage

V

1

DD3

GND3

2
3

GND3

4

GND3

V

DD2

GND2
GND2

V

DD1

CGY2032BTS

5
6
7
8

FCA081

Fig.2 Pin configuration.

16

RFO

15

OPM

14

GND3

13

GND3

12

GND3

11

RFI

10

GND1

9

GND1

FUNCTIONAL DESCRIPTION
Amplifier

The CGY2032BTS is a 3-stage GaAs power amplifier
capableofdelivering500 mW(typ.)at1.9 GHzintoa 50 Ω
load. Each amplifier stage has an open-drain
configuration. The drains have to be loaded externally by
adequate reactive circuits which must also provide a
DC path to the supply.

The amplifier can be switched off by means of a single
external PNP or PMOS series switch connected between

This switch can also be used to vary the actual supply
voltage applied to the amplifier and hence, control the
output power.

This device is specifically designed to work with a duty
factor of 50% and can work up to 100% with good thermal
performance printed-circuit boards.

Biasing

Internal biasing is provided inside the amplifier for
class AB operation.

the battery and the amplifier drains.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
T
P
P
T

DD
j(max)
tot
i
stg

operating supply voltage note 1 − 5.2 V
maximum operating junction temperature − 150 °C
total power dissipation note 2 − 450 mW
input power − 15 dBm
storage temperature −55 +125 °C

Notes

1. On Philips evaluation board.

2. On Philips evaluation board, P

maximum value is 600 mW.

tot

2000 Mar 14 3

Philips Semiconductors Preliminary specification

DECT 500 mW power amplifier CGY2032BTS

HANDLING

Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model
(HBM)], in accordance with

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air; note 1 145 K/W

Note

1. On Philips evaluation board, R

DC CHARACTERISTICS

T

=25°C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

“MIL STD 883C - method 3015”

value is typically 80 K/W.

th(j-a)

.

Pins V

V

DD

I

DD0

DD1,VDD2

and V

DD3

positive supply voltage 1.8 3.2 4.2 V
positive peak supply current VDD= 3.2 V −−800 mA

AC CHARACTERISTICS

V

= 3.2 V; fRF= 1900 MHz; Pi= 0 dBm; T

DD

=25°C; duty factor δ = 50%; 50 Ω impedance system; measured and

amb

guaranteed on the CGY2032BTS evaluation board; the circuit diagram is shown in Fig.5.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

i

input power −5 0 +5 dBm
δ duty factor − 50 100 %
P

o

I

DD

output power VDD= 3.2 V 26.5 27.5 29 dBm

V

= 2.2 V 24 25 27 dBm

DD

total drain current VDD= 3.2 V − 350 500 mA

= 2.2 V −−400 mA

V

DD

η efficiency − 55 − %
P

leak

RF leakage to output in power off state VDD=0V −−40 −35 dBm
H2 second harmonic level −−−30 dBc
H3 third harmonic level −−−35 dBc
Stab stability (spurious levels) note 1 −−60 − dBc

Note

1. The device is adjusted to provide nominal load power into a 50 Ω load. The device is switched off and a 3 : 1 load
replaces the 50 Ω load. The device is switched on and the phase of the 3 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.

2000 Mar 14 4

Philips Semiconductors Preliminary specification

DECT 500 mW power amplifier CGY2032BTS

FCA009

30

handbook, full pagewidth

P

o

(dBm)

power output

100

(%)

η

26

22

18

14

10

−20 −15 −10 −50

efficiency

Fig.3 Typical output power and efficiency versus input power at VDD= 3.2 V.

30

handbook, full pagewidth

P

o

(dBm)

26

power output

80

60

40

20

0

MGK738

10

100

5

Pi (dBm)

η

(%)

80

22

efficiency

18

14

10

0 1.51 4.5

Fig.4 Typical output power and efficiency versus supply voltage at Pi= 0 dBm.

2000 Mar 14 5

2.5 3.50.5 423
VDD (V)

60

40

20

0

Philips Semiconductors Preliminary specification

DECT 500 mW power amplifier CGY2032BTS

APPLICATION INFORMATION

The CGY2032BTS is operated and tested in accordance with the circuit diagram shown in Fig.5. Supply voltage
switching is achieved by a single bipolar PNP transistor.

V

handbook, full pagewidth

bat

control

10 µF

10 kΩ

6.8 pF

47 kΩ

BC849C

220 Ω

1 nF

33 pF

22 pF

BC807

V

DD

150 pF

6.8 pF

TRL1
V

DD1

851

RFI

11

82 Ω

Thickness: 0.8 mm; substrate: FR4; εr= 4.7.
(1) TRL1: width = 500 µm; length = 10 mm.
(2) TRL2: width = 500 µm; length = 1 mm.
(3) TRL3: width = 500 µm; length = 8 mm.
(4) TRL4: adjusted for optimum matching; width = 500 µm; length = 1 to 3 mm.

9, 10 6, 7 15

CGY2032BTS

(1)

(2)

TRL2

V

DD2

2, 3, 4

12, 13, 14

TRL3

V

DD3

(3)

OPMGND3GND2GND1

TRL4

RFO

16

1.8 pF

(4)

FCA082

Fig.5 Evaluation board circuit diagram.

2000 Mar 14 6

Philips Semiconductors Preliminary specification

DECT 500 mW power amplifier CGY2032BTS

PACKAGE OUTLINE

SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm

SOT369-1

D

c

y

Z

16

pin 1 index

9

18

w M

b

e

p

E

H

E

A

2

A

1

L

detail X

A

X

v M

A

Q

(A )

L

p

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A1A2A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

A

max.

0.15

mm

1.5

OUTLINE

VERSION

SOT369-1 MO-152

0.00

1.4

1.2

IEC JEDEC EIAJ

0.25

b

3

p

0.32

0.20

0.25

0.13

(1)E(1)

cD

5.30

5.10

REFERENCES

4.5

4.3

0.65

2000 Mar 14 7

eHELLpQZywv θ

1.0

0.75

0.45

0.65

0.45

PROJECTION

0.130.2 0.1

EUROPEAN

6.6

6.2

(1)

0.48

0.18

ISSUE DATE

95-02-04
99-12-27

o

10

o

0

Philips Semiconductors Preliminary specification

DECT 500 mW power amplifier CGY2032BTS

SOLDERING
Introduction to soldering surface mount packages

Thistextgivesaverybriefinsighttoacomplextechnology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave solderingis not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
forsurfacemountdevices(SMDs)orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswithleadsonfoursides,thefootprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

2000 Mar 14 8

Philips Semiconductors Preliminary specification

DECT 500 mW power amplifier CGY2032BTS

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

WAVE REFLOW

(1)

BGA, SQFP not suitable suitable

SOLDERING METHOD

HLQFP, HSQFP, HSOP, SMS not suitable

(3)

PLCC

, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

(2)

(3)(4)
(5)

suitable

suitable
suitable

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

2000 Mar 14 9

Philips Semiconductors Preliminary specification

DECT 500 mW power amplifier CGY2032BTS

NOTES

2000 Mar 14 10

Philips Semiconductors Preliminary specification

DECT 500 mW power amplifier CGY2032BTS

NOTES

2000 Mar 14 11

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips DevelopmentCorporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS,Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

69

Printed in The Netherlands 403506/01/pp12 Date of release: 2000 Mar 14 Document order number: 9397 750 06881