Datasheet CGY2021G Datasheet (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
CGY2021G
DCS/PCS 2 W power amplifier
Preliminary specification Supersedes data of 1996 Oct 15 File under Integrated Circuits, IC17
1997 Apr 03
Page 2
Philips Semiconductors Preliminary specification
DCS/PCS 2 W power amplifier CGY2021G
FEATURES
Power Amplifier (PA) overall efficiency 50% (DCS)
34 dB gain
0 dBm input power
Gain control range >50 dB
Integrated power sensor driver
Low output noise floor of PA <121 dBm/Hz in
DCS/PCS RX band
Wide operating temperature range 20 to +85 °C
LQFP 48-pin package
Compatible with power ramping controller PCA5077 and
GaAs PA power modulator UBA1710.
APPLICATIONS
Hand-held transceivers for DCS/PCS applications (DCS: 1710 to 1785 MHz and PCS: 1850 to 1910 MHz)
1800 MHz Time Division Multiple Access (TDMA) systems.
GENERAL DESCRIPTION
The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 4.8 V battery supply.
The chip also includes a power sensor driver so that no directional coupler is required in the power control loop.
The PA requires only a simple low-pass filter to comply with the DCS/PCS transmit spurious specification. It can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V
DD
I
DD
P
o(max)
T
amb
positive supply voltage 4.5 V positive peak supply current 1.4 A maximum output power 34 dBm operating ambient temperature 20 +85 °C
(1)
MIN. TYP. MAX. UNIT
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
CGY2021G LQFP48 plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm SOT313-2
Page 3
Philips Semiconductors Preliminary specification
DCS/PCS 2 W power amplifier CGY2021G
BLOCK DIAGRAM
handbook, full pagewidth
RFI
(1) Ground pins 1 to 5, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48.
V
DD1
29 33 42
27
(1)
GND
V
GG1
31
V
DD2
CGY2021G
Fig.1 Block diagram.
V
DD3
V
GG2
SENSOR
DRIVER
6,7,8
19
18
DETO/V
DD5
RFO/V
DD4
MGD771
PINNING
SYMBOL PIN DESCRIPTION
GND 1 to 5 ground RFO/V
DD4
6 to 8 PA output and fourth stage supply voltage GND 9 to 17 ground DETO/V V
GG2
DD5
18 power sensor output and supply voltage
19 third and fourth stage negative gate supply voltage GND 20 to 26 ground RFI 27 PA input GND 28 ground V
DD1
29 first stage supply voltage GND 30 ground V
GG1
31 first and second stage negative gate supply voltage GND 32 ground V
DD2
33 second stage supply voltage GND 34 to 41 ground V
DD3
42 third stage supply voltage GND 43 to 48 ground
Page 4
Philips Semiconductors Preliminary specification
DCS/PCS 2 W power amplifier CGY2021G
handbook, full pagewidth
RFO/V RFO/V
RFO/V
GND
GND
GND
GND
GND
DD4 DD4
DD4
GND
GND
GND
GND
GND
DD3
V
GND 43
42
18
19
DD5
GG2
V
DETO/V
GND 41
20
GND
GND 40
21
GND
GND 39
22
GND
GND 38
23
GND
GND
24 37
GND
36 35 34 33 32 31 30 29 28 27 26 25
MGD770
GND GND GND V
DD2
GND V
GG1
GND V
DD1
GND RFI GND GND
GND
GND 47
14
GND
46
15
GND
GND
GND
45
44
CGY2021G
16
17
GND
GND 48
1 2 3 4 5 6 7 8
9 10 11 12
13
GND
Fig.2 Pin configuration.
Page 5
Philips Semiconductors Preliminary specification
DCS/PCS 2 W power amplifier CGY2021G
FUNCTIONAL DESCRIPTION Operating conditions
The CGY2021G is designed to meet the European
The amplifier bias is set by using a negative voltage applied at pins V
GG1
and V
. This negative voltage must
GG2
be present before the supply voltage is applied to the drains to avoid current overstress of the amplifier.
Telecommunications Standards Institute (ETSI) DCS documents, the ETS 300 577 specification, which are defined as follows:
t
= 542.8 µs
on
T = 4.3 ms
Duty cycle = 1/8.
This amplifier is specifically designed for pulse operation allowing the use of a LQFP48 plastic package.
Power sensor driver
The power sensor driver is a buffer amplifier that delivers an output signal at the DETO pin which is proportional to the amplifier power. This signal can be detected by external diodes for power control purpose. As the sensor signal is taken from the input of the last stage of the PA, it is isolated from disturbances at the output by the reverse isolation of the PA output stage. An impedance mismatch at the PA output therefore does not significantly influence
Power amplifier
The Power Amplifier (PA) consists of four cascaded gain stages with an open-drain configuration. Each drain has to be loaded externally by an adequate reactive circuit which
the signal delivered by the power sensor as this normally occurs when power sense is made using a directional coupler. Consequently, the cost and space of using a directional coupler are saved.
also has to be a DC path to the supply.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.
SYMBOL PARAMETER MIN. MAX. UNIT
V
DD
V
GG
T
j(max)
T
stg
P
tot
positive supply voltage 7V negative supply voltage −−10 V maximum operating junction temperature 150 °C IC storage temperature 150 °C total power dissipation 1.3 W
THERMAL CHARACTERISTICS
General operating conditions applied.
SYMBOL PARAMETER VALUE UNIT
R
th j-c
thermal resistance from junction to case; note 1 45 K/W
Note
1. This thermal resistance is a typical value and is measured under DCS/PCS pulse conditions.
Page 6
Philips Semiconductors Preliminary specification
DCS/PCS 2 W power amplifier CGY2021G
DC CHARACTERISTICS
V
= 4.5 V; T
DD
specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
=25°C; peak current values during burst; general operating conditions applied; unless otherwise
amb
Pins RFO/V
V
DD
I
DD
Pins V
GG1
V
GG1
V
GG2
I
GG1+IGG2
DD4,VDD3
and V
, V
, V
DD2
and DETO/V
DD1
positive supply voltage 4.5 V positive peak supply current 1.4 A
GG2
negative supply voltage note 1 −−1.6 V negative supply voltage note 1 −−1.6 V negative peak supply current −−2mA
Note
1. The negative bias V
must be applied 10 µs before the power amplifier is switched on, and must remain applied
GG
until the power amplifier has been switched off.
DD5
Page 7
Philips Semiconductors Preliminary specification
DCS/PCS 2 W power amplifier CGY2021G
AC CHARACTERISTICS
V
= 4.5 V; T
DD
Measured and guaranteed on CGY2021G evaluation board.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Power amplifier
P
i
S
11
f
RF
P
o(max)
η efficiency DCS; at P
R
S
C
S
P
o(off)
N
RX
H2 2nd harmonic level −−40 dBc H3 3rd harmonic level −−35 dBc Stab stability note 2 −−−50 dBc
=25°C; general operating conditions applied; unless otherwise specified.
amb
input power 2 +2 dBm input return loss 50 source; note 1 −−−10 dB RF frequency range DCS 1710 1785 MHz
PCS 1850 1910 MHz
maximum output power T
=25°C; VDD= 4.5 V 33 34 dBm
amb
= 20 to +85 °C; VDD= 4.2 V 31 −−dBm
T
amb
40 50 %
47 %
PCS; at P
o(max) o(max)
optimum series load resistance 6 −Ω optimum series load
11 pF
capacitance isolation PA OFF; Pi= 0 dBm −−50 dBm output noise in RX band −−−121 dBm/Hz
Power sensor driver
P
o(DET)
sensor driver output power RL= 100 ; relative to PA output
−−25 dBc
power into 50 load
Notes
1. Including the 82 resistor connected in parallel at the power amplifier input on the evaluation board.
2. The device is adjusted to provide nominal value of load power into a 50 load. The device is switched off and a 6 : 1 load replaces the 50 load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 seconds test period.
Page 8
Philips Semiconductors Preliminary specification
DCS/PCS 2 W power amplifier CGY2021G
APPLICATION INFORMATION
handbook, full pagewidth
PA
output
(3)
C1
10 pF
C2
TRL1
(3)C3(3)
(1)
48 47 46 45 44 43 42 41 40 39 38 37
V
1 2 3 4 5 6 7
RFO/V
8
9 10 11 12
13 14 15 16 17 18
DD4
12 pF
DD3
CGY2021G
V
DETO
GG2
19 20 21 22 23 24
12 pF
100
nH
6
V
V
V
DD2
GG1
DD1
RFI
10 pF
36 35 34 33 32 31 30 29 28 27 26 25
22pF1
10 pF
100
TRL2
82
nF
47
1 nF
pF
V
GG
1.6 V
PA
(2)
input
1.5 pF
39
180
V
control
0.8 to 3 V
All capacitors are type: SMD0603. Thickness: 0.8 mm; substrate: FR4; εr= 4.7. (1) TRL1: width = 0.3 mm; length = 16 mm. (2) TRL2: width = 0.5 mm; length = 10 mm. (3) the component values are:
SYSTEM C1 (pF) C2 (pF)
BSR14
560
DCS 2.2 1.8 2.2 PCS 1.5 1.5 2.2
V
bat
3.6 V
V
PHP109
DD
1.8
10 nF
C3 (pF)
1.2
V
diode
1 k
BAS70
Fig.3 Evaluation board schematic.
1.25 V
BAS70
1 nF
1 k
1 k
39 pF
MGD772
90 µA
DC output
Page 9
Philips Semiconductors Preliminary specification
DCS/PCS 2 W power amplifier CGY2021G
PACKAGE OUTLINE
LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
c
y
X
36
37
pin 1 index
48
25
Z
24
E
e
w M
b
p
13
A
H
E
E
A
2
A
SOT313-2
Q
(A )
A
1
L
L
3
θ
p
1
e
DIMENSIONS (mm are the original dimensions)
mm
OUTLINE VERSION
SOT313-2
A
A1A2A3bpcE
max.
0.20
0.05
1.45
1.35
IEC JEDEC EIAJ
1.60
UNIT
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
b
p
0.25
w M
D
H
D
0.27
0.17
12
Z
D
B
0 2.5 5 mm
(1)
(1) (1)(1)
D
0.18
0.12
7.1
7.1
6.9
6.9
REFERENCES
v M
v M
scale
eH
H
9.15
0.5
8.85
D
A
B
9.15
8.85
detail X
LLpQZywv θ
E
0.69
0.75
0.45
0.59
0.12 0.10.21.0
EUROPEAN
PROJECTION
Z
D
0.95
0.95
0.55
0.55
ISSUE DATE
93-06-15 94-12-19
E
o
7
o
0
Page 10
Philips Semiconductors Preliminary specification
DCS/PCS 2 W power amplifier CGY2021G
SOLDERING Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our
“IC Package Databook”
Reflow soldering
Reflow soldering techniques are suitable for all LQFP packages.
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.
Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.
Wave soldering
Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
(order code 9398 652 90011).
If wave soldering cannot be avoided, the following conditions must be observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering technique should be used.
The footprint must be at an angle of 45° to the board
direction and must incorporate solder thieves downstream and at the side corners.
Even with these conditions, do not consider wave soldering LQFP packages LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1).
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
1997 Apr 03 10
Page 11
Philips Semiconductors Preliminary specification
DCS/PCS 2 W power amplifier CGY2021G
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Apr 03 11
Page 12
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© Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands 437027/1200/02/pp12 Date of release: 1997 Apr 03 Document order number: 9397 750 02022
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