Page 1
INTEGRATED CIRCUITS
DATA SH EET
CGY2013G
GSM 4 W power amplifier
Preliminary specification
Supersedes data of 1996 Jul 12
File under Integrated Circuits, IC17
1998 Jan 23
Page 2
Philips Semiconductors Preliminary specification
GSM 4 W power amplifier CGY2013G
FEATURES
• Power Amplifier (PA) overall efficiency 52%
• 35.5 dB gain
• 0 dBm input power
• Gain control range >55 dB
• Low output noise floor of PA < −130 dBm/Hz in GSM RX
band
• Wide operating temperature range −20 to +85 °C
• LQFP 48 pin package
• Compatible with power ramping controller PCF5077
• Compatible with GSM RF transceiver SA1620.
APPLICATIONS
• 880 to 915 MHz hand-held transceivers for E-GSM
applications
• 900 MHz Time Division Multiple Access (TDMA)
systems.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V
DD
I
DD
P
o(max)
T
amb
positive supply voltage − 3.6 − V
positive peak supply current − 2.4 − A
maximum output power − 35.5 − dBm
operating ambient temperature −20 − +85
(1)
GENERAL DESCRIPTION
The CGY2013G is a GSM class 4 GaAs Monolithic
Microwave Integrated Circuit (MMIC) power amplifier
specifically designed to operate at 3.6 V battery supply.
The PA requires only a 30 dB harmonic low-pass filter to
comply with the GSM transmit spurious specification.
It can be switched off and its power controlled by
monitoring the actual drain voltage applied to the amplifier
stages.
MIN. TYP. MAX. UNIT
ο
C
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
CGY2013G LQFP48 plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm SOT313-2
1998 Jan 23 2
Page 3
Philips Semiconductors Preliminary specification
GSM 4 W power amplifier CGY2013G
BLOCK DIAGRAM
handbook, full pagewidth
RFI
(1) Ground pins 1 to 4, 9to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48.
V
DD1
29 33 42
27
(1)
GND
V
DD2
V
Fig.1 Block diagram.
GG1
31
V
DD3
CGY2013G
V
GG2
SENSOR
DRIVER
5,6,7,8
19
MGD627
18
DETO/V
DD5
RFO/V
DD4
PINNING
SYMBOL PIN DESCRIPTION
GND 1 to 4 ground
RFO/V
DD4
5 to 8 power amplifier output and fourth stage supply voltage
GND 9 to 17 ground
DETO/V
V
GG2
DD5
18 power sensor output and supply voltage
19 fourth stage negative gate supply voltage
GND 20 to 26 ground
RFI 27 power amplifier input
GND 28 ground
V
DD1
29 first stage supply voltage
GND 30 ground
V
GG1
31 first three stages negative gate supply voltage
GND 32 ground
V
DD2
33 second stage supply voltage
GND 34 to 41 ground
V
DD3
42 third stage supply voltage
GND 43 to 48 ground
1998 Jan 23 3
Page 4
Philips Semiconductors Preliminary specification
GSM 4 W power amplifier CGY2013G
handbook, full pagewidth
RFO/V
RFO/V
RFO/V
RFO/V
GND
GND
GND
GND
DD4
DD4
DD4
DD4
GND
GND
GND
GND
GND
DD3
V
GND
43
42
18
19
DD5
GG2
V
DETO/V
GND
41
20
GND
GND
40
21
GND
GND
39
22
GND
GND
38
23
GND
GND
24 37
GND
36
35
34
33
32
31
30
29
28
27
26
25
MGD628
GND
GND
GND
V
DD2
GND
V
GG1
GND
V
DD1
GND
RFI
GND
GND
GND
GND
47
14
GND
46
15
GND
GND
GND
45
44
CGY2013G
16
17
GND
GND
48
1
2
3
4
5
6
7
8
9
10
11
12
13
GND
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
Operating conditions
The CGY2013G is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the
“ETS 300 577 specification”
, which are
defined as follows:
• ton= 542.8 µs
• T = 4.3 ms
• Duty cycle = 1/8.
The device is specifically designed for pulse operation
allowing the use of a LQFP48 plastic package.
1998 Jan 23 4
Power amplifier
The power amplifier consists of four cascaded gain stages
with an open-drain configuration. Each drain has to be
loaded externally by an adequate reactive circuit which
also has to be a DC path to the supply.
The amplifier bias is set using a negative voltage applied
at pins V
GG1
and V
. This negative voltage must be
GG2
present before the supply voltage is applied to the drains
to avoid current overstress for the amplifier.
Page 5
Philips Semiconductors Preliminary specification
GSM 4 W power amplifier CGY2013G
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.
SYMBOL PARAMETER MIN. MAX. UNIT
V
DD
V
GG
T
j(max)
T
stg
P
tot
THERMAL CHARACTERISTICS
General operating conditions applied.
SYMBOL PARAMETER VALUE UNIT
R
th j-c
Note
1. This thermal resistance is measured under GSM pulse conditions.
positive supply voltage − 7V
negative supply voltage −−10 V
maximum operating junction temperature − 150 °C
IC storage temperature − 150 °C
total power dissipation − 1.5 W
thermal resistance from junction to case; note 1 25 K/W
DC CHARACTERISTICS
V
DD
= 3.6 V; T
=25°C; general operating conditions applied; peak current values during burst; unless otherwise
amb
specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pins RFO/V
V
DD
I
DD
Pins V
GG1
V
GG1
V
GG2
I
GG1+IGG2
DD4,VDD3
and V
, V
, V
DD2
and DETO/V
DD1
DD5
positive supply voltage 0 3.6 5.5 V
positive peak supply current − 2.4 3.0 A
GG2
negative supply voltage note 1 −−1.8 − V
negative supply voltage note 1 −−1.8 − V
negative peak supply current − 2.5 5 mA
Note
1. The negative bias V
GG1
and V
must be applied 10 µs before the power amplifier is switched on, and must remain
GG2
applied until the power amplifier has been switched off.
1998 Jan 23 5
Page 6
Philips Semiconductors Preliminary specification
GSM 4 W power amplifier CGY2013G
AC CHARACTERISTICS
V
= 3.6 V; T
DD
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Power amplifier
P
i
f
RF
P
o(max)
η efficiency V
P
o(min)
N
RX
H2 2nd harmonic level −−−35 dBc
H3 3rd harmonic level −−−35 dBc
Stab stability note 1 −−−70 dBc
=25°C; V
amb
GG1=VGG2
= −1.8 V; measured on Philips demoboard.
input power −2 − +2 dBm
RF frequency range 880 − 915 MHz
maximum output power T
=25°C; VDD= 3.6 V 33.5 35.5 − dBm
amb
T
= −20 to +85 °C; VDD=3V 32 −−dBm
amb
= 3.6 V 42 52 − %
DD
minimum output power VDD< 0.1 V −−20 −15 dBm
output noise in RX band fRF= 925 to 935 MHz at P
= 935 to 960 MHz at P
f
RF
o(max)
o(max)
−−−117 dBm/Hz
−−−125 dBm/Hz
Note
1. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1
load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied
360 electrical degrees during a 60 second period.
1998 Jan 23 6
Page 7
Philips Semiconductors Preliminary specification
GSM 4 W power amplifier CGY2013G
APPLICATION INFORMATION
handbook, full pagewidth
BSR14
V
control
270 Ω
output
1.5 kΩ
470 Ω
39 pF
18 nH 18 nH
100 pF
2.7 pF 1.8 pF
V
bat
PHP212L
10 nF
12 pF
V
DD
150 pF
39 pF
100 pF
27 Ω
3.3 nH
39 pF
150 pF
47 Ω
8.2 nH
CGY2013
CMS TDK
22 nH
39 pF
10 nH
100 Ω
47 Ω
input
1.8 pF
V
GG
MGD629
All SMD size components are 0603.
Fig.3 Evaluation board schematic (FR4, 0.8 mm).
1998 Jan 23 7
Page 8
Philips Semiconductors Preliminary specification
GSM 4 W power amplifier CGY2013G
PACKAGE OUTLINE
LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
c
y
X
36
37
pin 1 index
48
25
Z
24
E
e
A
H
E
E
A
2
A
w M
b
p
13
SOT313-2
(A )
A
1
L
3
θ
L
p
1
e
w M
b
p
D
H
D
12
Z
D
v M
B
v M
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
A1A2A3b
max.
0.20
1.60
0.05
1.45
1.35
0.25
cE
p
0.27
0.18
0.17
0.12
(1)
(1) (1)(1)
D
7.1
6.9
eH
H
7.1
6.9
0.5
9.15
8.85
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
IEC JEDEC EIAJ
REFERENCES
SOT313-2
D
A
B
9.15
8.85
LL
E
0.75
0.45
p
detail X
0.12 0.10.21.0
EUROPEAN
PROJECTION
Z
0.95
0.55
D
Zywv θ
E
0.95
0.55
o
7
o
0
ISSUE DATE
94-12-19
97-08-01
1998 Jan 23 8
Page 9
Philips Semiconductors Preliminary specification
GSM 4 W power amplifier CGY2013G
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
Reflow soldering
Reflow soldering techniques are suitable for all LQFP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
(order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for LQFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
• The footprint must be at an angle of 45° to the board
direction and must incorporate solder thieves
downstream and at the side corners.
Even with these conditions, do not consider wave
soldering LQFP packages LQFP48 (SOT313-2),
LQFP64 (SOT314-2) or LQFP80 (SOT315-1).
1998 Jan 23 9
Page 10
Philips Semiconductors Preliminary specification
GSM 4 W power amplifier CGY2013G
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 23 10
Page 11
Philips Semiconductors Preliminary specification
GSM 4 W power amplifier CGY2013G
NOTES
1998 Jan 23 11
Page 12
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 615 800, Fax. +358 615 80920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 52 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS,
Tel. +30 1 4894 339/911, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 648 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 83749, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 926 5361, Fax. +7 095 564 8323
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165,
252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 825 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1996 SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com/ps/
(1) CGY2013G_N_2 June 26, 1996 11:51 am
Printed in The Netherlands 437027/1200/02/pp12 Date of release: 1998 Jan 23 Document order number: 9397 750 03166
Loading...