The CFH 400 is a high-linearity pHEMT FET that
exhibits both a high intercept point and low noise
figure. The device is suitable for front-end
applications to 4 GHz such as PCS CDMA and
UMTS receivers, base stations LNAs, and WLAN
front-ends. The device achieves a noise figure as
low as 0.55 dB with 15 dB associated gain at 1.8
GHz. It is packaged in a low-cost SOT343
package and is 100% DC tested before
packaging/RF LAT after packaging.
Applications:
• PCS CDMA and UMTS
Receivers
• WLAN Multicarrier
Receivers
• Basestations
Features:
• Low Noise figure and high associated gain
for high IP3 receivers stages
• Frequencies to 4 GHz
• NF=0.55 dB; Ga=15.7 dB @ f=1.8 GHz,
3V, 10 mA
• Low cost miniature SOT343 package
• Lg = 0.4um; Wg = 400um
• Tape and reel packaging
Package Outline,
SOT343:
Pin assignment:
1 = gate
2 = source
3 = drain
4 = source
For further information please visit www.triquint.com pg. 1/6
Rev. 1.2; May 29th, 2003
Page 2
CFH 400 Preliminary Datasheet
Maximum Ratings:
Parameter Symbol Unit
Drain-source voltage VDS 5.5 V
Drain-gate voltage VDG 6.5 V
Gate-source voltage VGS -2.0 V
Drain current ID 80 mA
Channel temperature TCh 150 °C
Storage temperature range T
Total power dissipation (TS < tbd°C) 2
-65...+150 °C
stg
P
150 mW
tot
Thermal resistance
Channel-soldering point source R
1) Dimensions see page 4
2) TS: Temperature measured at soldering point
thChS
166 K/W
Electrical characteristics:
at TA = 25°C unless otherwise specified
Characteristics Symbol min typ max Unit
Drain-source saturation current
VDS = 3 V VGS = 0 V
Pinch-off voltage
VDS = 3 V ID = 1 mA
Gate leakage current
VDS = 3 V ID = 15 mA
I
DSS
V
GS(P)
IG
0
-0.7
-
40
-0.25
-
70
0
5
mA
V
µA
Transconductance
VDS = 3 V ID = 15 mA
Noise figure*
VDS = 3 V ID = 10 mA f = 1.8 GHz
VDS = 3 V ID = 15 mA f = 1.8 GHz
Associated gain*
VDS = 3 V ID = 10 mA f = 1.8 GHz
VDS = 3 V ID = 15 mA f = 1.8 GHz
IIP3*
VDS = 3 V ID = 10 mA f = 1.8 GHz
VDS = 3 V ID = 15 mA f = 1.8 GHz
gm
F
Ga
IIP3
70
-
-
-
100
0.55
0.53
15.7
16.2
6
8.5
-
-
-
-
* Parameters are measured at input impedance for minimum noise figure and output
impedance for maximum gain.
For further information please visit www.triquint.com
Rev. 1.2; May 29th, 2003
pg. 2/6
mS
dB
dB
dBm
Page 3
CFH 400 Preliminary Datasheet
Electrical Characteristics, Continued:
Typical Common Source S – Parameters
@ 3V; 10mA; Zo = 50Ω
f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
Published by TriQuint Semiconductor GmbH, Marketing, Konrad-Zuse-Platz 1, D-81829
Munich.
copyright TriQuint Semiconductor GmbH 2003. All Rights Reserved.
As far as patents or other rights of third parties are concerned, liability is only assumed for
components per se, not for applications, processes and circuits implemented within
components or assemblies.
The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery, and prices please contact the Offices of TriQuint
Semiconductor in Germany or the TriQuint Semiconductor Companies and Representatives
worldwide.
Due to technical requirements components may contain dangerous substances. For information
on the type in question please contact your nearest TriQuint Semiconductors Office.
.
1
For further information please visit www.triquint.com pg. 6/6
Rev. 1.2; May 29th, 2003
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