Datasheet C30641G-TC, C30641G-DTC, C30641G, C30641E, C30619G-DTC Datasheet (PerkinElmer)

EVERYTHING

IN A

NEW

LIGHT.

Description

The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within ±2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.

Devices are available with active areas from

0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q­9858A and AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200°C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.

Large-Area InGaAs
Photodiodes

C30619, C30641, C30642, C30665

Features

•0.5,1.0, 2.0, and 3.0 mm diameters

•High responsi vity from 850 nm to 1550 nm

•High shunt resistance, low dark current

•TE-cooled package options

•Low capacitance for fast response times

Applications

•Power meters

•Fiber identifier s

•Laser burn-in racks

•Near infrared instrumentation

•F.T.I.R. spectroscopy

Package Options

TE-Cooled Devices: Large-area detectors are available
mounted on a 1-stage or 2-stage thermoelectric (TE) cooler.
Cooling increases shunt resistance (see Figure 2) thereby
reducing noise for increased sensitivity. Typical detector
temperature is -10°C with a 1-stage TE cooler or -35°C
using a 2-stage cooler. A TE-cooler option can be specified
by adding the extension -TC (1-stage cooler) or -DTC (2­stage cooler) to the standard part number (see ordering
guide). More information is available from the "TC-Series
Cooled Photodiodes" datasheet from PerkinElmer
Optoelectronics Canada.

Specifications (at VR= VOP(typical), 22°C)

Parameter C30619 C30641 Units

Min Typ Max Min Typ Max

Active Diameter 0.5 1.0 mm
Responsivity At 850 nm 0.10 0.20 0.10 0.20 A/W

At 1300 nm 0.80 0.90 0.80 0.90 A/W
At 1550 nm 0.85 0.95 0.85 0.95 A/W

Shunt Resistance (VR= 10 mV)

1

10 250 5 50 MΩ
Dark Current 1 20 5 50 nA
Spectral Noise Current (10 kHz, 1.0 Hz) 0.02 0.10 0.04 0.15 pA/√Hz
Capacitance At VR= 0V 20 25 100 125 pF

At VR= V

OP

810 4050 pF
Bandwidth (-3 dB, RL= 50Ω) 350 75 MHz
Linearity

2

> +13 > +13 dBm

Available package types D2, D14 D2, D14 -

Operating Ratings

Parameter C30619 C30641 Units

Min Typ Max Min Typ Max

Operating Voltage 0 5 10 0 2 5 V
Breakdown Voltage 20 80 20 80 V
Maximum Forward Current 10 10 mA
Maximum Photocurrent 100 100 mA
Power Dissipation 100 100 mW
Storage Temperature -60 125 -80 125 °C
Operating Temperature -40 85 -40 85 °C

Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR= VOP(typ).

Detector and Pre-Amplifier: Large-area InGaAs detectors are
also available integrated with a preamplifier and TE-cooler. The
HTE-series features large-area InGaAs detectors with a high
gain hybrid transimpedence amplifier mounted on a 2-stage TE
cooler. TE-cooling maximizes sensitivity and stabilizes op-amp
offset and output characteristics. This provides an easy-to-use
high sensitivity detector platform optimized for good temperature
stability over a wide operating temperature range. More
information is available from the HTE-series datasheet. The
standard HTE-2642 incorporates a C30642E chip.

C30619, C30641, C30642, C30665

Specifications (at VR= VOP(typical), 22°C)

Parameter C30642 C30665 Units

Min Typ Max Min Typ Max

Active Diameter 2.0 3.0 mm
Responsivity At 850 nm 0.10 0.20 0.10 0.20 A/W

At 1300 nm 0.80 0.90 0.80 0.90 A/W
At 1550 nm 0.85 0.95 0.85 0.95 A/W

Shunt Resistance (VR= 10 mV)

1

225 110 MΩ

Dark Current 10

3

25

3

nA
Spectral Noise Current (10 kHz, 1.0 Hz) 0.03 0.15 0.04 0.20 pA/√Hz
Capacitance At VR= 0V 300 500 1000 1250 pF

At VR= 2.0V (typical) 150 400 pF
Bandwidth (-3 dB, RL= 50Ω) 20 3.0 MHz
Linearity

2

+11 +11 dBm

Available package types D15 D15 -

Operating Ratings

Parameter C30642 C30665 Units

Min Typ Max Min Typ Max

Operating Voltage 0 5 0 5 V
Breakdown Voltage 15 50 10 50 V
Maximum Forward Current 10 10 mA
Maximum Photocurrent 100 100 mA
Power Dissipation 250 250 mW
Storage Temperature -60 125 -80 125 °C
Operating Temperature -40 85 -40 85 °C

Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR= VOP(typ).
Note 3. At VR= 2.0V

Figure 2. Typical Shunt Resistance as a Function of Temperature.

Figure 1. Typical Responsivity vs. Wavelength.

C30619, C30641, C30642, C30665

Figure 3. Typical Capacitance vs. Operating Voltage.

Figure 4. Typical Dark Current vs. Operating Voltage.

Figure 5. Typical Responsivity Temperature Coefficients.

Figure 6. Typical Responsivity Scan of a 1mm Photodiode.

Figure 7. Package D2: TO-18 Low Profile with Silicon Window. To special order. Figure 8. Package D-14: TO-18 with Glass Window.

C30619, C30641, C30642, C30665

Wavelength

(nm)

850
1060
1300
1550
1650

Temperature

Coefficient

1

(%/°C)

-0.121

0.039

0.012

0.009

0.085

1.287

(20°C to 85°C)

(-40°C to 20°C)

Note1: Measured from -40°C to +85°C except

1650nm, as indicated.

Ordering Guide

C30619, C30641, C30642, C30665

For more information e-mail us at [e-mail] or visit our web site at www.perkinelmer.com/opto

All values are nominal; specifications subject to change without notice.

is a registered trademark of PerkinElmer, Inc.

PerkinElmer Optoelectronics

22001 Dumberry Road,

Vaudreuil, Québec

Canada J7V 8P7

Phone: [phone]

Fax: [phone]

©2000 PerkinElmer, Inc.
All rights reserved.
0700

Device Package Availability

Window Window Package T ype
Option T ype C30619 C30641 C30642 C30665

E Silicon D2

1

D2

1

--

G Glass D14 D14 D15 D15

Note 1: Special Order

TE-Cooler Option: TC: 1-stage TE cooler
DTC: 2-stage TE cooler
(Not yet available for C30665)

Window Option: E: Silicon
G: Glass
(See below for availability)

Chip Type: 619: 0.5mm diameter
641: 1.0mm diameter
642: 2.0mm diameter
665: 3.0mm diameter

# # # L-X X X

C30

Figure 9. Package D15: TO-5 with Glass Window.