Page 1
BUF405A
HIGH VOLTAGE FAST-SWITCHING
■ HIGH SWITCHING SPEEDNPNPOWER
TRANSISTORS
■ EASY TODRIVE
■ HIGH VOLTAGEFOR OFF-LINE
APPLICATIONS
■ 100 KHz SWITCHING SPEED
■ LOW COST DRIVE CIRCUITS
■ LOW DYNAMIC SATURATION
APPLICATIONS:
■ SWITCHMODEPOWER SUPPLIES
■ MOTORDRIVERS
DESCRIPTION
These Easy-to-Drive FASTSWITCH NPN power
transistors are specially designed for high
reliabilityindustrial and professional power driving
applications such us motor drives and off-line
switching power supplies. ETD transistors will
operate using easy drive circuitsat up to 100KHz;
this helps to simplify designs and improve
reliability. The superior switching performance
and low crossover losses reduce dissipation and
consequently lowers the equipment operating
temperature.
BUF405AFP
NPN POWER TRANSISTORS
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Param et e r Val ue Uni t
BUF405A BUF405AFP
V
V
V
I
I
P
T
January 1999
Colle ct or-E mitt er Voltag e (VBE= -1.5 V) 1000 V
CEV
Colle ct or-E mitt er Voltag e (IB= 0 ) 450 V
CEO
Emitter-Base Voltage (IC=0) 7 V
EBO
I
Collector Current 7.5 A
C
Collector Peak Current ( tp<5ms) 15 A
CM
I
Base Current 3 A
B
Base Peak Current (tp<5ms) 4.5 A
BM
Tota l Dissipation at Tc=25oC8039W
tot
St orage Temperature -65 t o 150
stg
T
Max Operat io n J u nction Tempe r ature 150
j
o
C
o
C
1/6
Page 2
BUF405A / BUF405AFP
THERMAL DATA
R
thj-case
Ther mal Resist an c e Junction-C ase Max 1.56 3.2
TO - 2 20 TO-220F P
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Mi n. Typ. Max. Un it
I
CER
I
CEV
I
EBO
V
CEO(sus )
Collec t or Cut -off
Current (R
BE
=5Ω)
Collec t or Cut -off
Current (I
B
=0)
Emitt er Cut-off Curren t
=0)
(I
C
∗ Collec t or -Emitter
V
CE=VCEV
VCE=V
V
V
V
CEVTc
CE=VCEVVBE
CE=VCEVVBE
=5V 1 mA
BE
=100oC
=-1.5V
=-1.5V Tc=100oC
0.1
0.5
0.1
0.5
IC= 20 0 mA L = 25 mH 450 V
Sust aining Volt age
V
V
CE(sat)
EBO
Emit ter Base V olt a ge
=0)
(I
C
∗ Co llector -Emitter
Saturation Voltage
V
∗ Ba se- Emitt er
BE(sat )
Saturation Voltage
di
/dt Rate of r is e on-state
c
Collec t or Curr ent
V
(3µs) Collector-Emitter
CE
Dynamic Voltage
V
(5µs) Collector-Emitter
CE
Dynamic Voltage
INDUCTI V E LOAD
t
t
Storage Time
s
t
Fall Time
f
Cross Over T ime
c
INDUCTI V E LOAD
V
t
t
CEW
Storage Time
s
t
Fall Time
f
Cross Over T ime
c
Maximum Collect or
Emitt er Voltage
without Snubber
INDUCTI V E LOAD
t
t
Storage Time
s
t
Fall Time
f
Cross Over T ime
c
I
=50mA 7 V
E
IC=2.5A IB=0.25A
=2.5A IB=0.25A Tc=100oC
I
C
=5A IB=1A
I
C
=5A IB=1A Tc=100oC
I
C
IC=2.5A IB=0.25A
=2.5A IB=0.25A Tc=100oC
I
C
=5A IB=1A
I
C
=5A IB=1A Tc=100oC
I
C
=300V RC=0 tp=3µs
V
CC
=0.375A Tj=25oC
I
B1
=0.375A Tj=100oC
I
B1
=1.5A Tj=100oC
I
B1
=300V RC=120Ω
V
CC
=0.375A Tj=25oC
I
B1
=300V RC=120Ω
V
CC
I
=0.375A Tj=25oC
B1
=100oC
T
j
=100oC
T
j
30
60
0.8
2.8
0.5
2
0.9
1.5
1.1
1.5
40 A/µs
2.1
8
1.1
4
IC=2.5A VCC=50V
=-5V RBB=2.4 Ω
V
BB
=400V IB1=0.25A
V
clamp
L=1mH
0.8
0.05
0.08
IC=2.5A VCC=50V
=-5V RBB=2.4 Ω
V
BB
V
=400V IB1=0.25A
clamp
L=1mH T
=100oC
j
IC = 2.5 A VCC=50V
=-5V RBB=2.4 Ω
V
BB
=400V IB1=0.25A
V
clamp
L=1mH T
=125oC
j
500 V
1.8
0.1
0.18
IC=2.5A VCC=50V
=0 RBB=0.6Ω
V
BB
=400V IB1=0.25A
V
clamp
L=1mH
1.5
0.04
0.07
mA
mA
mA
mA
V
V
V
V
V
V
V
V
A/µs
A/µs
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/6
Page 3
BUF405A / BUF405AFP
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Cond ition s Mi n. Typ. Max. Un it
INDUCTI V E LOAD
V
t
t
CEW
Storage Time
s
t
Fall Time
f
Cross Over T ime
c
Maximum Collect or
Emitt er Voltage
without Snubber
INDUCTI V E LOAD
t
t
Storage Time
s
t
Fall Time
f
Cross Over T ime
c
INDUCTI V E LOAD
V
t
t
CEW
Storage Time
s
t
Fall Time
f
Cross Over T ime
c
Maximum Collect or
Emitt er Voltage
without Snubber
∗
Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 %
IC=2.5A VCC=50V
=0 RBB=0.6Ω
V
BB
=400V IB1=0.25A
V
clamp
L=1mH T
=100oC
j
IC = 2.5 A VCC=50V
=0 RBB=0.6Ω
V
BB
V
=400V IB1=0.25A
clamp
L=1mH T
=125oC
j
IC=5A VCC=50V
=-5V RBB=2.4Ω
V
BB
=400V IB1=1A
V
clamp
L=0.5mH
IC=5A VCC=50V
=-5V RBB=2.4 Ω
V
BB
=400V IB1=1A
V
clamp
L=0.5mH T
=100oC
j
ICWoff = 7.5 A VCC=50V
=-5V RBB=2.4Ω
V
BB
L = 0.33 mH I
=125oC
T
j
=1.5A
B1
3
0.15
0.25
500 V
1.9
0.06
0.12
3.2
0.12
0.3
400 V
µs
µs
µs
µs
µs
µs
µs
µs
µs
Turn-onSwitching Test Circuit Turn-off Switching TestCircuit
1 F ast electron ic switch 2 Non-inductive Resistor
1 Fast electronic switch 2 Non-inductive Resistor
3 F ast recove r y rectif ier
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Page 4
BUF405A / BUF405AFP
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
4/6
P011C
Page 5
TO-220FP MECHANICAL DATA
BUF405A / BUF405AFP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
5/6
Page 6
BUF405A / BUF405AFP
Information furnished isbelieved tobeaccurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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