Page 1
1
Motorola Bipolar Power Transistor Device Data
$ " $# %
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"'&'(%'#" ')#%
The BUD44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V
CE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
It’s characteristics make it also suitable for PFC application.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
400
Vdc
Collector–Base Breakdown Voltage
V
CBO
700
Vdc
Collector–Emitter Breakdown Voltage
V
CES
700
Vdc
Emitter–Base Voltage
V
EBO
12
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
2
5
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
1
2
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
25
0.2
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
R
θJC
R
θJA
5
71.4
_
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from case for 5 seconds
T
L
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUD44D2/D
Motorola, Inc. 1995
CASE 369–07
POWER TRANSISTORS
2 AMPERES
700 VOLTS
25 WATTS
CASE 369A–13
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
6.7
0.265
1.6
0.063
2.3
0.090
2.3
0.090
1.6
0.063
30
0.118
1.8
.070
″
6.7
0.265
″
Page 2
BUD44D2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
400
470
Vdc
Collector–Base Breakdown Voltage
(I
CBO
= 1 mA)
V
CBO
700
920
Vdc
Emitter–Base Breakdown Voltage
(I
EBO
= 1 mA)
V
EBO
12
14.5
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
@ TC = 25°C
@ TC = 125°C
I
CEO
50
500
µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
I
CES
50
500
100
µAdc
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
I
EBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
0.78
0.65
0.9
0.8
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
0.87
0.76
1
0.9
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 20 mAdc)
@ TC = 25°C
@ TC = 125°C
0.45
0.67
0.65
1
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
0.25
0.27
0.4
0.5
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
0.28
0.35
0.5
0.6
DC Current Gain
(IC = 0.4 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
20
18
32
26
(IC = 1 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
10
7
14
9.5
(IC = 2 Adc, VCE = 5 Vdc)
@ TC = 25°C
8
11
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 0.2 Adc)
@ TC = 25°C
0.8
1
(IEC = 0.2 Adc)
@ TC = 125°C
0.6
(IEC = 0.4 Adc)
@ TC = 25°C
0.9
1.2
(IEC = 1 Adc)
@ TC = 25°C
1.1
1.5
Forward Recovery Time (see Figure 22 bis)
(IF = 0.2 Adc, di/dt = 10 A/µs)
@ TC = 25°C
415
(IF = 0.4 Adc, di/dt = 10 A/µs)
@ TC = 25°C
390
(IF = 1 Adc, di/dt = 10 A/µs)
@ TC = 25°C
340
V
BE(sat)
Vdc
V
CE(sat)
h
FE
V
EC
T
Vdc
fr
—
V
ns
Page 3
BUD44D2
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
ÎÎÎ
ÎÎÎ
ÎÎÎ
Typ
Max
Unit
DYNAMIC SATURATION VOLTAGE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 1 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.3
6.8
Dynamic Saturation
Voltage:
Determined 1 µs and
IB1 = 40 mA
VCC = 300 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 3 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.5
1.3
µs and
3 µs respectively after
rising IB1 reaches
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 1 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
4.4
12.8
90% of final I
B1
IB1 = 0.2 A
VCC = 300 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 3 µs
@ TC = 25°C
@ TC = 125°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.5
1.8
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
ÎÎÎ
ÎÎÎ
ÎÎÎ
50
75
pF
Input Capacitance
(VEB = 8 Vdc)
C
ib
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
240
500
pF
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
90
105
150
ns
Turn–off Time
IB2 = 0.5 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.1
1.5
1.25
µs
Turn–on Time
@ TC = 25°C
@ TC = 125°C
t
on
400
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
600
600
ns
Turn–off Time
IB2 = 250 mAdc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
t
off
750
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1300
1000
ns
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
110
105
150
ns
Storage Time
IC = 0.4 Adc
IB1 = 40 mAdc
I
= 0.2 Adc
@ TC = 25°C
@ TC = 125°C
t
s
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.55
0.7
0.75
µs
Crossover Time
IB2 = 0.2 Adc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
85
80
150
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
90
150
ns
Storage Time
IC = 1 Adc
IB1 = 0.2 Adc
I
= 0.5 Adc
@ TC = 25°C
@ TC = 125°C
t
s
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.05
1.45
1.5
µs
Crossover Time
IB2 = 0.5 Adc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
100
175
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
110
180
150
ns
Storage Time
IC = 0.8 Adc
IB1 = 160 mAdc
I
= 160 mAdc
@ TC = 25°C
@ TC = 125°C
t
s
2.05
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.8
2.35
µs
Crossover Time
IB2 = 160 mAdc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
180
400
300
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
150
175
225
ns
Storage Time
IC = 0.4 Adc
IB1 = 40 mAdc
I
= 40 mAdc
@ TC = 25°C
@ TC = 125°C
t
s
1.65
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.2
1.95
µs
Crossover Time
IB2 = 40 mAdc
@ TC = 25°C
@ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
150
330
250
ns
IC = 0.4 A
V
CE(dsat)
IC = 1 A
IC = 1 Adc, IB1 = 0.2 Adc
IC = 0.5 Adc, IB1 = 50 mAdc
V
Page 4
BUD44D2
4
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
80
60
40
20
0
1010.10.010.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –20°C
VCE = 1 V
Figure 2. DC Current Gain @ 5 Volt
100
80
60
40
20
0
1010.10.010.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –20°C
VCE = 5 V
Figure 3. Collector Saturation Region
4
2
0
1000100101
IB, BASE CURRENT (mA)
IC = 200 mA
Figure 4. Collector–Emitter Saturation Voltage
10
1
0.1
1010.10.010.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
°
C
TJ = 25°C
TJ = –20°C
IC/IB = 5
V
CE
, VOLTAGE (VOLTS)
V
CE
, VOLTAGE (VOLTS)
3
1
TJ = 25°C
1 A
1.5 A
2 A
Figure 5. Collector–Emitter Saturation Voltage
10
1
0.1
100.10.010.001
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Collector–Emitter Saturation Voltage
10
1
0.1
10.10.010.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
°
C
TJ = 25°C
TJ = –20°C
V
CE
, VOLTAGE (VOLTS)
V
CE
, VOLTAGE (VOLTS)
1
IC/IB = 10
TJ = 125°C
TJ = 25°C
TJ = –20°C
IC/IB = 20
400 mA
Page 5
BUD44D2
5
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 7A. Base–Emitter Saturation Region
10
1
0.1
100.10.010.001
IC, COLLECTOR CURRENT (AMPS)
Figure 7B. Base–Emitter Saturation Region
10
1
0.1
100.10.010.001
IC, COLLECTOR CURRENT (AMPS)
V
BE
, VOLTAGE (VOLTS)
V
BE
, VOLTAGE (VOLTS)
1
TJ = 125°C
TJ = 25°C
TJ = –20°C
IC/IB = 10
1
IC/IB = 5
Figure 7C. Base–Emitter Saturation Region
10
1
0.1
10.10.010.001
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Forward Diode Voltage
10
1
0.1
100.10.01
REVERSE EMITTER–COLLECTOR CURRENT (AMPS)
125
°
C
25°C
V
BE
, VOLTAGE (VOLTS)
FORWARD DIODE VOLTAGE (VOLTS)
1
IC/IB = 20
TJ = 25°C
TJ = –20°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = –20°C
Page 6
BUD44D2
6
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
Figure 9. Capacitance
1000
10
1
100101
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Resistive Switch Time, t
on
1000
400
0
20.80.2
IC, COLLECTOR CURRENT (AMPS)
C, CAPACITANCE (pF)
1.4
t, TIME (ns)
800
600
200
100
Cib (pF)
Cob (pF)
TJ = 25°C
f
(test)
= 1 MHz
TJ = 125
°
C
TJ = 25
°
C
IC/IB = 10
IC/IB = 5
I
Bon
= I
Boff
VCC = 300 V
PW = 40
µ
s
Figure 11. Resistive Switch Time, t
off
4000
2500
1000
210
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Inductive Storage Time,
tsi @ IC/IB = 5
3
1
0
20.80.4
IC, COLLECTOR CURRENT (AMPS)
1.6
2
1.5
0.5
3000
t, TIME ( s)
µ
t, TIME ( s)
µ
3500
2000
1500
TJ = 125°C
TJ = 25
°
C
IC/IB = 10
IC/IB = 5
I
Bon
= I
Boff
VCC = 300 V
PW = 40 µs
2.5
1.2
TJ = 125°C
TJ = 25
°
C
I
Bon
= I
Boff
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
Figure 13. Inductive Switching,
tc & tfi @ IC/IB = 5
700
400
0
210
IC, COLLECTOR CURRENT (AMPS)
Figure 14. Inductive Storage Time
4
2
0
1563
hFE, FORCED GAIN
12
3
1
500
t, TIME (ns)
600
300
200
9
, STORAGE TIME (t
si
µ
s)
100
0.5 1.5
TJ = 125°C
TJ = 25
°
C
IC = 1 A
IC = 0.3 A
I
Bon
= I
Boff
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
TJ = 125°C
TJ = 25
°
C
I
Bon
= I
Boff
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
IC/IB = 5
t
c
t
fi
Page 7
BUD44D2
7
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
Figure 15. Inductive Fall Time
700
0
1593
hFE, FORCED GAIN
Figure 16. Inductive Crossover Time
1000
400
0
1563
hFE, FORCED GAIN
12
800
600
200
500
Figure 17. Inductive Switching, t
fi
900
600
0
21.20.4
IC, COLLECTOR CURRENT (AMPS)
Figure 18. Inductive Switching, t
c
2000
0
20.80.4
IC, COLLECTOR CURRENT (AMPS)
1.6
1500
1000
500
700
t, TIME (ns)
t, TIME (ns)
800
500
400
TJ = 125°C
TJ = 25
°
C
IC/IB = 20
1.2
Figure 19. Inductive Storage Time, t
si
3000
0
310
IC, COLLECTOR CURRENT (AMPS)
Figure 20. Inductive Storage Time, t
si
3000
1500
500
20.50
IC, COLLECTOR CURRENT (AMPS)
1.5
2500
1000
2000
t, TIME (ns)
1000
10.5 1.5
I
Bon
= I
Boff
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
TJ = 125°C
TJ = 25
°
C
I
Bon
= I
Boff
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
t
fi
, FALL TIME (ns)
t
c
, CROSSOVER TIME (ns)
600
400
300
200
100
5 7 11 13
TJ = 125°C
TJ = 25
°
C
IC = 0.3 A
IC = 1 A
I
Boff
= I
Bon
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
9
I
Bon
= I
Boff
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
TJ = 125°C
TJ = 25
°
C
IC = 1 A
IC = 0.3 A
300
200
100
0.8 1.6
IC/IB = 10
I
Bon
= I
Boff
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
TJ = 125°C
TJ = 25
°
C
I
Boff
= IC/2
VCC = 15 V
VZ = 300 V
LC = 200
µ
H
IC/IB = 20
IC/IB = 10
t, TIME (ns)
2 2.5
IC/IB = 5
IB = 50 mA
IB = 100 mA
IB = 200 mA
IB = 500 mA
2000
IC/IB = 20
IC/IB = 10
Page 8
BUD44D2
8
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
Figure 21. Dynamic Saturation
Voltage Measurements
TIME
Figure 22. Inductive Switching Measurements
10
4
0
820
TIME
6
8
6
2
Figure 22 bis. tfr Measurements
0
1060
V
F
I
F
4
2 8
9
7
5
3
1
1 3 5
7
V
CE
0 V
I
B
90% I
B
1 µs
3 µs
dyn 1 µs
dyn 3 µs
I
B
I
C
V
clamp
t
c
t
fi
90% I
C
10% I
C
90% I
B1
4
10% V
clamp
VFR (1.1 VF unless otherwise specified)
V
FRM
t
fr
V
F
0.1 V
F
10% I
F
t
si
Page 9
BUD44D2
9
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
V
(BR)CEO(sus)
L = 10 mH
RB2 =
∞
VCC = 20 Volts
I
C(pk)
= 100 mA
Inductive Switching
L = 200
µ
H
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired I
B1
RBSOA
L = 500
µ
H
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired I
B1
+15 V
1
µ
F
150
Ω
3 W
100
Ω
3 W
MPF930
+10 V
50
Ω
COMMON
–V
off
500
µ
F
MPF930
MTP8P10
MUR105
MJE210
MTP12N10
MTP8P10
150
Ω
3 W
100
µ
F
I
out
A
R
B1
R
B2
1
µ
F
IC PEAK
VCE PEAK
V
CE
I
B
I
B1
I
B2
TYPICAL STATIC CHARACTERISTICS
Figure 23. BVCER
1100
700
400
100010010
RBE (
Ω
)
Figure 24. Forward Recovery Time t
fr
440
360
300
210.50
IF, FORWARD CURRENT (AMP)
dI/dt = 10 A/µs
TC = 25
°
C
BVCER (VOLTS)
TJ = 25°C
1.5
BVCER (VOLTS) @ 10 mA
t
fr
, FORWARD RECOVERY TIME (ns)
1000
900
800
600
500
420
400
380
340
320
BVCER(sus) @ 200 mA
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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Page 10
BUD44D2
10
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 369–07
ISSUE K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1 2 3
4
V
S
A
K
–T–
SEATING
PLANE
R
B
F
G
D
3 PL
M
0.13 (0.005) T
C
E
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
G
0.090 BSC 2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.175 0.215 4.45 5.46
S 0.050 0.090 1.27 2.28
V 0.030 0.050 0.77 1.27
CASE 369A–13
ISSUE W
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
–T–
SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
G 0.180 BSC 4.58 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
R 0.175 0.215 4.45 5.46
S 0.020 0.050 0.51 1.27
U 0.020 ––– 0.51 –––
V 0.030 0.050 0.77 1.27
Z 0.138 ––– 3.51 –––
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1 2 3
4
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