Page 1
1
Motorola Bipolar Power Transistor Device Data
The BUD43B has an application specific state–of–the–art die designed for use in
220 V l ine operated Switchmode Power supplies and electronic b allast (“light
ballast”). The main advantages brought by this new transistor are:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast and Tightened Switching Distributions
— No Coil Required in Base Circuit for Fast Turn–off
— (no current tail)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
350
Vdc
Collector–Base Breakdown Voltage
V
CBO
650
Vdc
Collector–Emitter Breakdown Voltage
V
CES
650
Vdc
Emitter–Base Voltage
V
EBO
9
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
2
4
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
1
2
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
25
0.2
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
R
θJC
R
θJA
5
71.4
_
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from case for 5 seconds
T
L
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUD43B/D
Motorola, Inc. 1995
CASE 369–07
POWER TRANSISTORS
2 AMPERES
700 VOLTS
25 WATTS
CASE 369A–13
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
6.7
0.265
1.6
0.063
2.3
0.090
2.3
0.090
1.6
0.063
30
0.118
1.8
.070
″
6.7
0.265
″
Page 2
BUD43B
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
350
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
I
CEO
100
µAdc
Collector Cutoff Current @ TC = 25°C
(VCE = Rated V
CES
, VBE = 0) @ TC = 125°C
I
CES
10
200
µAdc
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
I
EBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.5 Adc)
V
BE(sat)
125
Vdc
Collector–Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.5 Adc) @ TC = 25°C
V
CE(sat)
1
Vdc
DC Current Gain
(IC = 1 Adc, VCE = 2 Vdc) @ TC = 25°C
(IC = 2 Adc, VCE = 5 Vdc) @ TC = 25°C
h
FE
8
6
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
40
pF
Input Capacitance
(VEB = 8 V)
C
ib
400
pF
SWITCHING CHARACTERISTICS (Resistive Load) (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–on Time
(IC = 1.2 Adc, IB1 = 0.4 Adc,
IB2 = 0.1 Adc, VCC = 300 V)
@ TC = 25°C
t
off
4.7
5.8
µs
Fall Time
(IC = 2.5 Adc, IB1 = 0.5 Adc,
IB2 = 0.5 Adc, VCC = 150 V)
@ TC = 25°C
t
f
800
ns
Page 3
BUD43B
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 369–07
ISSUE K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1 2 3
4
V
S
A
K
–T–
SEATING
PLANE
R
B
F
G
D
3 PL
M
0.13 (0.005) T
C
E
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
G
0.090 BSC 2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.175 0.215 4.45 5.46
S 0.050 0.090 1.27 2.28
V 0.030 0.050 0.77 1.27
CASE 369A–13
ISSUE W
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
–T–
SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
G 0.180 BSC 4.58 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC 2.29 BSC
R 0.175 0.215 4.45 5.46
S 0.020 0.050 0.51 1.27
U 0.020 ––– 0.51 –––
V 0.030 0.050 0.77 1.27
Z 0.138 ––– 3.51 –––
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1 2 3
4
Page 4
BUD43B
4
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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BUD43B/D
*BUD43B/D*
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