Datasheet BUB323Z Datasheet (ON Semiconductor)

BUB323Z

Î

NPN Silicon Power Darlington

High Voltage Autoprotected D2PAK for Surface Mount

The BUB323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control.

Features

• Integrated High−Voltage Active Clamp

• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed

Over the −40°C to +125°C Temperature Range

• Clamping Energy Capability 100% Tested in a Live

Ignition Circuit

• High DC Current Gain/Low Saturation Voltages

Specified Over Full Temperature Range

• Design Guarantees Operation in SOA at All Times

• Pb−Free Packages are Available

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AUTOPROTECTED

DARLINGTON

10 AMPERES

360−450 VOLTS CLAMP

150 WATTS

360 V

CLAMP

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage Collector−Emitter Voltage Collector Current − Continuous

− Peak

Base Current − Continuous

ОООООООООО

− Peak

Total Power Dissipation

@ TC = 25_C

ОООООООООО

Derate above 25_C

ОООООООООО

Operating and Storage Junction

Temperature Range

V

CEO

V

EBO

I

C

I

CM

I

B

ÎÎ

I

BM

P

D

ÎÎ

TJ, T

stg

350

6.0 10

20

3.0

Î

6.0

150

Î

1.0

Î

− 65 to +175

Vdc Vdc Adc

Adc

Î

W/_C

Î

_C

W

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature

ОООООООООО

for Soldering Purposes, 1/8 in from Case for 5 Seconds

ОООООООООО

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

Symbol

R

q

JC

R

q

JA

T

L

ÎÎ

Max

1.0

62.5 260

Î

Unit

_C/W _C/W

_C

Î

MARKING DIAGRAM

BUB323ZG AYWW

D2PAK

CASE 418B

STYLE 1

BUB323Z = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

August, 2005 − Rev. 1

1 Publication Order Number:

BUB323Z/D

BUB323Z

Î

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS (Note 1)

Collector−Emitter Clamping Voltage (IC = 7.0 A)

= −40°C to +125°C)

(T

C

ООООООООООООООООО

Collector−Emitter Cutoff Current

(VCE = 200 V, IB = 0)

Emitter−Base Leakage Current

ООООООООООООООООО

(VEB = 6.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

Base−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 100 mAdc)

ООООООООООООООООО

(IC = 10 Adc, IB = 0.25 Adc)

Collector−Emitter Saturation Voltage

ООООООООООООООООО

(IC = 7.0 Adc, IB = 70 mAdc)

ООООООООООООООООО

(IC = 8.0 Adc, IB = 0.1 Adc)

ООООООООООООООООО

(IC = 10 Adc, IB = 0.25 Adc)

ООООООООООООООООО

(TC = 125°C)

Base−Emitter On Voltage

(IC = 5.0 Adc, VCE = 2.0 Vdc) (TC = −40°C to +125°C) (IC = 8.0 Adc, VCE = 2.0 Vdc)

ООООООООООООООООО

Diode Forward Voltage Drop

(IF = 10 Adc)

ООООООООООООООООО

DC Current Gain

(IC = 6.5 Adc, VCE = 1.5 Vdc) (TC = −40°C to +125°C) (IC = 5.0 Adc, VCE = 4.6 Vdc)

ООООООООООООООООО

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance

ООООООООООООООООО

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 6.0 V)

ООООООООООООООООО

CLAMPING ENERGY (See Notes)

Repetitive Non−Destructive Energy Dissipated at turn−off:

(IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4)

SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)

Fall Time Storage Time Cross−over Time

ООООООООООО

(IC = 6.5 A, IB1 = 45 mA,

V

BE(off)

= 0, R

BE(off)

= 0,

VCC = 14 V, VZ = 300 V)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.

Symbol

V

CLAMP

ÎÎÎ

I

CEO

I

EBO

ÎÎÎ

V

BE(sat)

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(on)

ÎÎÎ

V

F

ÎÎÎ

h

FE

ÎÎÎ

f

T

C

ob

ÎÎÎ

C

ib

ÎÎÎ

W

CLAMP

t

fi

t

si

t

c

Min

350

Î

−

Î

−

Î

−

Î

−

Î

−

Î

−

Î

1.1

1.3

Î

−

Î

150 500

Î

−

Î

−

Î

200

−

Typ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

ÎÎ

−

625

10

1.7

Max

450

ÎÎ

100

50

ÎÎ

2.2

ÎÎ

2.5

ÎÎ

1.6

1.8

ÎÎ

1.8

ÎÎ

2.1

1.7

ÎÎ

2.1

2.3

ÎÎ

2.5

ÎÎ

−

3400

ÎÎ

2.0

200

ÎÎ

550

ÎÎ

−

30

−

Unit

Vdc

Î

mAdc

Î

Vdc

Î

Vdc

Î

Vdc

Î

Vdc

Î

−

Î

MHz

pF

Î

pF

Î

mJ

ns

ms ms

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2

I

C

I

= 6.5 A

NOM

Icer Leakage Current

Output transistor turns on: I

High Voltage Circuit turns on: IC = 20 mA

Avalanche diode turns on: IC = 100 mA

250 V 300 V 340 V

= 40 mA

C

V

CLAMP

V

CE

NOMINAL

= 400 V

BUB323Z

I

CURRENT

B

SOURCE

MERCURY CONTACTS WETTED RELAY

R

= 100 W

BE

V

BEoff

IB2 SOURCE

L INDUCTANCE

(8 mH)

V

CE

MONITOR

(V

)

GATE

I

C

MONITOR

IC CURRENT SOURCE

0.1 W NON INDUCTIVE

Figure 1. IC = f(VCE) Curve Shape

By design, the BU323Z has a built−in avalanche diode and a special high voltage driving circuit. During an auto−protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in “FBSOA.” Because of the built−in zener and associated network, the IC = f(VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1.

Figure 2. Basic Energy Test Circuit

The bias parameters, V

CLAMP

, IB1, V

BE(off)

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3

I

CPEAK

I

CPEAK

BUB323Z

I

C

The shaded area represents the amount of energy the de-

IC HIGH

vice can sustain, under given DC biases (IC/IB/V RBE), without an external clamp; see the test schematic diagram, Figure 2.

The transistor PASSES the Energy test if, for the inductive

load and I

CPEAK/IB/VBE(off)

the shaded area and greater than the V

IC LOW

V

(a)

I

C

V

GATE

IC HIGH

MIN

Figure 4a.

CE

biases, the VCE remains outside

minimum limit,

GATE

BE(off)

/

I

CPEAK

I

CPEAK

IC LOW

V

CE

(b)

I

C

V

GATE

MIN

The transistor FAILS if the VCE is less than the V

GATE

(minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die,

IC HIGH

and the transistor is not damaged, thus enabling the sustained energy level required.

IC LOW

V

CE

(c)

I

C

V

GATE

IC HIGH

MIN

The transistor FAILS if its Collector/Emitter breakdown

voltage is less than the V

value, Figure 4d.

GATE

(d)

IC LOW

V

CE

V

MIN

GATE

Figure 4. Energy Test Criteria for BU323Z

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4

BUB323Z

10000

1000

, DC CURRENT GAIN

100

FE

h

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

10000

TYPICAL

T

= 125°C

J

1000

−40°C

25°C

VCE = 1.5 V

10

100001000100

IC, COLLECTOR CURRENT (MILLIAMPS)

, DC CURRENT GAIN

FE

h

Figure 5. DC Current Gain

IC = 3 A

5 A

0

IB, BASE CURRENT (MILLIAMPS)

8 A

10 A

7 A

TJ = 25°C

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

100101

100

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

TYP + 6Σ

VCE = 5 V, TJ = 25°C

10

IC, COLLECTOR CURRENT (MILLIAMPS)

Figure 6. DC Current Gain

IC/IB = 150

25°C

IC, COLLECTOR CURRENT (AMPS)

TYP − 6Σ

10000

1000001000100

TJ = 125°C

1010.1

, BASE−EMITTER VOLTAGE (VOLTS)

BE

V

Figure 7. Collector Saturation Region

2.0

1.8

1.6

1.4

1.2

1.0

0.8

IC/IB = 150

TJ = 25°C

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Base−Emitter Saturation Voltage

125°C

Figure 8. Collector−Emitter Saturation Voltage

2.0 VCE = 2 VOLTS

1.8

1.6

1.4

1.2

1.0

, BASE−EMITTER VOLTAGE (VOLTS)

0.8

BE(on)

V

0.6

1010.1

TJ = 25°C

125°C

1010.1

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Base−Emitter “ON” Voltages

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5

BUB323Z

ORDERING INFORMATION

Device Package Shipping

BUB323Z D2PAK 50 Units / Rail BUB323ZG D2PAK

(Pb−Free) BUB323ZT4 D2PAK 800 Units / Tape & Reel BUB323ZT4G D2PAK

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

50 Units / Rail

800 Units / Tape & Reel

†

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6

−B−

4

231

−T−

SEATING PLANE

VARIABLE CONFIGURATION ZONE

G

M

S

D

3 PL

0.13 (0.005) T

M

R

L

M

BUB323Z

PACKAGE DIMENSIONS

D2PAK

CASE 418B−04

ISSUE J

C

E

V

W

A

K

H

M

B

N P

W

J

U

L

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

L

MILLIMETERSINCHES

F

VIEW W−W VIEW W−W VIEW W−W

123

F

SOLDERING FOOTPRINT*

8.38

0.33

10.66

0.42

17.02

0.67

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

1.016

3.05

0.12

SCALE 3:1

0.04

ǒ

inches

5.08

0.20

mm

Ǔ

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7

BUB323Z

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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BUB323Z/D

8