Datasheet BU931P, BU931 Datasheet (SGS Thomson Microelectronics)

BU931



HIGH VOLTAGE IGNITION COIL DRIVER

■ VERYRUGGED BIPOLARTECHNOLOGY

■ HIGH OPERATINGJUNCTION

TEMPERATURE

■ WIDERANGE OF PACKAGES

APPLICATIONS

■ HIGH RUGGEDNESSELECTRONIC

IGNITIONS

BU931P

NPN POWER DARLINGTON

1

2

TO-3 TO-218

3

2

1

INTERNAL SCHEMATIC DIAGRAM

for TO-3
Emitter: pin 2
Base: pin1
Collector: tab

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

BU931 BU931P

V
V
V

I

I
P

T

Collector-Emitter Voltage (VBE= 0) 500 V

CES

Collector-Emitter Voltage (IB= 0) 400 V

CEO

Emitter-Base Voltage ( IC=0) 5 V

EBO

Collect or Current 15 A

I

C

Collect or Peak Current 30 A

CM

Base Current 1 A

I

B

Base Peak Curr ent 5 A

BM

Tot al Dissipa t ion at Tc=25oC175135W

tot

Sto rage T emperature -65 t o 200 -65 t o 175

stg

Max. O per ating Junction Tem perat ure 200 175

T

j

o

C

o

C

September 1999

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BU931 / BU931P

THERMAL DATA

R

thj-case

Thermal Resistance Junction-case Max 1 1.1

TO-3 TO-218

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

CES

I

CEO

I

EBO

V

CEO(sus)

V

CE(sat)

V

BE(sat)

h

FE

V

t

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Collector Cut -off
Current (V

BE

=0)

Collector Cut -off
Current (I

B

=0)

Emit ter Cut-off Current

=0)

(I

C

∗ Collector-Emitter

Sust aining Volt ag e

=0)

(I

B

∗ Collector-Emitter

Saturation Voltage

∗ Base-Emitt er

Saturation Voltage

=500V

V

CE

V

=500V Tj= 125oC

CE

V

=450V

CE

=450V Tj= 125oC

V

CE

V

=5V 20 mA

EB

I

= 100 mA L = 10 mH

C

V

= 400 V

Clamp

400 V

(See Fig. 4)
IC=7A IB=70mA

=8A IB=100mA

I

C

=10A IB= 250 m A

I

C

IC=7A IB=70mA
I

=8A IB=100mA

C

=10A IB= 250 m A

I

C

∗ DC Current Gain IC=5A VCE= 1 0 V 300

Diode F or war d V oltage IF=10A 2.5 V

F

Func tional Tes t
(see f ig. 1)

INDUCTIV E LO AD
St orage Time

s

t

Fall Time

f

(see f ig. 3)

V

=24V V

CC

clamp

L=7mH
VCC=12V V

clamp

L=7mH

=7A IB=70mA

I

C

=0 RBE=47Ω

V

BE

= 400 V

= 300 V

8A

15

0.5

100

0.5

100

0.5

1.6

1.8

1.8

2.2

2.4

2.5

µA

mA

µA

mA

V
V
V

V
V
V

µs
µs

Safe OperatingArea DC Current Gain

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BU931 / BU931P

CollectorEmitter SaturationVoltage

CollectorEmitter SaturationVoltage

Collector EmitterSaturation Voltage

BaseEmitter SaturationVoltage

Base Emitter SaturationVoltage

SwitchingTime InductiveLoad

3/7

BU931 / BU931P

FIGURE1: Functional Test Circuit FIGURE2: Functional Test Waveforms

FIGURE3: SwitchingTime Test Circuit FIGURE 4: SustainingVoltage Test Circuit

4/7

TO-3 MECHANICALDATA

BU931 / BU931P

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 11.00 13.10 0.433 0.516

B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065

D 8.32 8.92 0.327 0.351

E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437

N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023

R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547

V 30.00 30.30 1.187 1.193

P

G

U

V

N

O

R

B

DA

C

E

P003F

5/7

BU931 / BU931P

TO-218 (SOT-93) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437

H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220

R – 12.2 – 0.480

Ø 4 4.1 0.157 0.161

mm inch

E

A

C

L5

D

L6

L3

L2

H

G

¯

F

R

123

P025A

6/7

BU931 / BU931P

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subject tochange without notice.This publication supersedes andreplaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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