Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 - 1500 V
Collector-emitter voltage - 800 V
(open base)
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - 5.0 V
Collector saturation current 8 - A
Storage time I
= 8.0 A; I
Csat
= 1.1 A 3.0 4.0 µs
B(end)
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 8 A
Base current peak value - 12 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-9A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
September 1997 1 Rev 1.100
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
R
EB
BV
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
EBO
Collector cut-off current
Emitter cut-off current VEB = 6.0 V; IC = 0 A 72 110 218 mA
Base-emitter resistance VEB = 6.0 V - 55 - Ω
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Collector emitter-sustaining voltage IB = 0A;IC = 100mA; 800 - - V
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 5.0 V
Base-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 1.1 V
DC current gain IC = 1 A; VCE = 5 V - 11 -
Diode forward voltage IF = 8 A 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
V
fr
t
fr
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF
Switching times (32 kHz line I
deflection circuit) I
Turn-off storage time 3.0 4.0 µs
Turn-off fall time 0.2 0.35 µs
Anti-parallel diode forward recovery IF = 8 A; dIF/dt = 50 A/µs16V
voltage
Anti-parallel diode forward recovery VF = 5 V 410 ns
time
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L= 25 mH
IC = 8 A; VCE = 5 V 5 7 9.5
= 8.0 A; LC = 260 µH; Cfb = 13 nF;
Csat
= 1.1 A; LB = 2.5 µH; -VBB = 4 V;
B(end)
(-dIB/dt = 1.6 A/µs)
VCE
I
TRANSISTOR
IC
IB
DIODE
13us10us
32us
Csat
IBend
t
t
t
IC
IB
ts
IBend
ICsat
90 %
10 %
tf
t
t
- IBM
Fig.1. Switching times waveforms. Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
I
F
I
F
10%
t
fr
V
F
time
5 V
V
F
time
Fig.3. Definition of anti-parallel diode Vfr and t
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB
D.U.T.
Cfb
Rbe
Fig.4. Switching times test circuit
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
V
fr
fr
0.6
0.5
0.4
0.1 1 10
Fig.6. Typical base-emitter saturation voltage.
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1 10
Tj = 25 C
Tj = 125 C
IC / A
VBEsat = f (IC); parameter IC/I
VCESAT / V
IC/IB =
5
4
3
Tj = 25 C
Tj = 125 C
IC / A
BU2525A
IC/IB=
3
4
5
B
BU2525A
1001
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/I
B
hFE BU2525D
100
Tj = 25 C
5 V
10
1V
1
0.1 1 10 100
Tj = 125 C
IC / A
Fig.5. Typical DC current gain. hFE = f (IC)
parameter V
CE
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
0 1 2 3 4
Tj = 25 C
Tj = 125 C
IB / A
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter I
BU2525A
IC=
8 A
6 A
5 A
4 A
C
September 1997 3 Rev 1.100
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
VCESAT / V
10
1
IC = 4 A
0.1
0.1 1 10
8 A
6 A
5 A
IB / A
BU2525A
Tj = 25 C
Tj = 125 C
Fig.9. Typical collector-emitter saturation voltage.
1000
100
VCEsat = f (IB); parameter I
Eoff / uJ
IC = 8 A
7 A
C
BU2525A
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tmb / C
Fig.12. Normalised power dissipation.
PD% = 100⋅PD/P
Zth / (K/W)
10
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
D 25˚C
= f (Tmb)
t
p
P
D
BU2525A
t
p
D =
T
10
0.1 1 10
IB / A
Fig.10. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 32 kHz
ts, tf / us
12
11
10
9
8
7
6
5
4
3
2
1
0
0.1 1 10
32 kHz
IC =
8 A
7 A
IB / A
BU2525A
ts
tf
Fig.11. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
D = 0
0.001
1E-06 1E-04 1E-02 1E+00
t / s
Fig.13. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
t
T
September 1997 4 Rev 1.100
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
BU2525AIC / A
100
tp =
40 us
100 us
1 ms
10
1
ICM
ICDC
= 0.01
Ptot
0.1
0.01
1 10 100 1000
10 ms
DC
VCE / V
Fig.14. Forward bias safe operating area. Tmb = 25 ˚C
I
& ICM = f(VCE); ICM single pulse; parameter t
CDC
Second-breakdown limits independant of temperature.
;
p
September 1997 5 Rev 1.100
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
21
max
15.5
min
3.5
4.0
max
2.2 max
3.2 max
16 max
5.3
15.5
max
1
2
5.45
3
1.1
5.45
7.3
seating
0.4
5.3 max
1.8
o
plane
2.5
0.9 max
M
Fig.15. SOT429; pin 2 connected to mounting base.
3.5
max
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
September 1997 6 Rev 1.100
Page 7
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DW
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 7 Rev 1.100
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