Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520D
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT93 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
Collector saturation current 6 - A
Diode forward voltage IF = 6.0 A - 2.2 V
Fall time ICM = 6.0 A; I
= 1.0 A 0.35 0.5 µs
B(end)
PIN DESCRIPTION
tab
c
1 base
2 collector
b
3 emitter
tab collector
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Base current (DC) - 6 A
Base current peak value - 9 A
Reverse base current average over any 20 ms period - 150 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-6A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
November 1995 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520D
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
EBO
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A 100 - 300 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 7.5 V - 50 - Ω
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.3 V
DC current gain IC = 1.0 A; VCE = 5 V - - 23
Diode forward voltage IF = 6 A - - 2.2 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (16 kHz line ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF;
deflection circuit) I
Turn-off storage time 4.5 5.5 µs
Turn-off fall time 0.35 0.5 µs
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 6 A; VCE = 5 V 5 7 10
= 1.0 A; LB = 5.3 µH; -VBB = 4 V;
B(end)
(-dIB/dt = 0.8 A / µs)
ICM
IBend
t
t
t
IC
IB
ts
IBend
VCE
TRANSISTOR
IC
IB
DIODE
26us20us
64us
Fig.1. Switching times waveforms (16 kHz). Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
ICM
90 %
10 %
tf
t
t
- IBM
November 1995 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520D
+ 150 v nominal
adjust for ICM
Lc
IBend
-VBB
LB
D.U.T.
Cfb
Rbe
Fig.3. Switching times test circuit
hFE BU2520D
100
Tj = 25 C
5 V
10
1 V
1
0.1 10
IC / A
Tj = 125 C
Fig.4. Typical DC current gain. hFE = f (IC)
parameter V
CE
VCESAT / V BU2520D
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1 10
.
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/I
VBESAT / V BU2520D
1.2
1.1
1.0
0.9
0.8
0.7
1001
0.6
0 1 2 3 4
IC/IB =
5
4
3
Tj = 25 C
Tj = 125 C
1 100
IC / A
B
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter I
C
VBESAT / V BU2520D
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.1 1 10
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
IC / A
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/I
B
Fig.8. Typical collector-emitter saturation voltage.
VCESAT / V BU2520D
10
8 A
1
IC = 4 A
0.1
0.1 1 10
6 A
5 A
IB / A
VCEsat = f (IB); parameter I
Tj = 25 C
Tj = 125 C
C
November 1995 3 Rev 1.200
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520D
Eoff / uJ
1000
IC = 6 A
100
10
0.1 1 10
5 A
IB / A
Fig.9. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; parameter frequency
ts, tf / us
12
11
10
9
8
7
6
5
4
3
2
1
0
0.1 1 10
5 A
IC =
6 A
IB / A
ts
tf
Fig.10. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
Zth / (K/W)
10
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
D = 0
0.001
1E-06 1E-04 1E-02 1E+00
t / s
P
D
Fig.12. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
100
tp =
ICM
ICDC
10
1
= 0.01
100 us
Ptot
t
p
T
BU2520AIC / A
30 us
D =
t
p
T
t
1 ms
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/P
Normalised Power Derating
Tmb / C
= f (Tmb)
D 25˚C
0.1
10 ms
DC
0.01
1 10 100 1000
VCE / V
Fig.13. Forward bias safe operating area. Tmb = 25 ˚C
I
& ICM = f(VCE); ICM single pulse; parameter t
CDC
Second-breakdown limits independant of temperature.
p
November 1995 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520D
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
2 max
2.2 max
dimensions within
this zone are
uncontrolled
15.2
max
14
13.6
4.25
4.15
0.5
min
123
4.6
max
2
4.4
21
max
12.7
max
13.6
min
Fig.14. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
5.5
11
1.15
0.95
0.5
M
0.4
1.6
November 1995 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2520D
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1995 6 Rev 1.200
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