Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525A
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT93 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - 5.0 V
Collector saturation current 8 - A
Fall time ICM = 8.0 A; I
= 1.1 A 0.2 0.35 µs
B(end)
PIN DESCRIPTION
tab
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 8 A
Base current peak value - 12 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
123
e
-7A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
November 1995 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
EBO
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 5.0 V
Base-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 1.3 V
DC current gain IC = 100 mA; VCE = 5 V 6 13 26
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF
Switching times (32 kHz line ICM = 8.0 A; LC = 260 µH; Cfb = 13 nF;
deflection circuit) I
Turn-off storage time 3.0 4.0 µs
Turn-off fall time 0.2 0.35 µs
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
IC = 8 A; VCE = 5 V 5 7 10
= 1.1 A; LB = 2.5 µH; -VBB = 4 V;
B(end)
(-dIB/dt = 1.6 A/µs)
30-60 Hz
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
sust. Fig.2. Oscilloscope display for V
CEO
+ 50v
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
sust.
CEO
2 Measured with half sine-wave voltage (curve tracer).
November 1995 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525A
TRANSISTOR
IC
IB
VCE
DIODE
13us10us
32us
Fig.3. Switching times waveforms.
IC
10 %
IB
ts
IBend
tf
Fig.4. Switching times definitions.
ICM
90 %
IBend
- IBM
I
CM
hFE
100
t
t
t
10
1
0.1 10
1 V
5 V
IC / A
BU2525A
Tj = 25 C
Tj = 125 C
1001
Fig.6. Typical DC current gain. hFE = f (IC)
parameter V
VBESAT / V
1.2
1.1
1
0.9
t
t
0.8
0.7
0.6
0.5
0.4
0.1 1 10
Tj = 25 C
Tj = 125 C
CE
BU2525A
IC/IB=
3
4
5
IC / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/I
B
IBend
LB
T.U.T.
-VBB
Fig.5. Switching times test circuit
+ 150 v nominal
adjust for ICM
Lc
Cfb
BY228
(BU2525A).
VCESAT / V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1 10
Tj = 25 C
Tj = 125 C
IC/IB =
5
4
3
IC / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/I
BU2525A
1001
B
November 1995 3 Rev 1.200
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525A
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
0 1 2 3 4
Tj = 25 C
Tj = 125 C
IB / A
BU2525A
IC=
8 A
6 A
5 A
4 A
Fig.9. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter I
VCESAT / V
10
1
IC = 4 A
0.1
0.1 1 10
8 A
6 A
5 A
IB / A
C
BU2525A
Tj = 25 C
Tj = 125 C
Fig.10. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter I
C
ts, tf / us
12
11
10
9
8
7
6
5
4
3
2
1
0
0.1 1 10
32 kHz
IC =
8 A
7 A
IB / A
BU2525A
ts
tf
Fig.12. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tmb / C
Fig.13. Normalised power dissipation.
PD% = 100⋅PD/P
D 25˚C
= f (Tmb)
Eoff / uJ
1000
100
10
0.1 1 10
IC = 8 A
7 A
IB / A
Fig.11. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 32 kHz
BU2525A
Zth / (K/W)
10
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
D = 0
0.001
1E-06 1E-04 1E-02 1E+00
t / s
t
p
P
D
Fig.14. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
BU2525A
T
D =
t
p
T
t
November 1995 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525A
BU2525AIC / A
100
tp =
40 us
100 us
1 ms
10
1
ICM
ICDC
= 0.01
Ptot
0.1
0.01
1 10 100 1000
10 ms
DC
VCE / V
Fig.15. Forward bias safe operating area. Tmb = 25 ˚C
I
& ICM = f(VCE); ICM single pulse; parameter t
CDC
Second-breakdown limits independant of temperature.
;
p
November 1995 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525A
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
2 max
2.2 max
dimensions within
this zone are
uncontrolled
15.2
max
14
13.6
4.25
4.15
0.5
min
123
4.6
max
2
4.4
21
max
12.7
max
13.6
min
Fig.16. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
5.5
11
1.15
0.95
0.5
M
0.4
1.6
November 1995 6 Rev 1.200
Page 7
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525A
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1995 7 Rev 1.200
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