Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT399 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 11 A
Collector current peak value - 29 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 5.5 A; IB = 1.1 A - 5.0 V
Collector saturation current f = 64 kHz 5.5 - A
Diode forward voltage IF = 5.5 A - 2.2 V
Fall time I
= 5.5 A; f = 64 kHz 0.15 0.3 µs
Csat
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 11 A
Collector current peak value - 29 A
Base current (DC) - 7 A
Base current peak value - 10 A
Reverse base current average over any 20 ms period - 175 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-7A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
September 1997 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
R
be
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 6.0 V; IC = 0 A 80 130 170 mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Base-emitter resistance VEB = 7.5 V - 46 - Ω
Collector-emitter saturation voltage IC = 5.5 A; IB = 1.1 A - - 5.0 V
Base-emitter saturation voltage IC = 5.5 A; IB = 1.1 A - 1.0 V
DC current gain IC = 1.0 A; VCE = 5 V - 12 -
IC = 5.5 A; VCE = 5 V 5 7.5 10.8
Diode forward voltage IF = 5.5 A - - 2.2 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (64 kHz line I
deflection circuit) VCC = 145 V; I
t
s
t
f
V
fr
Turn-off storage time 1.5 2 µs
Turn-off fall time 0.15 0.3 µs
Anti-parallel diode forward recovery IF = 5.5 A; dIF/dt = 50 A/µs 16.5 - V
voltage
t
fr
Anti-parallel diode forward recovery VF = 5 V 375 - ns
time
= 5.5 A; LC = 200 µH; Cfb = 4 nF;
Csat
LB = 0.4 µH; -VBB = -4 V;
B(end)
= 0.56 A;
-IBM = 3.3 A
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523DX
I
C
I
B
DIODE
6.5 us5 us
16 us
TRANSISTOR
V
CE
Fig.1. Switching times waveforms.
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
ICsat
I end
B
t
+ 150 v nominal
adjust for ICsat
t
Lc
t
IBend
-VBB
LB
D.U.T.
Cfb
Rbe
t
Fig.4. Switching times test circuit
hFE
100
VCE = 1 V
10
Ths = 25 C
Ths = 85 C
.
BU2523DF/X
t
- IBM
Fig.2. Switching times definitions.
I
F
10%
t
fr
V
F
5 V
I
F
time
V
F
time
Fig.3. Definition of anti-parallel diode Vfr and tfr.
1
0.01 0.1 1 10 100
IC / A
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 1 V
hFE
100
VCE = 5 V
10
V
fr
1
0.01 0.1 1 10 100
BU2523DF/X
Ths = 25 C
Ths = 85 C
IC / A
Fig.6. High and low DC current gain. hFE = f (IC)
VCE = 5 V
September 1997 3 Rev 1.200
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523DX
VCEsat / V BU2523DF/X
10
Ths = 25 C
Ths = 85 C
1
IC/IB = 10
0.1
0.01
0.1 1 10 100
IC/IB = 5
IC / A
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/I
VBEsat / V BU2523DF/X
1.2
1.1
1
0.9
0.8
0.7
0.6
01234
IC = 6 A
B
Ths = 25 C
Ths = 85 C
IC = 4.5 A
IB / A
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter I
C
ts/tf / us BU2523AF/DF/AX/DX
5
4
3
2
1
0
0 0.5 1 1.5 2
IB / A
Fig.10. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); IC = 5.5 A; Tj = 85˚C; f = 64 kHz
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/P
D 25˚C
= f (Tmb)
PTOT / W
100
10
1
0 0.5 1 1.5 2
Fig.9. Typical losses.
P
= f (IB); IC = 5.5 A; f = 64 kHz
TOT
BU2523AF/DF/AX/DX
Ths = 25 C
Ths = 85 C
IB / A
Zth / (K/W)
10
0.5
1
0.2
0.1
0.05
0.1
0.02
p
t
P
0.01
D = 0
0.001
1E-06 1E-04 1E-02 1E+00
D
t / s
Fig.12. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-hs
BU2525AF
D =
T
t
p
T
t
September 1997 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523DX
VCC
LC
IBend
-VBB
LB
T.U.T.
Fig.13. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 5 V;
LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH;
IC / A
30
20
CFB = 0.5 - 8 nF; I
= 0.55 - 1.1 A
B(end)
CFB
BU2523
Area where
fails occur
VCL
Ic(sat) (A)
8
7
6
5
4
3
2
1
0
0 1020304050607080
frequency (kHz)
Fig.15. I
during normal running vs. frequency of
Csat
operation for optimum performance
BU2523AF/AX
10
0
100 1000
VCE / V
Fig.14. Reverse bias safe operating area. Tj ≤ T
1500
jmax
September 1997 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523DX
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.88 g
4.5
16.0 max
0.7
10.0
3.3
5.8 max
3.0
27
max
22.5
max
18.1
min
5.45 5.45
Fig.16. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
25
25.1
25.7
5.1
2.2 max
4.5
1.1
0.4 M
2
0.95 max
3.3
September 1997 6 Rev 1.200
Page 7
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523DX
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 7 Rev 1.200
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