Page 1
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PINNING - SOT199 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
Collector saturation current f = 64 kHz 6 - A
Diode forward voltage IF = 6.0 A - 2.2 V
Fall time I
= 6.0 A; f = 64 kHz 0.12 0.25 µs
Csat
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Base current (DC) - 6 A
Base current peak value - 9 A
Reverse base current average over any 20 ms period - 150 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-6A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
September 1997 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
R
be
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A - 150 - mA
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 7.5 V - 50 - Ω
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.1 V
DC current gain IC = 1.0 A; VCE = 5 V - 13 -
IC = 6 A; VCE = 5 V 5 7 10
Diode forward voltage IF = 6 A - - 2.2 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (64 kHz line ICM = 6.0 A; LC = 170 µH; Cfb = 5.4 nF;
deflection circuit) I
= 0.7 A; LB = 0.6 µH; -VBB = 2 V;
B(end)
(-dIB/dt = 3.33 A / µs)
Turn-off storage time 1.7 2.0 µs
Turn-off fall time 0.12 0.25 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
ICsat
I end
B
t
t
t
V
I
I
CE
TRANSISTOR
C
B
DIODE
6.5 us5 us
16 us
Fig.1. Switching times waveforms (64 kHz).
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
t
VCC
LC
IBend
-VBB
LB
Rbe
T.U.T.
VCL
CFB
Fig.4. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;
LC = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH;
CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A
hFE
100
Tj = 25 C
5 V
10
1 V
Tj = 125 C
Fig.2. Switching times definitions.
IBend
-VBB
LB
D.U.T.
Fig.3. Switching times test circuit
+ 150 v nominal
adjust for ICsat
Rbe
Lc
- IBM
Cfb
t
1
0.1 10
IC / A
1001
Fig.5. Typical DC current gain. hFE = f (IC)
parameter V
VBESAT / V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.1 1 10
.
Fig.6. Typical base-emitter saturation voltage.
Tj = 25 C
Tj = 125 C
VBEsat = f (IC); parameter IC/I
CE
IC/IB=
3
4
5
IC / A
B
September 1997 3 Rev 1.200
Page 4
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
VCESAT / V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1 10
IC/IB =
5
4
3
Tj = 25 C
Tj = 125 C
1001
IC / A
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/I
VBESAT / V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
0 1 2 3 4
IB / A
B
IC=
8 A
6 A
5 A
4 A
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter I
C
Poff / W
100
IC =
6A
5A
10
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
BU2522AF
Fig.10. Typical turn-off losses. Tj = 85˚C
Poff = f (IB); parameter IC; f = 64 kHz
ts, tf / us
4
3.5
3
2.5
2
1.5
1
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
5A
IC =
6A
IB / A
BU2522AF
Fig.11. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz
VCESAT / V
10
8 A
1
6 A
5 A
IC = 4 A
0.1
0.1 1 10
IB / A
Tj = 25 C
Tj = 125 C
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter I
C
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Fig.12. Normalised power dissipation.
PD% = 100⋅PD/P
Normalised Power Derating
with heatsink compound
Ths / C
= f (Ths)
D 25˚C
September 1997 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
Zth / (K/W)
10
0.5
1
0.2
0.1
0.05
0.1
0.02
t
p
P
0.01
D = 0
0.001
1E-06 1E-04 1E-02 1E+00
D
t / s
Fig.13. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-hs
30
20
10
IC / A
BU2522AF
100
ICM
ICDC
t
p
D =
T
t
T
10
Ptot
1
0.1
= 0.01
BU2520AFIC / A
tp =
30 us
100 us
1 ms
10 ms
DC
0
0
500 1000 1500
VCE / V
Fig.14. Reverse bias safe operating area. Tj ≤ T
jmax
0.01
1 10 100 1000
VCE / V
Fig.15. Forward bias safe operating area. Ths = 25 ˚C
I
& ICM = f(VCE); ICM single pulse; parameter t
CDC
Second-breakdown limits independant of temperature.
p
Mounted with heatsink compound.
September 1997 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
21.5
max
15.7
0.7
3.5
15.3 max
7.3
3.1
3.3
6.2
5.8
5.2 max
3.2
o
45
seating
plane
3.5 max
not tinned
min
12
2.1 max
5.45
Fig.16. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
3
1.2
1.0
5.45
0.4
M
0.7 max
2.0
September 1997 6 Rev 1.200
Page 7
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2522DF
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 7 Rev 1.200
Loading...