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INCHANGE Semiconductor
oltage
isc Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 800V (Min)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of
large screen color TV receivers
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL
V
CES
Collector- Emitter Voltage(VBE= 0)
PARAMETER VALUE UNIT
=25
a
℃)
1500 V
BU2520AF
V
CEO
V
EBO
IC Collector Current- Continuous 10 A
ICM Collector Current-Peak 25 A
IB Base Current- Continuous 6 A
IBM Base Current-Peak 9 A
PC
TJ Junction Temperature 150 ℃
T
stg
Collector-Emitter V
Emitter-Base Voltage 7.5 V
Collector Power Dissipation
@ TC=25℃
Storage Temperature Range -65~150
800 V
45 W
℃
SYMBOL
R
th j-c
Thermal Resistance,Junction to Case 2.8 ℃/W
isc website：www.iscsemi.cn
PARAMETER MAX UNIT
1
Page 2
INCHANGE Semiconductor
isc Product Specification
isc
Silicon NPN Power Transistor
BU2520AF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
V
V
V
Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 800
CEO(SUS)
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V
(BR)EBO
Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 5.0 V
CE
(sat)
Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.1 V
BE
(sat)
I
Collector Cutoff Current
CES
I
Emitter Cutoff Current VEB= 7.5V ; IC= 0 1.0 mA
EBO
PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
= 1500V ; VBE= 0
CE
= 1500V ; VBE= 0; TC=125℃
V
CE
1.0
2.0
mA
h
DC Current Gain IC= 0.1A ; VCE= 5V 13
FE-1
h
DC Current Gain IC= 6A ; VCE= 5V 5 9.5
FE-2
COB Output Capacitance
Switching times
t
stg
tf
Storage Time
Fall Time 0.5 μs
IE= 0; VCB= 10V; f
IC= 6A , I
-V
B(
= 4V; (-dIB/dt= 0.8A/μs)
BB
test
= 1.0A; LB= 5.3μH
)
end
= 1MHz
115 pF
5.5 μs
isc website：www.iscsemi.cn
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